1S41 Search Results

1S411

Abstract: 1S420 1S425 1S423 1S421 1S427 1S410 1S413 1S415 1S417
Contextual Info: Discrete Semiconductors <¿^3 T e x a s I n s t r u m e n t s Metal Case Stud-mounted Rectifiers Device No. Case 1S410 1S411 1S413 1 S4 1 5 1 S4 1 7 1S419 S010 S010 S010 S010 S010 S010 1S420 1S421 1S423 1S425 1 S4 2 7 1S429 1S429/R S010 S010 S010 S010 S010

1c5gt tube

Abstract: 1S41 Scans-0017336 IC5GT
Contextual Info: I C5 G T / G TUNG-SOL PENTODE POWER AMPLIFIER COATED FILAM EN T 1 .4 VOLTS 0 .1 0 AMPERE DC GLASS BULB G-6X BOTTOM INTERM EDIATE 7 VIEW PIN OCTAL BASE 1S A LOW VOLTAGE, LOW CURRENT DRAI N , BATTERY TYPE THE TUNG-SOL 1C 5G T /G PENTODE POWER A M P L IF IE R .

6a8 tube

Abstract: 6A8gt 6a8g tube 6a8g Scans-001755 tube 6a8g 1041 ac to dc converter 6A86 6A8-G
Contextual Info: 6A8.6A8G, 6A8G T TUNG-SOL -\ r PENTAGRID CONVERTER MAX. T-9 UN I PO T EN T IA L CATHODE c2 *i*" 3re M AX. HEATER fa 6 .3 VOLTS 1 i p 0 - 3 AMPERE 2 | UAX WAX. -•i|- AC OR DC G LA SS B U LB & P IN O C T A L B A S E W ITH M ETA L S M E LL

Contextual Info: ZENER DIODES, LOW CURRENT, LOW NOISE inal Maximum Max mum Reverse Maximum Maximum 400mW Nom Zanar 2anar Zener Leakage Currant Noise Max Temperature Voltage Test impedance *11*- 43 b Density Zener Coefficient Package JEDEC Current Zj f.r Me« )„ Current i i i i m i i i i i i Quantities

1S141

Contextual Info: MX*COM, INC. MiXed Signal ICs DATA BULLETIN M YRfiQ IviAU 0 9 LowVoltage, High Speed GMSKModem4K to 4 bps ok b p s Document #2048-0103.008 July 1995 FEATURES APPLICATIONS • MX« COM MiXed Signal CMOS • PORTABLE WIRELESS DATA - CELLULAR DIGITAL PACKET DATA CDPD

1841A

Abstract: 1841A-30 CYM1841 CYM1841A CYM1851 1841AP7 5 pin A13E
Contextual Info: CYM1841 CYM1841A CYPRESS 256K x 32 Static RAM Module Features Functional D escription • High-density 8-megabit SRAM module • 32-bit standard footprint supports densities from 16K x 32 through 1M x 32 • High-speed CMOS SRAMs — Access time o f 12 ns

Contextual Info: HM514190A/AL, 1S4190A/AL Series Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514190A/AL are CMOS dynamic RAM or­ ganized as 262,144-word x 18-bit. HM514190A/AL have re­ alized higher density, higher performance and various func­

beam Tube 6L50

Abstract: EF860 em80 tube EF80 pentode tube em84 6dj8 tube el500 ECL86 1T4T ecc189
Contextual Info: OW'C e \e c v \w\»e S R E C E I V IN G P IC T U R E T U B ES T U B ES C A T H O D E - R A Y R E C T IF IE R T U B E S T U B E S T R A N S M IT T IN G M O D U L A T I N G IM P U L S E T U B E S T U B ES TU B ES K L Y S T R O N S M A G N E T R O N S T R A V E L L I N G

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: HITACHI/ LOGIC/ARRAYS/M b?E D • 44^503 002447S HM514190A/AL, 1S4190A/AL Series 5flb ■ HITS Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory ■ DESCRIPTION ■ FEATURES The Hitachi HM514190A/AL are CMOS dynamic RAM or­ ganized a s 262,144-word x 18-bit. HM514190A/AL have re­

TC9214AP

Abstract: TC9214 1s311
Contextual Info: T O S H IB A C M O S D IG ITAL IN TEG RA T ED CIRCUIT INTEGRATED TOSHIBA CIRCUIT I t L .M N IL .A L TC9214AP, TC9214AF TC9215AP, TC9215AF U A IA ÌIL IL .U N I V I U N U L I I MIL. HIGH VOLTAGE ANALOG SWITCH TC9214AP/AF, TC9215AP/AF are Analog Switch for high

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

tube 1R5

Abstract: 1r5 tube SB-316 SBOA-318 APS-310
Contextual Info: REV UNLESS OTHERWISE NOTED AK DIMENSIONS ARE IN INCHES TITLE: DWG NO: TOLERANCES ARE: ONE PLACE DECIMALS ± THREE PLAC E DECIMALS ± ANGLES TWO PLACE DECIMALS ± FOUR PLACE DECIMALS ± ± AP ASSEMBLY APX- XXX-X-X SHEET 1 OF 2 NOTES: APX-XXX - X - X I B O D Y S P E C IF C A T IO N

Contextual Info: Low Cost Triple CRT Driver CORPORATION Preliminary Data Sheet CVA2403A DESCRIPTION FEATURES • • • Rise/Fall Time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0ns Swing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65VP-P

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

germanium

Abstract: BUY23A Germanium drift transistor epitaxial mesa gardners transformers Germanium itt BLY63
Contextual Info: Inverters Application Report B83 Texas Instruments Limited • Manton Lane • Bedford • Phone 0234 67466 • Telex 82178 CONTENTS Page 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. IN T R O D U C T IO N POWER SOURCES Lead Acid Batteries Final Voltage, Capacity

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

diodes IN4001

Abstract: S06 rectifier in648 1S940 rectifier in4004 1S136 1S115 Diodes In4007 1s020 IN4007
Contextual Info: Diodes and Rectifiers Type C a se No. A m p s. (V o lts) (A m p s.) (n A ) Drawing Average Rectified Forward Current C rest Single Max. I R S P E C IA L No. A m bient Tem perature W orking Cycle at P .I.V . FEA TU RES Voltage Surge at 25°C 25°C 50°C 100°C

1S4009

Abstract: 1S4007 1S4007A 1S4016A 1S401 1S4010 1S4180 1S4013A 1S4033A 1S4150A
Contextual Info: Diodes and Rectifiers Type No. Case Drawing No. W Max. Powet D issipation (V olts) Norn. Voltage ±5% (m A ) T e st C urrent (« ) Max. Slope Impedance at test current + ( % f C) Typ. Temp. Coefficient V oltage 1S4006A S016 CC 1-5 6-8 50 1-5 Regulators

1S516

Abstract: 18515 1D210 1s2100 1D820 1S214 1S535 1S85 1D215 1s48
Contextual Info: • Dnooaai i mia M l • " M IL • ELECTRO NICS - 1■_i. MOD. ' ■ rr ■! • • ' T ¡'ft ONE WATT OF ISOLATED OUTPUT POWER => SINGLE OR DUAL OUTPUTS ° 10 TURN POT. ADJUSTABLE OUTPUT • SEALED METAL CLOSURE • PRINTED CIRCUIT MOUNTING » LESS THAN ONE CUBIC INCH

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

HM514190AJ7

Contextual Info: HM514190A/AL, 1S4190A/AL Series Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514190A/AL are CMOS dynamic RAM or­ ganized as 262,144-word x 18-bit. HM514190A/AL have re­ alized higher density, higher performance and various func­