1RFP35 Search Results

C528 transistors

Abstract: C528 DIODE
Contextual Info: INTERNATIONAL RECTIFIER 11E D | 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353

1rfp240

Abstract: 1RFP340 1RFP360 IRFP310 IRFP232 1rfp254 IRFP240 IRFP141 IRFP321 IRFP151
Contextual Info: - M tt % f ft ± ï Vd s or i Vd g k V £ £ Vg s (V ) fë 1 (T a= 2 5 °C ) Id Pd * /CH * /CH (A ) (W) Ig ss (n A ) Vg s I d ss Vg s (V ) th ) m in max (V ) (V ) ma) (V ) (n A ) fè F D s (o n ) Vd s = Vg s Id Vd s ( ft % g fs Io (o n ) C is s Coss C rss

1rfp360

Abstract: IRFP143 1rfp254 IRFP240 irfa1z0 IRFP230 IRFP141 IRFP151 IRFP153 IRFP241
Contextual Info: - M tt % f ft ± ï Vd s or i Vd g k V £ £ Vg s (V) fë 1 (Ta=25°C) Id Pd * /CH * /CH (A) (W) Ig ss (nA) V g s th) Id ss Vg s (V) min max (V) (V) a ) (V) (nA) fè FD s ( o n ) Vd s = Vg s Id Vd s (m ft % g fs Io(on) Ciss Coss Crss * B m % Vg s =0 (max)

IRF351

Abstract: 2N6767 2N6768 IRFC350
Contextual Info: * 46 86 22 6 I X V S C O RP ^ MbflbEab DDGOBIG 1 | ~ 7 W ? W j □IXYS TECHNICAL DATA SHEET DATA SHEET NO. 1 0 0 3 A August 1988 IRFC350 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

Contextual Info: • 43D5H71 D0S42B0 llfl ■ J 2 H A R R IS HAS /RFP35 0 /3 5 1 /3 5 2 /3 5 3 IRFP350R/351R/352R/353R N-Channel Power MOSFETs Avalanche Energy Rated* August 1993 Package Features TO-247 TOP VIEW • 14A and 16A, 3 5 0 V - 4 0 0V • rp s o n = 0 .3 ÎÎ and 0 .4 ÎÎ

Contextual Info: * 4686226 I J3 X V S CORP □IXYS TECHNICAL DATA SHEET ] e | M b fltiE a b GDGOBIG 1 J~ 7W f W j DATA SHEET NO. 1 0 0 3 A August 19S8 IRFC350 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

1RFP360

Abstract: TO247AC 1rfp254 1RFP240 1RFP340 TO-247AC IRFP240 IRFP352 IRFP141 IRFP143
Contextual Info: - M tt % f ft ± ï Vd s or i Vd g k V £ IRFP140 IR N IRFP141 IR N £ Vg s (V) fë 1 (Ta=25°C ) Id Pd * /C H * /C H (A) (W) Ig ss (nA) Vg s t h ) Id ss Vg s (V) m in max (V ) (V) ma ) (V) (nA) fè F Ds(on) Vd s = Vg s Id Vd s ( ft % g fs Io(on) C iss Coss

diode 17a 400v

Contextual Info: IRFP350A A d van ced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 4 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VOS =400V

1rfp350

Abstract: 1RFP350R irfp350r FP350 1rfp
Contextual Info: 23 H A F R R IS IRFP350/351Z352/353 IRFP350R/351R/352R/353R N-Channel Power MOSFETs Avalanche Energy Rated* August 1993 Package Features • T O -2 4 7 14A and 16A, 350V - 400V TOP VIEW • rDS on = 0 -3 0 and 0 .4 fl • Single Pulse Avalanche Energy Rated*