1NS PULSE WIDTH CIRCUIT Search Results

1nS pulse width circuit

Abstract: 9a sot23 FMMT2369A FMMT2369 FMMT2369R FMMTA2369A FMMTA2369AR HIGH SPEED SWITCHING NPN SOT23 DSA003691
Contextual Info: FMMT2369 FMMT2369A ISSUE 3 – AUGUST 1995 APPLICATIONS These devices are suitable for use in high speed, low current switching applications tON CIRCUIT t1 +10.6V 3V 3K3Ω CS < 4pF * -1.5V < 1ns tOFF CIRCUIT t1 +10.75V 3V 270Ω B SOT23 < 1ns Pulse width t1 =300ns

1nS pulse width circuit

Abstract: MPS2369A High speed switching Transistor
Contextual Info: MPS2369A t1 270Ω 3V MPS2369A ISSUE 2 – MARCH 94 FEATURES * 40 Volt VCEO * Very fast switching tON CIRCUIT +10.6V NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR C B 3K3Ω CS < 4pF * -1.5V < 1ns Pulse width t1 =300ns Duty cycle = 2% tOFF CIRCUIT t1

SP720

Abstract: Schaffner 5000 AN9612 150pf 6kv electro discharge machining IC121 SP721 SP723 VSP720 J1113
Contextual Info: Harris Semiconductor No. AN9612.1 Harris Intelligent Power April 1996 IEC 1000-4-2 ESD Immunity and Transient Current Capability for the Harris SP720, SP721 and SP723 Electronic Protection Array Circuits Author: Wayne Austin The SP723 capability surpasses those of the SP720 and

HY57V168

Contextual Info: »fl Y U M 0 A I * H YM 7V 75A 400C F-SER IES Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSO P 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33fiF and one 0.1 nF decoupling capacitors are mounted for each SDRAM.

Contextual Info: iS C S I/d e f in in g a degree of excellence DIGITAL DELAY LINE SERIES 0449 TTLPROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage Rise Time Pulse Width 3.2 Vblts 3.0 Nsec 10%-90% 1.5 x Maximum Delay Pulse Period 5 x Pulse Width

60NS

Abstract: 0449-0075-04
Contextual Info: Ë C ï l / defining a degree of excellence DIGITAL DELAY LINE SERIES 0449 TTLPROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage 3.2 Volts 3.0 Nsec 10%-90°/o Rise Time 1.5 x Maximum Pulse Width Delay Pulse Period

sony 448

Abstract: CX20116 CX2011
Contextual Info: CX20116PCB/CXA1066PCB SONY. 8bit, 1 1 0 M H z A / D Evaluation Board CX20116 PCB/CXA1066PCB is the evaluation printed circuit board for 8 bit high speed A/D converter CX20116/CXA1066K. On this one board, A/D, driver, standard voltage source, latches and ECL line

hym7v64400btfg

Abstract: hym7v64400
Contextual Info: HYM7V64400B F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit

hym7v64200

Contextual Info: HYM7V64200B F-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit

MSM photodetector

Abstract: GaAs MSM Ultrafast Photodetectors GMbh G4176 G4176-01 G7096 G7096-01 LPRD1022E01
Contextual Info: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs , G7096 SERIES (InGaAs) CONNECTION EXAMPLES G4176 G4176-01 G7096 G7096-01 PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) G7096 SERIES (InGaAs) Output Optical Input Electric Output G4176 (G7096)

pc133 sdram

Abstract: HYM4V33100DTYG-75
Contextual Info: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one

HYM7V64400BTFG

Abstract: hym7v64400
Contextual Info: " H Y U H P f t l - • HYM7V64400B F-SERIES Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3,3Volt synchronous dynamic RAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit

100NS

Abstract: U018
Contextual Info: b e l / defining a degree of excellence DIGITAL DELAY LINE SERIES 0453 ECL 10KH PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 Logic 0 Rise Time 20% to 80% Pulse Width Pulse Period Supply Voltage, Vee Output Terminations

Contextual Info: Ä FLESSE Y W S em ico n d u cto rs. SP9685AC ULTRA FAST COMPARATOR CONFORMS TO MIL-STD-883C CLASS B The SP9685 is an ultra fast com parator manufactured with a high performance bipolar process which makes possible very short propagation delays (2.2ns typ.). The circuit has

BYTE18

Abstract: BYTE65 HYM7V75AS1601ATNG
Contextual Info: 16Mx72 bit SDRAM “Intel” Registered DIMM N-Series with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A DESCRIPTION The HYM7V75AS1600A/ 75AS1601A/ 75AS1630A/ 75AS1631A N-Series are high speed 3.3-Volt

AN252

Abstract: IEC134 FBL Family DIODE FBL fbl diode
Contextual Info: INTEGRATED CIRCUITS APPLICATION NOTE AN252 Live Insertion Aspects of Philips Logic Families Author: Mike Magdaluyo Philips Semiconductors July 1999 Philips Semiconductors Application Note Live Insertion Aspects of Philips Logic Families AN252 Author: Mike Magdaluyo, Philips Semiconductors, Sunnyvale

Contextual Info: 16Mx64 bit SDRAM Unbuffered DIMM F-Series PC/100 SDRAM Specification Supporting based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V651600A/ HYM7V651601A/ HYM7V651630A/ HYM7V651631A DESCRIPTION The HYM7V651600A/ 651601A/ 651630A/ 651631A F-Series are high speed 3.3-Volt synchronous

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The

G03H1202

Abstract: IGA03N120H2 IKP03N120H2 PG-TO220-3-31
Contextual Info: IGA03N120H2 HighSpeed 2-Technology C • Designed for: - TV – Horizontal Line Deflection • 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability

HYM75V32M636LT6-H

Abstract: HYM75V32M636LT6-K HYM75V32M636T6-H HYM75V32M636T6-K RA12
Contextual Info: 32Mx64 bits PC133 SDRAM SO DIMM based on 32Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM75V32M636 L T6 Series DESCRIPTION The HYM75V32M636(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of four 32Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144 pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each

Contextual Info: 32Mx64 bits PC133 SDRAM SO DIMM based on 32Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM75V32M636 L T6 Series DESCRIPTION The HYM75V32M636(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of four 32Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144 pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each

G03H1202

Abstract: IGB03N120H2 IKP03N120H2
Contextual Info: IGB03N120H2 HighSpeed 2-Technology C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits