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    1N60 PACKAGE Search Results

    1N60 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54ACT825/QKA
    		Rochester Electronics LLC 54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP PDF Buy
    TPH1R306PL
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQH
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Datasheet
    TPHR8504PL
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQ5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Datasheet

    1N60 PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N60 germanium diode

    Abstract: germanium diode 1N60 041 germanium DIODE 1N60 diode 1N60H selenium diode 1n60 germanium diode GOLD diode 041
    Contextual Info: 1N60 GOLD BONDED GERMANIUM DIODE 0.41 Diodes Germanium and Selenium . Page 1 of 1 Enter Your Part # Home Part Number: 1N60 Online Store 1N60 Diodes GOLD BONDED GERMANIU M DIODE Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		com/1n601n60 germanium diodegermanium diode 1n60041 germanium diode+61n60 diode1n60hselenium diode1n60germanium diode golddiode 041 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		qw-r502-052 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		qw-r502-052 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		qw-r502-052 PDF

    UTC1N60

    Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		ot-223o-220o-220fo-251+9o-252qw-r502-052utc1n601n60l1n60ga1n60g1n60 mosfetto126 mosfetmosfet 12a 600v PDF

    mosfet 1N60

    Abstract: 1n60 1N60 TO92
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		qw-r502-052mosfet 1n601n601n60 to92 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		qw-r502-052 PDF

    1n60b

    Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		qw-r502-0521n60b1n60 diode1n60 mosfet+71n60a600v 2a sot223 mosfet n-channel1n60g1n60-b1n60diode 1n60utc1n60 PDF

    1n60

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		qw-r502-0521n60 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		1n60-kwqw-r205-054 PDF

    1n60

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		o-252o-220qw-r502-0521n60 PDF

    1N60 MOSfet

    Abstract: 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		o-220qw-r502-0521n60 mosfet1n60 diode+81n60-tm3-t1n60diode 1n601n60-ta3-tc25 diode to220c25 mosfet1n60l-tf3-t1n60l PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		o-220f2ot-223o-220o-220f+1qw-r502-052 PDF

    Contextual Info: Part: 1N6043 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		1n6043/10x100010x16010x1000 PDF

    Contextual Info: Part: 1N6036 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		1n6036/0x100010x16010x1000 PDF

    Contextual Info: Part: 1N6055A Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		1n6055a10x100010x160 PDF

    diode 1n6045

    Contextual Info: Part: 1N6045 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		1n6045/10x100010x16010x1000+1diode 1n6045 PDF

    Contextual Info: Part: 1N6068 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		1n606810x16010x1000 PDF

    Contextual Info: Part: 1N6053 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		1n6053/10x100010x16010x1000 PDF

    diode 1n60

    Abstract: 1N60 diode
    Contextual Info: Part: 1N6040 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		1n604010x100010x160diode 1n60+11n60 diode PDF

    Contextual Info: Part: 1N6047 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		1n6047/10x100010x16010x1000 PDF

    Contextual Info: Part: 1N6041A Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		1n6041a10x100010x160 PDF

    Contextual Info: Part: 1N6050 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		1n6050/10x100010x16010x1000 PDF

    Contextual Info: Part: 1N6040A Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		1n6040a10x100010x160 PDF