1NS PULSE WIDTH CIRCUIT Search Results

1nS pulse width circuit

Abstract: 9a sot23 FMMT2369A FMMT2369 FMMT2369R FMMTA2369A FMMTA2369AR HIGH SPEED SWITCHING NPN SOT23 DSA003691
Contextual Info: FMMT2369 FMMT2369A ISSUE 3 – AUGUST 1995 APPLICATIONS These devices are suitable for use in high speed, low current switching applications tON CIRCUIT t1 +10.6V 3V 3K3Ω CS < 4pF * -1.5V < 1ns tOFF CIRCUIT t1 +10.75V 3V 270Ω B SOT23 < 1ns Pulse width t1 =300ns

1nS pulse width circuit

Abstract: MPS2369A High speed switching Transistor
Contextual Info: MPS2369A t1 270Ω 3V MPS2369A ISSUE 2 – MARCH 94 FEATURES * 40 Volt VCEO * Very fast switching tON CIRCUIT +10.6V NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR C B 3K3Ω CS < 4pF * -1.5V < 1ns Pulse width t1 =300ns Duty cycle = 2% tOFF CIRCUIT t1

HYM7V65401BTRG

Contextual Info: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B R-Series Preliminary DESCRIPTION The Hyundai HYM7V65401B R-Series are 4Mx64bits Synchronous DRAM Modules composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glassepoxy printed circuit board. Two 0.33uF and a 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.

Contextual Info: 4Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B Q-Series Preliminary DESCRIPTION The Hyundai HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package on a 144pin glassepoxy printed circuit board. Three 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.

HYM7V65801

Contextual Info: 8Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B Q-Series Preliminary DESCRIPTION The Hyundai HYM7V65801B Q-Series are 8Mx64bits Synchronous DRAM Modules composed of eight 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package on a 144pin glassepoxy printed circuit board. Three 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.

hy57v168010D

Abstract: 4MX72 BIT SDRAM hy57v168010
Contextual Info: HYM7V75A400D F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400D is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33µF and one 0.1µF decoupling capacitors are mounted for each SDRAM.

hy57v16801

Contextual Info: HYM7V75A400C F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33µF and one 0.1µF decoupling capacitors are mounted for each SDRAM.

HYM7V65801BTFG-10S

Contextual Info: 8Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B F-Series Preliminary DESCRIPTION The Hyundai HYM7V65801B F-Series are 8Mx64bits Synchronous DRAM Modules composed of eight 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glassepoxy printed circuit board. A 0.33uF and a 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.

SP720

Abstract: Schaffner 5000 AN9612 150pf 6kv electro discharge machining IC121 SP721 SP723 VSP720 J1113
Contextual Info: Harris Semiconductor No. AN9612.1 Harris Intelligent Power April 1996 IEC 1000-4-2 ESD Immunity and Transient Current Capability for the Harris SP720, SP721 and SP723 Electronic Protection Array Circuits Author: Wayne Austin The SP723 capability surpasses those of the SP720 and

VSP720

Abstract: HIGH VOLTAGE SCR 6kv SP720
Contextual Info: Harris Semiconductor No. AN9612.1 Harris Suppression Products April 1996 IEC 1000-4-2 ESD Immunity and Transient Current Capability for the Harris SP720, SP721 and SP723 Electronic Protection Array Circuits Author: Wayne Austin The SP720, SP721 and SP723 are protection ICs with an

HY57V168

Contextual Info: »fl Y U M 0 A I * H YM 7V 75A 400C F-SER IES Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSO P 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33fiF and one 0.1 nF decoupling capacitors are mounted for each SDRAM.

"Digital Delay Line"

Abstract: 100NS 25NS 40NS 55NS 0451008
Contextual Info: BEL FUSE INC ^ ¿ Ë | 1351453 0000442 T | T-V7-/7 /defining a degree of excellence DIGITAL DELAY LINE SE R IE S 0451 ECL 10K PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 — 0.9 Volts Logic O -1 .8 Volts Rise Time 20% to 8 0 % 2.0 Nsec

Contextual Info: iS C S I/d e f in in g a degree of excellence DIGITAL DELAY LINE SERIES 0449 TTLPROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage Rise Time Pulse Width 3.2 Vblts 3.0 Nsec 10%-90% 1.5 x Maximum Delay Pulse Period 5 x Pulse Width

Contextual Info: b d / d e f i n i n g a degree of excellence DIGITAL DELAY LINE SERIES 0449 TTLPROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage 3.2 Volts Rise Time 3.0 Nsec 10%-90°/o Pulse Width 1.5x Maximum Delay Pulse Period 5 x Pulse Width

sony 448

Abstract: CX20116 CX2011
Contextual Info: CX20116PCB/CXA1066PCB SONY. 8bit, 1 1 0 M H z A / D Evaluation Board CX20116 PCB/CXA1066PCB is the evaluation printed circuit board for 8 bit high speed A/D converter CX20116/CXA1066K. On this one board, A/D, driver, standard voltage source, latches and ECL line

Contextual Info: bel/defining a degree of excellence DIGITAL DELAY LINE SERIES 0453 ECL 10KH PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 Logic 0 Rise Time 20% to 80% Pulse Width Pulse Period Supply Maltage, Vee Output Terminations -0 .9 Volts

Contextual Info: bel/ defining a degree of excellence DIGITAL DELAY LINE SERIES 0453 ECL 10KH PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 Logic 0 Rise Time 20% to 80% Pulse Width Pulse Period Supply Voltage, Vee Output Terminations -0 .9 Volts

hym7v64400btfg

Abstract: hym7v64400
Contextual Info: HYM7V64400B F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit

hym7v64400btfg

Contextual Info: HYM7V64400B F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit

hym7v64200

Contextual Info: HYM7V64200B F-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit

hym7v64400

Contextual Info: HYM7V64400B K-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 4Mx4 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit

Contextual Info: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hyundai HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one

MSM photodetector

Abstract: GaAs MSM Ultrafast Photodetectors GMbh G4176 G4176-01 G7096 G7096-01 LPRD1022E01
Contextual Info: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs , G7096 SERIES (InGaAs) CONNECTION EXAMPLES G4176 G4176-01 G7096 G7096-01 PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) G7096 SERIES (InGaAs) Output Optical Input Electric Output G4176 (G7096)

pc133 sdram

Abstract: HYM4V33100DTYG-75
Contextual Info: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one