1RFD Search Results

IRFD210

Abstract: diode 3a05 IRFD213
Contextual Info: IRFD210, IRFD213 « I S ilic o n ix J-W in c o rp o ra te d N-Channel Enhancement Mode Transistors "'Z°i-OS 4-PIN DIP Similar to TO-250 TOP VIEW PRODUCT SUMMARY PART NUMBER V(BR|DSS fDS(ON) (n> Id (A) 1RFD210 200 1.5 0.60 IRFD213 150 2.4 0.45 1 Œ s 2 CC

F111

Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
Contextual Info: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR

k 3525 MOSFET

Abstract: IRFD1ZO irfd1z3
Contextual Info: HE 0 I MâSS4SH 0000300 b | Data Sheet No. PD-9.380G T-35-25 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TO R HEXFET TRANSISTORS IRFD1 ZO IM-CHANNEL HEXDIP IRFD1Z3 1-WÄTT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PAGKAGE 100 Volt, 2.4 Ohm, 1-Watt HEXDIP

F111

Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
Contextual Info: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss

Power MOSFET in a HEXDIP package

Abstract: 1RFD9110 Amp. mosfet 1000 watt AN-953 IRFD9110
Contextual Info: APPLICATION NOTE 953 More Power from HEXDIPs f H E X D IP a n d H E XFET are tra d e m a rk s lo r In te rn a tio n a l R e c tifie r P ow er M O S F E T s by STEVE B R O W N and G A IL XEN A K IS International Rectifier’s H E X D I P power M O S F E T , a 4-pin dual in-line

Contextual Info: • 4302271 0054105 T20 ■ 23 HARRIS HAS IRFD210/211/212/213 IRFD21 OR/211R/212R/213R N-Channel Power MOSFETs Avalanche Energy Rated* A u gu st 1991 Features Package 4 -P IN D IP • 0.6A and 0.45A, 1SOV - 200V TOP VIEW • rDS on = 1-5 fl an(l 2-4 fl • Single Pulse Avalanche Energy Rated*

Contextual Info: h a r ^ IRFD220, IRFD221, IRFD222, IRFD223 s s e m i c o n d u c t o r 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

1RFD210

Abstract: IRFD210
Contextual Info: International [rag Rectifier PD-9.386G IRFD210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements V d ss = 2 0 0 V

1RFD123

Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Contextual Info: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*

irfd2z0

Abstract: 0n 4409 diode 4408
Contextual Info: h a r r is IRFD2Z0, IRFD2Z1 IRFD2Z2, IRFD2Z3 N -Channel Enhancem ent-M ode Power Field-Effect Transistors A ug ust 1 9 9 1 Package Features 4 - P IN D IP T O P V IEW • 0.30A and 0.32A, 150V - 200V • rDS on = 5.0H and 6.5H • S O A is Pow er-Dissipation Limited

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

irfd9123

Abstract: tc 9123 IRFD 123
Contextual Info: m IR F D 9 1 2 0 IR F D 9 1 2 3 HARRIS Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Features Package 4 - PIN D U A L -IN -L IN E TOP VIEW • -1.0 A and -0.8A , -8 0 V and -100V • rDS ON = 0-6H and 0 .8 ri • Single Pulse Avalanche Energy Rated

FD213

Contextual Info: 3 ] H A R R I S ÎR F D 2 1 0 /2 1 1 /2 1 2 /2 1 3 IR F D 2 1 0 R /2 1 1 R /2 1 2 R /2 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP TOP VIEW • 0.6A and 0.45A, 150V - 200V • rDS on = 1-5 fl and 2-4 n

mfe9200

Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
Contextual Info: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0

658512ALFP

Abstract: 658512 000nS
Contextual Info: HM658512AI Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh HITACHI ADE-203-286C(Z) Rev. 3.0 March 15, 1999 Description The Hitachi HM658512AI is a 4-Mbit pseudo static RAM organized 524288-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process

IRFD221

Abstract: 3203 MOSFET
Contextual Info: MOTOROLA SC ÍXSTRS/R F} Tfl 6367254, M O T O R O L A SC XSTRS/R F öF|fc,3t7aSL( 0003202 ; . 980 63282 D IRFD220-223 T ' 3 5 ~S lS ELECTRICAL CHARACTERISTICS — C o n tin u e d (Tc - 25°C unless otherwise noted) Characteristic Symbol Min Typ Max U nit

1rfd9210

Abstract: 387H IRFD9210 Rg2-55
Contextual Info: PD-9.387H International 11«1Rectifier IRFD9210 HEXFET Power M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channe! Fast Switching Ease of Paralleling V d s s _ -2 0 0 V R DS on =

Contextual Info: 4 3 0 5 57 1 0 0 S 4 1 1 5 17T • H a r r is HAS IRFD2Z0, IRFD2Z1 IRFD2Z2, IRFD2Z3 N-Channel Enhancement-Mode Power Field-Effect Transistors A ug ust 1 9 9 1 Features Package 4 -P IN DIP TOP VIEW • 0.30A and 0.32A, 150V - 200V • rD S on — 5 .O il and 6 .5 0

Z80 Assembly Language Programming Manual

Abstract: Z8S18016 Z8018006 z80180
Contextual Info: < £ 2 iL 0 E P r o d u c t S pe c if ic a t io n Z80180/Z8S180* Z 180 MICROPROCESSOR * Z 8 S 1 8 0 -PRELIMINARY FEATURES • Z80180 Supports Operating Frequency to 10 MHz On-Chip Clock Oscillator/Generator ■ Z8S180 Supports Operating Frequency to 20 MHz

C294

Abstract: 1RFD024
Contextual Info: PD - 9.699A International IGR Rectifier IRFD024 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 60V

1RFD110

Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
Contextual Info: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

Contextual Info: HM658512AI Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh HITACHI ADE-203-286C(Z) Rev. 3.0 March 15, 1999 Description The Hitachi HM658512AI is a 4-Mbit pseudo static RAM organized 524288-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process

IRFD9213

Contextual Info: H E I 4055452 0000422 T-37-25 7 | Data Sheet No. PD-9.387F INTERNATIONAL R E C T I F I E R I N T E R N A T I O N A L R E C T I F I E R IO R HEXFET* TRANSISTORS IRFD9210 P-CHANNEL HEXDIP IRFDS21 3 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE