1N816 DIODE Search Results

Contextual Info: Stabistors Forward Reference Diodes — — O — T Y P E NO. V 00 MIN MAX 1N816 - - C1N4156 - CMPD200 @ IF VF (mA) (V) MIN MAX \I f @ IF (mA) 0/) (mA) - - - - - - 0.90 1.00 0.01 CMPD300 1.40 1.54 CMPD400 1.82 CN4156 MIN MAX - 0.58 0.70 - - 1.21 1.05

1N816

Abstract: 1n816 diode Forward Reference Diode
Contextual Info: 1n 8 16 FORWARD REFERENCE DIODE STABISTOR Ml ! »utili • - - - sv central semiconductor Corp. JEDEC DO-35 CASE 145 Adams Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N816 ï s a Silicon Forward Reference Diode designed for low level voltage regulating applications where a stabistor is required.

BZ102 diode

Abstract: TRANSISTOR C 6090 BZX75C1V4 BZ102 BZX75C2V1 DIODE BZX75c3v6 BZX75C3V6 1N816 BZX75C-1V4 BZX75-C1V4
Contextual Info: AMERICAN POWER DEVICES SRE ». • 1N816 ,1 N3896, AP3897 - AP3898 AP4829 - AP4830, BZ102/0V7 - BZ102/3V4 BZX75C1V4 - BZX75C3V6, G129 - G130 STB-567 - STB-569, AP2360 - AP2361 american SEM ICO N D U C TO R S D73713S QQODOb? SSS ■ APD power devices, inc.

1N816

Abstract: CSTB568 9 140 010 154
Contextual Info: Stabistors Forward Reference Diodes = — HD DO-41 (0= TYPE HO. VF lp 00 1mA) f *0 « IF V'F 9 iF VIC 0 IF ViF @ »F (mA) 0n (mA) 0 1) (mA) 0 f) (mA) IMN MAX MM MAX IHN MAX DO-35 CASE | MIN MAX MIN MAX 1N816 - - - - - - 0.58 0.70 1.0 - - - - 1.00 100

BZX75C

Abstract: BZ102 diode 1n816 diode BZX75C1V4 G129 stabistor 1N816 BZX75-C2V1 AP2361 BZX75C-1V4 BZ102 1V4
Contextual Info: AMERICAN POWER DEVICES •73713S DODODSM S 23E D STABISTORS DO-35 Case DO-35 Case Type LEAD DIA NOT CONTROLLED THIS ZONE Voltage VR V 3d Stabistors are diffused silicon diodes with controlled forward voltage characteristics. They are offered with reference

1N485

Abstract: 1N816 do-7 1n844 1N622
Contextual Info: DIODES GENERAL PURPOSE DIODES NUMERIC LISTING GLASS PACKAGE TYPE Bv VOLTS MIN tRR ns @ «F mA C pF MAX MAX 10 nA •r @ Vr VOLTS VF @ MAX @ VOLTS MAX Package DO-7 1N461 30 500 @ 25 1.0 @ 15 1N461A 30 500 @ 25 1.0 @ 100 1N462 70 500 @ 60 1.0 @ 5 1N462A 70

MZ Series Zener

Abstract: MZ2362 MZ 043 MZ Motorola Zener Motorola MZ2362 1N816 1n816 diode MZ4627 DIODE MOTOROLA Case 403 MZ2360
Contextual Info: MZ1000-1 thru M Z1000-37 SILICON MINIATURE PLASTIC E N C A P S U LA T E D Z E N E R DIODES . . . fo r re gu lated p o w er s u p p ly c ircu its , s u rg e p ro te ctio n , a rc s u p p re s s io n and o th e r fu n c tio n s in te levision, a u to m o tiv e and

74ALS29821

Contextual Info: SN74ALS29821 10-BIT BUS INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS D2S2S, JANUARY 1986 - REVISED MARCH 1988 Functionally Equivalent to AMD AM29821 and AM29822 Provides Extra Data Width Necessary for Wider Address/Data Paths or Buses with Parity • Outputs Have Undershoot Protection

diode SG22

Abstract: 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141
Contextual Info: 3869720 G E N E R A L D IO D E CORP 86D 0 0 3 3 8 GENERAL DIODE CORP flb T - D E l B û b T O D DD0D33fl 3 1 T àl-à7 SILIC O N D IO D ES . . . cont’d Case Style — DO-7 'il % 9& <h r« yi o ° o TYPE 1N4B2A 1N4S3 1N463A 1N464 1N4B4A Ç90 ïO cl 30 30

SN72710L

Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Contextual Info: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor