1N681 Search Results

1N6815

Abstract: 1N6815R MSASC25H45K MSASC25H45KR MSC1032
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6815 (MSASC25H45K) Features • • • • • • Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

1N6819

Abstract: 1N6819R MSASC75W45F MSASC75W45FR VF10 MSC1030
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6819 (MSASC75W45F) PRELIMINARY Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

ST CHN 510

Abstract: chn 714 chn 725 CHN 725 diode CHN 520
Contextual Info: • Microsemi m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology 1N6815 (MSASC25H45K) Features 1N6815R Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents

JANTX, JX, JAN

Abstract: 1N6810UEG2 1N6807 Marking jx 1N6804UEG2
Contextual Info: JAN and JANTX 1N6804UEG2 thru 1N6810UEG2 Vishay Semiconductors Patented* formerly Glass Passivated Rectifiers I I ED MIL TA Reverse Voltage 50 to 1000V Forward Current 1.0A FI DO-214BA UEG2 Q RY UA L 1.7 1.0 Mounting Pad Layout 4.8 3.95 0.066 MIN. (1.68 MIN.)

MSASC25W100KV

Abstract: MSASC25W100K MSASC25W100KS 1N6817 1N6817R MSASC25W100KR PS11
Contextual Info: 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 (MSASC25W100K) 1N6817R Features • • • • • • • • • Tungsten schottky barrier Oxide passivated structure Guard ring protection for increased reverse energy capability

Contextual Info: Micmsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6819 (MSASC75W45F) Features Oxide passivated structure for very low leakage currents;!? Guard ring protection for increased reverse energy c

Contextual Info: Micmsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6818 (MSASC75H45F) Features V R if Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy c

1NS819

Abstract: J 6820 1N5B18 1n6817 SR1635C SR360
Contextual Info: SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE TO 5 0 AMPERES 2 0 VOLTS TO 6 0 VOLTS ’' N T — \ 1o Al (V 40 35 30 1.0 IN 17 1N18 - 1N19 - - - R-1 1.0 1S20 1S30 - 1S40 - 1S50 1S60 R-1 SR150 SR160 00-41 1.0 1N6817 1N5B18 1NS819 1.0 SR I 20 SR130 SRI 40 45 50 20

Contextual Info: • Microsemi m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology MSASC25W45K (1N6816) MSASC25W45KR (1N6816R) Features Tungsten schottky barrier Oxide passivated structure for very low leakage currents

1N6815

Abstract: 1N6815R MSASC25H45K MSASC25H45KR PS11 MSASC25H45KS
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6815 (MSASC25H45K) 1N6815R Features • • • • • • • • • Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents

1N6817

Abstract: 1N6817R MSASC25W100K MSASC25W100KR
Contextual Info: 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 (MSASC25W100K) 1N6817R PRELIMINARY Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

1N6818

Abstract: 1N6818R MSASC75H45F MSASC75H45FR VF10
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6818 (MSASC75H45F) PRELIMINARY Features • • • • • • Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

Contextual Info: • Microsemi m m Santa Ana, CA m 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology (MSASC25W100K) Features <ide p a s d v M e d structure fa r v«ry low le akage currents mrd ring protection to r in c re ^ |e d reverse- energy c a p a b it y i

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1n6804

Abstract: 1N6809 DO-214BA JAN1N6804UEG2 JAN1N6810UEG2 1N6810 1N681
Contextual Info: Q UA LI JAN1N6804UEG2 thru 1N6810UEG2 ED MIL I RY FI TA Glass Passivated Rectifiers DO-214BA UEG2 1.7 1.0 4.8 3.95 .41 .15 Reverse Voltage 50 to 1000V Forward Current 1.0A Dimensions in millimeters Glass-plastic encapsulation technique is covered by

msc diode

Abstract: 2N2708 Sertech Labs mrf892 1N6815 Microsemi New MOSFETs MS1631 2N4033 "RF MOSFETs" 15KW
Contextual Info: Fall 1998/Winter 1999 conditioning ThinKey Package in Production Microsemi's Santa Ana division is now in production on a complete line of hermetic rectifiers. These devices are offered in the Microsemi patented ThinKey package with RθJC ratings as low as 0.2oC/W. Available in strap to

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

marking jc ja jd

Abstract: 1n6804 1N6806 1N6805 1N6807 88654 DO-214BA JAN1N6804UEG2 JAN1N6810UEG2 1N6809
Contextual Info: JAN1N6804UEG2 thru 1N6810UEG2 Vishay Semiconductors Patented* formerly Glass Passivated Rectifiers I I ED MIL TA Reverse Voltage 50 to 1000V Forward Current 1.0A FI DO-214BA UEG2 Q RY UA L 1.7 1.0 Mounting Pad Layout 4.8 3.95 0.066 MIN. (1.68 MIN.)

KL SN 102 94v-0

Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Contextual Info: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results

IRF9730

Abstract: any circuit using irf830 battery charger "mcv 7" LTC1325 IRF973 1N6818 IRF9531 IRFZ34 LTC1325CN LTC1325CSW
Contextual Info: LTC1325 Microprocessor-Controlled Battery Management System U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Fast Charge Nickel-Cadmium, Nickel-Metal-Hydride, Lithium Ion or Lead-Acid Batteries under µP Control Flexible Current Regulation:

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

1N5822 ss24

Abstract: 1N5819 SS14 1N5822 SS34 melf 6060V 1n6817 MBR2
Contextual Info: SCHOTTKY RECTIFIERS PART NUMBERING SYSTEM Part numbering system for all parts excluding JEDEC registered and industry standard parts. 1. SURFACE-MOUNT 2. AXIAL AGL41 -Y Y a SMX SSXY - ZZZZ 3. POWER PACKAGES cont'd) A A A B X X Y Y P P - ZZZZ XX=Forward Current (in Amps)