1N816 Search Results

1N816

Contextual Info: 1N816 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N816 Availability Online Store Diodes

1N816

Abstract: CMZ2361 1n816 diode C1N4156 CMPD200 CMPD300 CMPD400 CN4156 CN4157
Contextual Info: Stabistors Forward Reference Diodes DO-41 DO-35 TYPE NO. VF @ IF VF @ IF VF @ IF VF @ IF VF @ IF CASE (V) (mA) (V) (mA) (V) (mA) (V) (mA) (V) (mA) MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX 1N816 - - - - - - 0.58 0.70 1.0 - - - - 1.00 100 DO-35 C1N4156

Contextual Info: .4M.64FR10/1N816 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) Semiconductor Material Package StyleDO-7 Description

BZ102 diode

Abstract: TRANSISTOR C 6090 BZX75C1V4 BZ102 BZX75C2V1 DIODE BZX75c3v6 BZX75C3V6 1N816 BZX75C-1V4 BZX75-C1V4
Contextual Info: AMERICAN POWER DEVICES SRE ». • 1N816 ,1 N3896, AP3897 - AP3898 AP4829 - AP4830, BZ102/0V7 - BZ102/3V4 BZX75C1V4 - BZX75C3V6, G129 - G130 STB-567 - STB-569, AP2360 - AP2361 american SEM ICO N D U C TO R S D73713S QQODOb? SSS ■ APD power devices, inc.

BZX75C2V8

Abstract: 1N816 BZX75C2V1 bzx75c1v4 AP4157 BZX75-C2V1 STB568 AP4830 BZX75-C2V8 G129 stabistor
Contextual Info: ÖB FENUAL ELECTRONICS/APD 3Ef 3 S m S t B I ' r- ODD DT 2-1 1 il- * 1 STABISTORS DO-35 Case DO-35 Case Type 1N816 1N3896 AP3897 AP3898 AP4829 Stabistors are diffused silicon diodes with controlled forward voltage charac­ teristics. They are offered with reference

1N816

Contextual Info: Stabistors Forward Reference Diodes * fl ) DO-35 = 0 TYPE NO. 1N816 VF @ if (V) (mA) MIN MAX - - - (V) MIN MAX - - STB-1 if VF @ if VF @ if vf @ if (mA) (V) (mA) (V) (mA) (V) (mA) @ Vf MIN MAX - 0.58 0.70 1.0 MIN MAX - - CASE MIN MAX - - 1.00 100 DO-35

Contextual Info: Stabistors Forward Reference Diodes — — O — T Y P E NO. V 00 MIN MAX 1N816 - - C1N4156 - CMPD200 @ IF VF (mA) (V) MIN MAX \I f @ IF (mA) 0/) (mA) - - - - - - 0.90 1.00 0.01 CMPD300 1.40 1.54 CMPD400 1.82 CN4156 MIN MAX - 0.58 0.70 - - 1.21 1.05

1N816

Abstract: C1N4156 CMPD200 CMPD300 CMPD400 CMZ2360 CN4156 CN4157 CN5179 cstb567
Contextual Info: Stabistors Forward Reference Diodes — — H > — T Y P E NO. VF ( V) MIN VF @ if \/ F @ (m A) ( V) (m A) V) (m A) MAX MIN MAX MIN MAX DO-35 (D = if @ DO-41 VF if if VF @ (m A) 0V ) (m A) @ { V) MIN MAX MIN MAX if CASE 1N816 - - - - - - 0.58 0.70 1.0

1N816

Abstract: CN4156 CN4157 C1N4156 CMPD200 CMPD300 CMPD400 CMZ2360 CSTB567
Contextual Info: Stabistors Forward Reference Diodes DO-41 DO-35 TYPE NO. VF @ IF VF @ IF VF @ IF VF @ IF VF @ IF CASE (V) (mA) (V) (mA) (V) (mA) (V) (mA) (V) (mA) MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX 1N816 - - - - - - 0.58 0.70 1.0 - - - - 1.00 100 DO-35 C1N4156

1N816

Abstract: 1n816 diode Forward Reference Diode
Contextual Info: 1n 8 16 FORWARD REFERENCE DIODE STABISTOR Ml ! »utili • - - - sv central semiconductor Corp. JEDEC DO-35 CASE 145 Adams Avenue Hauppauge, New York 11 788 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N816 ï s a Silicon Forward Reference Diode designed for low level voltage regulating applications where a stabistor is required.

1N816

Abstract: CSTB568 9 140 010 154
Contextual Info: Stabistors Forward Reference Diodes = — HD DO-41 (0= TYPE HO. VF lp 00 1mA) f *0 « IF V'F 9 iF VIC 0 IF ViF @ »F (mA) 0n (mA) 0 1) (mA) 0 f) (mA) IMN MAX MM MAX IHN MAX DO-35 CASE | MIN MAX MIN MAX 1N816 - - - - - - 0.58 0.70 1.0 - - - - 1.00 100

qml-19500

Abstract: 1N816 1n816 diode 1N81
Contextual Info: INCH-POUND MIL-PRF-19500/199D 14 August 2006 SUPERSEDING MIL-PRF-19500/199C 25 February 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FORWARD-VOLTAGE REGULATOR, TYPE 1N816, JAN MIL-PRF-19500/199 is inactive for new design as of 7 June 1999.

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

MZ Series Zener

Abstract: MZ2362 MZ 043 MZ Motorola Zener Motorola MZ2362 1N816 1n816 diode MZ4627 DIODE MOTOROLA Case 403 MZ2360
Contextual Info: MZ1000-1 thru M Z1000-37 SILICON MINIATURE PLASTIC E N C A P S U LA T E D Z E N E R DIODES . . . fo r re gu lated p o w er s u p p ly c ircu its , s u rg e p ro te ctio n , a rc s u p p re s s io n and o th e r fu n c tio n s in te levision, a u to m o tiv e and

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

D3D7_FDH6308C

Abstract: FJH1101 1N4151TR 1N3070TR 1N4148TA 1S921TR 1N75 1N816 FZD2_DHFZ006A 1N5231CTR
Contextual Info: Date Created: 1/4/2004 Date Issued: 1/25/2004 PCN # 20040103 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

1N48 diode

Abstract: 1N4156 BZX75C1V4 BZX75C3V6 BZX75-C2V1 BZX75C-1V4 BZ102 diode 1N48 MPD200 1N816
Contextual Info: AMERICAN POWER 0737135 D DEVICES american SEMICONDUCTORS p o w e r devices, 4 .T «APD 1N4156,1N4157 1N4829,1N4830 1N5179 MPD200, MPD300, MPD400 inc. Stabistor diodes — high speed, multi-pellet, ultra low leakage FEATURES MAXIMUM RATINGS • • • •

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,