1S165 Search Results

Contextual Info: 1S1658 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.32p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage20 Q Factor Min.100Â f(co) Min. (Hz) Cut-off freq.5.0G P(D) Max. (W) Semiconductor MaterialSilicon Package StyleDO-7

1ss97

Abstract: 1ss99 1ss101 1ss98 1SS106 1SS14 1ss16 1S1860 1SS237 1S1659
Contextual Info: - * m % tt 1S1659 1SI 8 58 1SI 8 60 1S1992 1S1993 BU BU BM 1S1994 1S1995 1S2198 1S2203 1S2210 a m a m 1S2211 ISSI 2 1SS13 1SS14 1SS15 BG . 1 SS 16 1SS23 1SS43 1SS69 1SS70 s s s s s 1SS78 1SS86 1SS87 1SS88 1SS90 s m B * B ±L Q 3 un un , a m B m a m BM s m

1S1657

Abstract: 1S219 1S22 1S777
Contextual Info: - ft » « tt m i 1S22 1S2S 1524 1525 1S219 1S777 IS 14 6S 1S I 656 1S1657 * 2 E S « ^ Vrrm Vr IFM T« f t V (V ) (A) CC) 500 400 400 300 200 380 380 300 200 100 250 200 200 150 200 200 200 150 200 (A) 0. 0. 0. 0. 0. 10 10 10 10 10 fë /£ Io ,If * re )

1SS97

Abstract: 1ss99 1SS101 7A SF SC 30 1s2198 1SS106 1SS14 1SS98 1S2211 7A SF
Contextual Info: - * ÌR'Jfé t rr ns max V r (V) typ 1 0. 8 Ct (f F) m % tt 1S1659 1SI 8 58 1 SI 8 60 1S1992 1S1993 BU BU BM 1S1994 1S1995 1S2198 1S2203 1S2210 am am 1S2211 ISSI 2 1SS13 1SS14 1SS15 BG. 1 SS 16 1SS23 1SS43 1SS69 1SS70 1SS78 1SS86 1SS87 1SS88 1SS90 1SS97 1 S S 9 7 (1)

1ss97

Abstract: 1ss99 1SS69 1SS43 1SS101 1SS98 1SS16 1S2210 1SS106 1S2211
Contextual Info: - * ÌR'Jfé Ct f F m % tt 1S1659 1SI 8 58 1 SI 8 60 1S1992 1S1993 1S1994 1S1995 1S2198 1S2203 1S2210 BU BU BM 1S2211 ISSI 2 1SS13 1SS14 1SS15 1 SS 16 1SS23 1SS43 1SS69 1SS70 1SS78 1SS86 1SS87 1SS88 1SS90 BG. 1SS97 1S S97(1) 1SS97(2) 1SS98 1SS99 1SS101 1SS106

1SS99

Abstract: DAP 7a 1ss97 1ss98 1SS101 1SS106 1SS14 1ss43 1SS87 7A SF
Contextual Info: - * m % tt 1S1659 1SI 8 58 1SI 8 60 1S1992 1S1993 BU BU BM 1S1994 1S1995 1S2198 1S2203 1S2210 a m a m 1S2211 ISSI 2 1SS13 1SS14 1SS15 BG . 1 SS 16 1SS23 1SS43 1SS69 1SS70 s s s s s 1SS78 1SS86 1SS87 1SS88 1SS90 s m B * B ±L Q 3 un un, a m B m a m BM s m m

1SS99

Abstract: 1ss97 1SS14 1S1995 1SS972 1SS13 1ss16 1SS237 1SS106 1S2211
Contextual Info: - * m % tt 1S1659 1SI 8 58 1 SI 8 60 1S1992 1S1993 1S1994 1S1995 1S2198 1S2203 1S2210 BU BU BM 1S2211 ISSI 2 1SS13 1SS14 1SS15 1 SS 16 1SS23 1SS43 1SS69 1SS70 1SS78 1SS86 1SS87 1SS88 1SS90 BG. 1SS97 1S S97 1 1SS97(2) 1SS98 1SS99 1SS101 1SS106 1SS108 ISSI 24

1S1657

Abstract: 1S165 1S219 1S22 1S777
Contextual Info: - ft » « tt m i 1S22 1S2S 1524 1525 1S219 1S777 IS 14 6S 1S I 656 1S1657 * 2 E S « ^ Vrrm Vr IFM T« f t V (V ) (A) CC) 500 400 400 300 200 380 380 300 200 100 250 200 200 150 200 200 200 150 200 (A) 0. 0. 0. 0. 0. 10 10 10 10 10 fë /£ Io ,If * re )

