1N6392 JANTX Search Results

Contextual Info: International [^Rectifier PD-2.386 75HQ045 1N6392 1N6392 JANTX1N6392 JANTXV1N6392 [ MIL-S-19500/554] SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Description/Features Characteristics 1N6392 Units *F AV Rectan9u|ar waveform 60* A VRWM 45*

Contextual Info: 1N6392 Qualified Levels: JAN, JANTX, and JANTXV Schottky Barrier Rectifier Available on commercial versions Qualified per MIL-PRF-19500/554 DESCRIPTION This schottky barrier diode provides low forward voltage and offers military grade qualifications for high-reliability applications. This rugged DO-213AA rectifier is ideal for extreme

21133

Contextual Info: Schottkv Rectifiers Microsemi ' Microsemi Division SDS040PF FST5045 FST5050 SBR5050PF FST5080 FST5090 FST50100 FST6210 FST6215 FST6220 SBR6020 SBR6025 FST6130 SBR6030 FST5535 SD241 SDS1 SD241 SD51 FST6135 1N5834 FST5540 FST6140 SBR6040 1N6392 FST5545 FST6145

jantx1N3295

Abstract: 19500 jantx1n6391 JAN1N3289R M65S JANTXV1N JANTX1N3289 1N3289 1N6391 JAN1N6391
Contextual Info: INTERNATIONAL RECTIFIER 5bE II • T~03-0/ 485S4S2 0010180 & ■ Government/ Space Products International SRectifier Rectifiers, MIL-Qualified Schottky Rectifiers Part Numbers JE D E C 1N6391 1N6392 JA N JAN1N6391 JAN1N6392 JA N T X JANTX1N6391 JANTX1N6392

1N6392 JANTX

Abstract: 75HQ045 1N6392 JANTX1N6392 1N6392 75HQ045 DO-203AB JAN1N6392 JANTXV1N6392
Contextual Info: International HH Rectifier 75S1 1N6392 JANTX1N6392 JANTXV1N6392 [ M IL-S-19500/554] SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Characteristics 'f a v Rectangular Description/Features 1N6392 Units 60* A 45* V waveform V RWM 'fs m 60Hz

1N6392 JANTX

Abstract: 1N6392 C-107 1N6392 JANTXV
Contextual Info: Military Schottky Rectifier 1N6392 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1/2 threads 2. Standard Polarity: Stud is Cathode at A B C D E F G H J K M N P - - .669 .687 .794 1.000 .453 .200 .450

260J

Abstract: 1N6392
Contextual Info: Military Schottky Rectifier 1N6392 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is Cathode A B C D E F G H J K M N P R _ _ _ _ .669 .688 .794 1.000 .453 .200

19500/554

Abstract: 1N6392 JANTX 1N6392
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SCHOTTKY RECTIFIER Qualified per MIL-PRF-19500/554 DEVICES LEVELS 1N6392 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)

FED-STD-H28 chamfer

Abstract: FED-STD-H28 1N6392
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SCHOTTKY RECTIFIER Qualified per MIL-PRF-19500/554 DEVICES LEVELS 1N6392 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)

1N6392

Abstract: FED-STD-H28
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SCHOTTKY RECTIFIER Qualified per MIL-PRF-19500/554 DEVICES LEVELS 1N6392 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)

1n6392

Contextual Info: 2 ÖE D TELEDYNE COMPONENTS • 0^ 17^02 ü ü ü h b a a i SS T -Q l-l\ POWER SCHOTTKY DIODE Ä'i.ÄVi.'.'.ViV •’S’n-YNVvftS' - N - ri'.'AiVi'i'.'iV. .«¿Ä'V'i'.'tVii» 50A peak, 45V 1N6392 JAN, JANTX, JANTXV pending Jâ .a Ä ü 1 .Sì < & .vi 'S

1N6392

Abstract: 1N6392 JANTX
Contextual Info: POWER SCHOTTKY RECTIFIERS » TX JANTXV FEATURES • Very Low Forward Voltage 0.6 at 60A, 125°C DESCRIPTION The 1N6392 Schottky barrier power recti­ • L o w R e c o v e r e d C h a rg e f ie r ¡3 i d e a ll y s u i t e d f o r o u t p u t r e c tifie rs

Contextual Info: POWER SCHOTTKY RECTIFIERS » V FEATURES • Very Low Forward Voltage 0.6 at 60A, 125°C • Low Recovered Charge • Rugged Package Design (DO-5) • High Efficiency for Low Voltage Supplies • Low Thermal Resistance (1.0°C/W) • High Surge Current (800A)

1N6392

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 February 2010. INCH-POUND MIL-PRF-19500/554E 24 November 2009 SUPERSEDING MIL-PRF-19500/554D 25 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER,

60HQ100

Abstract: JANTX1N6392
Contextual Info: International Government and Space liQ R lR e c t i f i e r Schottky Diode Hermetic Packages 8-60 Amps Case Part Number VRRM V 'F(AV) @ (A) Tc •f (AV) @ t c VFM @ >FM 25°C(V) (C) Outline !r M @ v RWM 25°C(mA) Max. Tj Number (1) 5EQ100 8EQ045 100 45 8

Contextual Info: G o v e rn m e n t • ‘,a5S1,;’2 o o i b i ? 3 Mm H I M * S o ac e Pro d u cts INTERNATIONAL RECTIFIER u p a i f G i IU U U U IO O th e r Products bSE » Fro m IR S c h o ttk y — H ig h Reliability/Mil Qualified Pari Number VRRM lF AV @ Tc Vf M >FM

Contextual Info: Other Products from IR _^ Government and Space Schottky Diode Hermetic Package 8 - 60 Amps _ Case Part Number Outline Max. Tj Number Vr r m V >F(AV)@ t C (A) 'F(AV) @ Tc (C) VFM @ >FM 25°C(V) 5EQ100 8EQ045 100 45 8 10 100 100 0.80 0.65 5 5

200cnq050

Contextual Info: IN TER NAT IO NA L R E C T I F I E R HE D | 4055455 GG1DDE3 3 | r*-o 3 *«2 / Schottky Rectifiers 25 T O 440 A M P S ' f AV @ T C Part Number V RW M vF M @ 'r m T j = 125°C & 'fm Rated VRW M Max. Tj (V) (A) (°C) (A) (mfl) <°C) 200CNQ030 200CNQ035 200CNQ040

Contextual Info: Military Schottky Rectifier 1N63t 2 Dim M illim ete r Inches M inim um M axim u m M inim um M axim u m N o te s EL Notes: 1. Full th re a d s within 2 1 / 2 th read s 2. S ta n d a rd P o larity: S tu d is C a th o d e □o d : A B C D E F G H J K M N P _

scr 8a 200v

Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Contextual Info: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified

B60C 800 Si

Abstract: 0/B60C 800 Si
Contextual Info: 1 I n t e r n a t io n a l R e c t i f i e r G o v e rn m e n t a n d S p a c e P ro d u c ts Paît Number 2 BV[)SS (Volts) RDS(on) (Ohms) Ip • Tc°25° (Amps) Id 9 TC«100" (Amps) Total Dos* Rating Rads (Si) Pd O Tc=25* (Watts) 15 7 15.3 12.7 6.0 24.3

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

IRF1644

Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.