CCS1 Search Results

3F1 SMD Transistor

Abstract: 3fx transistor transistor 3Fn 24 smd transistor lg smd transistor LF smd JH transistor celeritek CCS1933 F7104 smd transistor fh
Contextual Info: CCS1933 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 2 Watt Amplifier Chip Set Features ❏ High Gain ≈ 35 dB ❏ +33 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2162 Applications

transistor l1w smd

Abstract: ng52 mmic transistor E5 SMD Transistor Y04 SMD K62 smd mmic transistor E5 WG1 smd O2W transistor G7FH transistor g7x
Contextual Info: CCS1930 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 32 dB ❏ +30 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2062 Applications

SMD TRANSISTOR ANALOG

Abstract: SMD TRANSISTOR LIST CCS1930 CFK2062 CFK2062-P3 CMM1301 CMM1301-AM CSW2102 PB-CCS1930 SOIC-16
Contextual Info: CELERÊTEK g CCS1930 1.85 to 2.0 GHz 1 Watt Amplifier Chip Set P roduct Inform ation M arch 1996 Oof 2 Features □ High Gain = 32 dB □ +30 dBm Output Power @ 5 Volts □ >45% Efficiency Achievable □ Small Size Functional Block Diagram 1 CMM1301 CFK2062 I

Contextual Info: CCS15S40 Schottky Barrier Diode Silicon Epitaxial CCS15S40 1. Applications • High-Speed Switching 2. Features 1 Small package (2) Low forward voltage: VF(2) = 0.47 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode CST2C Start of commercial production

Contextual Info: 07/01/2014 Products building a smarter, unified business foundation SOLUTIONS WORLDWIDE PRODUCTS AND SERVICES SUPPORT [CHANGE] ENGLISH REGISTER / LOG IN FOLLOW US ABOUT US Back to Result CCS12-S8-M Add to BOM | Add to Favorites Fixed Diameter Cable Clamp Product Details Related Documents

m1301

Abstract: CELERITEK SWITCH 6 PIN SMD 3236 D0805 transistor d 1933 smd transistor pin out data celeritek amplifier
Contextual Info: e CELERITEK CCS1933 Product Information March 1 9 9 6 iof 2 1.85 to 2.0 GHz 2 Watt Amplifier Chip Set Features □ High Gain - 35 dB □ +33 dBm Output Power @ 5 Volts □ >45% Efficiency Achievable □ Small Size Functional Block Diagram CFK2162 I Applications

CCS15S30

Contextual Info: CCS15S30 Schottky Barrier Diode Silicon Epitaxial CCS15S30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode CST2C 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

smd transistor pin out data

Abstract: c20 SMD Matsuo TANTALUM SMD CAPACITOR transistor smd 1933 SMD TRANSISTOR LIST smd-transistor 132 CELERITEK SWITCH CCS1933 CFK2162-P3 CMM1301-AM
Contextual Info: g ^C E L E R IT E K Product In fo rm atio n M arch 1996 1 of 2 CCS1933 1.85 to 2.0 GHz 2 Watt Amplifier Chip Set Features □ High Gain « 35 dB □ +33 dBm Output Power @ 5 Volts □ >45% Efficiency Achievable □ Small Size Functional Block Diagram 1 CMM1301

MCCS142233

Abstract: MCCS142233FN R220
Contextual Info: 2 o 199! Order this data sheet by M CCS142233/D- MOTOROLA SEMICONDUCTOR TECHNICAL DATA 9-Bit S w itchable SCSI Passive Bus Term inator 220 Q and 330 Q The CCS142233 is a precision 9-bit switchable SCSI bus term inator with a Local-VQQ (LV qq) low voltage sense circuit to latch the

Contextual Info: CCS15S30 Schottky Barrier Diode Silicon Epitaxial CCS15S30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode CST2C Start of commercial production 1 2013-07

Panduit

Abstract: CCS12-S8 CCS19-S8 CCS25-S10 CCS25-S8 CCS31-S8 CCS44-S8 GB0239DV CCS38-S8
Contextual Info: THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. •PANDUIT PART NUMBER CCS12-S8 CCS19-S8 CCS25-S8 CCS25-S10 CCS31-S8 CCS38-S8 SIZE NOTED HERE. CCS44-S8 CCS50-S8 "A" "B" REF. in/ mm in/(mm)

GB0239DV

Contextual Info: T H IS COPY IS PROVIDED ON A R E S TR IC TED B A S IS AND IS NOT TO BE USED •PANDUIT PART NUMBER CCS12-SB CCS19-SB CCS25-SB 'D' CCS25-S10 CCS31-SB CCS3B-SB S IZ E NOTED HERE. CCS44-SB CCS50-SB IN ANY WAY DETRIM ENTAL TO THE INTERESTS OF P A N D U IT CORP.