1SS97

Abstract: 1SS99 1SS101 iss99 1ss98 1SS90 1s2198 1SS69 1SS106 1SS14
Contextual Info: - * ÌR'Jfé Ct f F m % tt 1S1659 1SI 8 58 1 SI 8 60 1S1992 1S1993 1S1994 1S1995 1S2198 1S2203 1S2210 BU BU BM 1S2211 ISSI 2 1SS13 1SS14 1SS15 1 SS 16 1SS23 1SS43 1SS69 1SS70 1SS78 1SS86 1SS87 1SS88 1SS90 BG. 1SS97 1S S97(1) 1SS97(2) 1SS98 1SS99 1SS101 1SS106

1S1657

Abstract: 1S219 1S22 1S777 EL125
Contextual Info: - ft » « tt m i 1S22 1S2S 1524 1525 1S219 1S777 IS 14 6S 1S I 656 1S1657 * 2 E S « ^ Vrrm Vr IFM T« f t V (V ) (A) CC) 500 400 400 300 200 380 380 300 200 100 250 200 200 150 200 200 200 150 200 (A) 0. 0. 0. 0. 0. 10 10 10 10 10 fë /£ Io ,If * re)

Contextual Info: 1S1653 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current12 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)25’

1S2208

Abstract: 1S2086 1S2139-C LS2208 1S1617 1S1618 1S1619 1S1650 1S1765 1S1922
Contextual Info: - & 1S1617 £ tt « H f 1S1618 1S1619 bu P * 5Ê Vr m fe Ct Vl /Ct(V2) (mW) (V) (V) Mod 100 35 25 Mod 100 35 25 Qmin Ct, Cj*(pF> min typ 65 1. 5 65 1. 5 60 70 1. 9 70 1. 9 V r (V) f(MHz) (u A) V r (V) 15 150 1 1 25 Q=300TYP Ö 7A 100 2.1 15 150 1 1 25 Q=300TYP

1ss97

Abstract: 1SS98 1ss99 1SS43 1SS69 1S2211 1S2198 1SS90 1SS101 1SS237
Contextual Info: - * m % tt £ Ct f F Vrrm Vr (V) (V) (mA) I fm I o , I f * I fsm (mA) (A) p Ipmin ÌR'Jfé t rr(n s ) * I Rtnax Vf (V) (//A) Vr <V) typ max Vr (V) typ max 6 50 25 30 50 0. 6 1 0. 5 1 1 0.1 5 0.2 0.2 0. 2 4 10 1 10 10 1 0. 8 1 1 10 10 0. 5 4 5 (mW) (mA)

SN74ALS123

Abstract: SN7401 74LS424 54175 SN74298 SN74265 SN74LS630 SN74LS69 National Semiconductor Linear Data Book Transistor AF 138
Contextual Info: INDEX • FUNCTIONAL SELECTION GUIDE • NUMERICAL FUNCTION INTERCHANGEABILITY GUIDE GENERAL INFORMATION AND EXPLANATION OF NEW LOGIC SYMBOLS ORDERING INSTRUCTIONS AND MECHANICAL DATA 54/74 SERIES OF COMPATIBLE TTL CIRCUITS • PIN OUT DIAGRAMS 54/74 FAMILY SSI CIRCUITS

GD312A

Contextual Info: HM51W16165A Series HM51W18165A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-372B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi H M 51W 16165A Series, H M 51W 18165A Series are CMOS dynamic RAM s organized as 1,048,576-w ordx 16-bit.

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

3182N

Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
Contextual Info: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6

1S2208

Abstract: 1S2139B LS2208 1S1618 1S1619 1S1617 1S1650 1S1765 1S1922 1S1923
Contextual Info: - & 1S1617 £ tt « H f 1S1618 bu P * 5Ê Vrm fe Ct Vl /Ct(V2) Qmin Ct, Cj*(pF> I p max (mW) (V) (V) V r (V) f(MHz) ( u A) V r (V) Mo d 100 35 25 65 1. 5 70 1. 9 100 2. 1 15 150 1 1 25 Q=300TYP Ö 7A Mo d 100 35 25 65 1. 5 70 1. 9 100 2.1 15 150 1 1 25 Q=300TYP

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

1S2208

Abstract: LS161 LS2208 1S1619 1S1650 1S2139-B 1S2139-C LS1650 1S1617 1S1618
Contextual Info: - & 1S1617 £ H f 1S1618 * Ct Vl /Ct(V2) 5Ê f e M5Ë tt « P n Qmin Vrm Vr Ct, Cj*(pF> (mW) (V) (V) Mo d 100 35 25 65 1. 5 70 1. 9 100 2. 1 15 Mo d 100 35 25 65 1. 5 70 1. 9 100 2.1 15 min max typ V r (¥) m i n typ max VI (V) V2 (V) I p max 150 1 1 25 Q=300TYP