1N60 PACKAGE Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

UTC1N60

Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

mosfet 1N60

Abstract: 1n60 1N60 TO92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

1n60b

Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

1n60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

SMALL SIGNAL SCHOTTKY DIODES DO-35

Abstract: 1N60P diode 1n60 1N60 diode 1N60P, DO-35 TC1N60 1N60 DO35 1N60 PACKAGE
Contextual Info: PRELIMINARY DATASHEET 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2A 600V N-CHANNEL MOSFET 1 FEATURES TO- 251 * Typical RDS ON =9.3Ω@VGS = 10V. * Avalanche rugged technology * Low gate charge (typical 5.0nC) * Low Crss (typical 3.0 pF) * 100% avalanche tested * Excellent switching characteristics

1N60 diode

Abstract: diode 1n60 1N60 MIL-HDBK-263
Contextual Info: E 1N60 VDSS = 600V ; ID = 1.7 A ; RDS ON = 7 .0Ω 100% Tested at Probe MOSFET Die in Wafer Form Key Electrical Characteristics (TO-220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance

11n60p

Abstract: SMALL SIGNAL SCHOTTKY DIODES DO-35 1n60 DIODE 1n60p
Contextual Info: PRELIMINARY DATASHEET 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage

diode 1n60

Abstract: 1n60 diode 1N60P 1N60 Diode Equivalent 1N60 1N60 PACKAGE SMALL SIGNAL SCHOTTKY DIODES DO-35 TC1N60 DO35
Contextual Info: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage

1N34A do-35

Abstract: 1N34A reverse recovery OA47 AA118 AA143 oa90 AA143 OA90 AA218 1N60 LL 34 1N3467
Contextual Info: B IC C I N T E R N A T I O N A L 30E D • H7nfl3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270

tape head pre amplifier

Abstract: TAPE RECORDER bias application TAPE RECORDER cassette tape head 16DIP300 1N60 PACKAGE diode 1n60 DUAL PRE-AMPLIFIER FOR TAPE RECORDER TAPE RECORDER bias
Contextual Info: 1 CHIP TAPE RECORDER SYSTEM S1A2213C01 INTRODUCTION The S1A2213C01 is a monolithic integrated circuit consisting of a preamplifier, ALC circuit, and power amplifier in a 14pin/16 pin plastic dual-in-line package with heat sink. 14−DIPH−300 FEATURES 16−DIP−300

TAPE RECORDER bias

Abstract: TAPE RECORDER bias application 16DIP300 diode 1n60 DUAL PRE-AMPLIFIER FOR TAPE RECORDER tape head pre amplifier PRE-AMPLIFIER FOR TAPE RECORDER
Contextual Info: 1 CHIP TAPE RECORDER SYSTEM S1A2213B01 INTRODUCTION The S1A2213B01 is a monolithic integrated circuit consisting of a preamplifier, ALC circuit, and power amplifier in a 14pin/16 pin plastic dual-in-line package with heat sink. 14−DIPH−300 FEATURES 16−DIP−300

49mhz remote control receiver circuit

Abstract: proportional Remote Control Toy Car 49mhz toys
Contextual Info: PT8A995/9961/9962/9963/9964 Digital Proportional Remote Controller with 2 Analog CHs & 2 Digital CHs Features • Description PT8A995 works as encoder and PT8A9961/9962/ The PT8A995 and PT8A996x provide a simple and eco- 9963/9964 work as decoders nomic solution for basic Digital Proportional R/C car toys.

RF toy plane circuit diagram

Abstract: Futaba-S3003 PT8A201W TOY CAR REMOTE CONTROL RECEIVER car steering remote control circuit remote control toy car circuit diagram remote control toy car 49mhz remote control receiver circuit 49mhz toys REMOTE CONTROLLER toy car
Contextual Info: Data Sheet PT8A995/9961/9962/9963/9964 Digital Proportional Remote Controller with 2 Analog CHs & 2 Digital CHs |

1N79

Abstract: 1N60 1N63 1N66 APA075 Actel APA075 stapl
Contextual Info: Application Note AC227 How To Use UJTAG Introduction UJTAG is an embedded macro for the ProASICPLUS and ProASIC3 device families. It is implemented in unused I/O tiles and used as the interface between external JTAG ports and internal logic. This macro can

AAZ17

Abstract: AA218 AA117 AA213 OA47 AA130 1N34A 1N60 AAY30 AA121
Contextual Info: w H «*t N * t* K * * T yp o V o te AA117 M i 10 dû 80 AA121 » . AAÎ23 AA130 AAU 3 AA1AA AAY30 AAY32 A A V 3T AAY42 M Z 1 3. * * m ax. V o.i8 0.5 30 1K100Â 20 200 75 15 30 25 0.42 10 10 J5 _ 0.6 OJ 0.45 50 10 100 0.46 10 900 20 60 200 10 100 1.5 0.75

Contextual Info: 1N6036 - 1N6072A series 1N6036 - 1N6072A IN60 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) FEATURES • Stand-off voltage range 6.8 - 200 Volts • Glass Passivated Junction 31.8Min

Contextual Info: 1N6036 • 1N6072A SERIES IN60 Series 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (HERMETICALLY SEALED PACKAGE FOR HARSH INDUSTRIAL ENVIRONMENTS) 3 1 .8Min a FEATURES ■ ■ ■ ■ ■ ■ ■ ■ Stand-off voltage range 6.8 - 200 Volts Glass Passivated Junction

Contextual Info: GENERAL PURPOSE DIODES, C1 CAN M inim um B reakdow n P a rt Num ber V . . . V C ontinuous laxlm um A ve ra g e I l l l l f i R everse Forw ard C u rre n t C u rre n t 1. <UA) Forward Voltage Drop T .« 2 5 « C T„»1 d o ° c v* (V olts) ta |m A ) V, (V o lts)