1NS PULSE WIDTH CIRCUIT Search Results

100NS

Abstract: U018
Contextual Info: b e l / defining a degree of excellence DIGITAL DELAY LINE SERIES 0453 ECL 10KH PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 Logic 0 Rise Time 20% to 80% Pulse Width Pulse Period Supply Voltage, Vee Output Terminations

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The

Contextual Info: 16Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16C755HCT8 Series DESCRIPTION The Hynix HYM71V16C755HCT8 Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

HYM536120

Contextual Info: -HYUNDAI HYM536120 W-Series 1M x 36-bit CMOS DRAM MODULE DESCraPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22j»F decoupling

MA2180

Abstract: intel socket 423 pin assignments
Contextual Info: 64Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V64C756B L T4 Series DESCRIPTION The HYM72V64C756B(L)T4 -Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eighteen 64Mx4 bit Synchronous DRAMs in 54-pin TSOPII, two 48-pin SOP Register Buffers, one 24-pin SOP PLL and 8-pin

Contextual Info: m U V CA1 H a r r is M U S E M I C O N D U C T O R M Voltage Regulator Control Circuit For Variable Switching Regulator May 1992 Features Description • Operates up to 200kHz The CA1523* monolithic silicon integrated circuit is a vari­ able interval pulse regulator designed to provide the control

SN65LVD31

Abstract: AM26LS31 STLVDS31 STLVDS31BD STLVDS31BDR STLVDS31BTR TSSOP16
Contextual Info: STLVDS31 HIGH SPEED DIFFERENTIAL LINE DRIVERS • ■ ■ ■ ■ ■ ■ ■ ■ MEETS OR EXCEEDS THE REQUIREMENTS OF ANSI TIA/EIA-644 STANDARD LOW VOLTAGE DIFFERENTIAL SIGNALING WITH TYPICAL OUTPUT VOLTAGE OF 350mV AND A 100Ω LOAD TYPICAL OUTPUT VOLTAGE RISE AND

Contextual Info: HYUNDAI HY51V16404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V16404B is the new generation and fa st dynam ic RAM organized4,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CM OS silicon gate process technology as advanced circuit techniques to provide wide operating

Contextual Info: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P1623AT2-C1L 16M X 72 SDRAM DIMM with ECC based on 8M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P1623AT2-C1L is a 16M bit X 72 Synchronous Dynamic

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P3323ATE-C1H/H 32M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P3323ATE-C1H/H is a 32M bit X 72 Synchronous Dynamic RAM high density memory

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P3323BTE-C1H/S 32M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P3323BTE-C1H/S is a 32M bit X 72 Synchronous Dynamic RAM high density memory

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P1723BTE-C1H/S 16M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P1723BTE-C1H/S is a 16M bit X 72 Synchronous Dynamic RAM high density

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P1723AT2-C1L 16M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P1723AT2-C1L is a 16M bit X 72 Synchronous Dynamic

Contextual Info: • HYUNDAI _ HYM572A414A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404A in 24/26 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 uF

079R

Abstract: ZD256M58H 16X64 PC-100 PC100-222 16MX8
Contextual Info: REVISIONS REV DATE I. DESCRIPTION: ZONE W9Q316647LB-222 is a 8Mx64 industry standard 168-pin PC-100-222 SDRAM DIMM Manufactured with 8 16Mx8 400-mil TSOPII-54 PC100-222 Synchronous DRAM devices Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Requires 3.3V+/-0.3V power supply Inputs & outputs are LVTTL compatible

222k

Abstract: 079R PC-100 PC100-222 KO9018
Contextual Info: REVISION DATE REV DESCRPTION ZONE APPVD 6/26/01 III. TIMING I. DESCRIPTION: Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ W9Q316727KD-222K is a 16Mx72 industry standard 168-pin PC100-222 SDRAM ECC DIMM Manufactured with 18 NEC ELPIDA 8Mx8 400-mil TSOPII-54 100 MHz Synchronous DRAM devices of 12-row, 9-column, 4 -bank addresing.

AVED8P664LS48-C75

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8P664LS48-C75 8M X 64 SDRAM SODIMM based on 4M X 16, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMS with SPD DESCRIPTION AVED Memory Products AVED8P664LS48-C75 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The

Contextual Info: 144PIN PC100 Unbuffered SO-DIMM 128MB With 8M X 16 CL2 TS16MSS64V8C2 Placement Description The TS16MSS64V8C2 is a 16M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS16MSS64V8C2 consists of 8 piece of CMOS 2Mx16bitsx4banks Synchronous DRAMs in TSOP-II

Contextual Info: 128MB 168PIN PC100 CL2 SDRAM DIMM With 16M X 8 3.3VOLT TS16MLS64V8D2 Description Placement The TS16MLS64V8D2 is a 16M bit x 64 Synchronous Dynamic RAM high-density for PC-100. The TS16MLS64V8D2 consists of 8pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

MK32VT1664A-8YC

Contextual Info: MK32VT1664A-8YC 98.07.17 O K I Semiconductor MK32VT1664A-8YC 16,777,216 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):_ DESCRIPTION The Oki M K32VT1664A-8YC is a fully decoded, 16,777,216 x 64bit synchronous dynam ic random access memory composed of sixteen 64Mb DRAMs (8Mx8) in TSOP

Contextual Info: 168PIN PC100 Unbuffered DIMM 256MB With 16M X 8 CL3 TS32MLS64V8D 1Description Placement The TS32MLS64V8D is a 32M bit x 64 Synchronous Dynamic RAM high-density for PC-100. The TS32MLS64V8D consists of 16pcs CMOS 16Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8P744LS416-XX 8M X 72 SDRAM SODIMM with ECC based on 4M X 16, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED8P744LS416-XX is a 8M bit X 72 Synchronous Dynamic RAM high density memory