S5 100 B112 MT RELAY

Abstract: CK 66 UL 94V-0 LCD sh 0357 94v-0 c225t F8212 panduit standoff RF based remote control robot circuit diagram of incubator D1148 burndy Y35 crimping tool manual
Contextual Info: ELECTRICAL SOLUTIONS A. System Overview Click on the logo above to go to www.panduit.com up to date product information find a local distributor technical information Section Index B1. Cable Ties A. System Overview B2. Cable Accessories B. Bundle B3. Stainless

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

data sw 3205

Contextual Info: Ordering number : EN JK4711 CMOS LSI LC338128P, M, PL, ML-7Q/8o7fÖ 1 MEG 131072 words x 8 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC338128 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized

10ST10

Abstract: lq55
Contextual Info: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type

Contextual Info: NOV 3 t Î99I ! Preliminary Advanced Micro Devices Am2075 ISDN Digital Exchange Controller IDEC DISTINCTIVE CHARACTERISTICS • Four independent HDLC channels ■ 64-byte FIFO storage per channel and Programmable time slots and channel data rates (up to 4 Mb/s)

T7531

Contextual Info: Data Sheet October 1999 L7585F Full-Feature, Low-Power SLIC and Switch Features • Low active power ■ Quiet tip/ring polarity reversal ■ Distortion-free on-hook transmission ■ 35 V to 60 V power supply operation ■ 14 operating states: — Forward battery active

cdfp1

Abstract: 29C040 qml-38535 GDIP1-T32 CDFP1-F32
Contextual Info: REVISIONS LTR DATE DESCRIPTION APPROVED YR-MO-DA REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N.'ft. STAND ARD IZED M IL IT A R Y DRAWING THIS M A U I MB IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A

7214

Contextual Info: 7214 Beam Power Tube CERAMIC METAL SEALS COAXIAL-ELECTRODE STRUCTURE UHITIZED-ELECTRODE DESIGN INTEGRAL RADIATOR FORCED-AIR COOLED 180 KW PEAK-PULSE POWER M ATRIX-TYPE, OXIDE-COATED, UNIPOTENTIAL CATHODE For P u ls e d RF A m p lif ie r S e r v i c e w ith F u l l

Intel Microprocessor 240440

Abstract: 82360SL intel 82360SL
Contextual Info: in te i November 1992 Intel486 SL Microprocessor SuperSet Data Book Order Number: 241325-001 2-1 Intel486™ SL Microprocessor SuperSet CONTENTS CONTENTS page page 1.0 INTRODUCTION . 2-6 3.0 82360SL I/O SPECIFICATIONS . . . . 2-79

LC33832M

Abstract: LC33832P LC33832S
Contextual Info: IOrdering number : EN4430B| CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430B 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words x 8 bits. By using memory

IC 2864 eeprom

Abstract: 2764 EEPROM DS1225-200 EEPROM 2864 2764 eprom PINOUT ram DS1225 ds1225 DS1225-100 2864 eeprom EEPROM 2864 CMOS
Contextual Info: DALLAS SEMICONDUCTOR CORP 3=iE D at.14130 0003364 4 Hi DAL DS1225AB/AD ' 'C ^ i b 3 7 DS1225AB/AD D A LLA S 64K Nonvolatile SRAM SEM ICONDUCTOR FEATURES A PIN DESCRIPTION • Data retention in the absence of Vco • Data Is automatically protected during power

STM CL-80

Abstract: acp ca14 AD10 AD14 TXC-05551
Contextual Info: SARA-2 ATM Cell Processing 1C Device TXC-05551 DATA SHEET PRODUCT PREVIEW DESCRIPTION Test Access Port SARA-2 is a single-chip solution using feature/ application-specific microcode that performs complete segmentation and reassembly SAR for implementing