1N5819 PACKAGE Search Results

datasheets diode 1n5819

Abstract: 1N5818 1N5818-1N5819 1N581x 1N5819 DO-204AL
Contextual Info: Bulletin PD-20590 04/01 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been

1n5819

Contextual Info: 1N5819 40V; 1.0A Schottky Barrier Rectifier. For Use In Low Voltage - High Frequency. Page 1 of 1 Enter Your Part # Home Part Number: 1N5819 Online Store 1N5819 Diodes 40V; 1.0A Schottky Barrier Rectifier. For Use In Low Transistors Integrated Circuits Voltage - High Frequency Inverters - Free Wheeling And

Contextual Info: POWER SCHOTTKY RECTIFIERS 1N5817 1N5818 1N5819 1A, Up to 40V FEATURES DESCRIPTION • Very Low Forward Voltage 0.45V max @ 1A for the 1N5817 • Low Stored Charge, Majority Carrier Conduction • Economical, Convenient Plastic Package • Small Size The 1N5817, 1N5818 and 1N5819 series

Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2

Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2

1n4001 melf

Abstract: BY253 BY254 1N5819M
Contextual Info: Schottky Rectifiers, Rectifiers Silicon Schottky Barrier Rectifiers 1 A Average Rectified Current a t T L = 90 °C Type 1N5817 1N5818 1N5819 1N5817 to 1N5819 DO-41 Glass Package 1N5817M to 1N5819M (MELF Glass Package) 1N5817M 1N5818M 1N5819M Silicon Rectifiers 1A

1N5819

Abstract: 1N5817 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 FEATURES

1n5819 equivalent

Abstract: 1n5819
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5819 SOD-323

Contextual Info: APPROVE SHEET Customer: Customer Part Number: 1N5817~1N5819 PanJit Part Number: 1N5817~1N5819 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129

1N5817

Abstract: 1N5818 1N5819 diode cross reference 1N5819
Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2

Contextual Info: Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2

1n5819

Contextual Info: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength

Contextual Info: 1N5819 asi SCHOTTKY RECTIFIER PACKAGE STYLE D O -41 Î DESCRIPTION: t . O 25 (25.4 The 1N5819 is a General Purpose Schottky Rectifier Designed for use in Switching Power Supply Applications. yih MIN J .107 (2.7Ì .080(2.0) .205(5.2) .160(4.1) MAXIMUM RATINGS

DO-41

Contextual Info: Formosa MS Axial Leaded Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2

1N5817

Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1n5819 equivalent

Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: 1N5819-1 and 1N5819UR-1 Standard HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. C.2 AVAILABLE AS 1N5819-1, 1N5819UR-1 JAN EQUIVALENT: SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1*

datasheets diode 1n5818

Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

VS-1N5819TR-M3

Abstract: VS-1N5819-M3 1n5819 vishay make
Contextual Info: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength

Contextual Info: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength

1N5817-1N5819

Abstract: 1N5817 1N5818 1N5819 semiconductor band color code
Contextual Info: 1N5817-1N5819 1N5817 - 1N5819 Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 COLOR BAND DENOTES CATHODE 1.0 Ampere Schottky Barrier Rectifiers

1N5817

Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

diode 1N5819

Contextual Info: Axial Lead Schottky Diode Package 1N5819 Datasheet Features • Low forward voltage: 550 mV @ IF = 1 A • High reverse breakdown voltage:  30 V • RoHS Compliant • Hermetically Sealed Axial Lead Glass Package Description The Aeroflex/Metelics 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low

1N5818

Abstract: datasheets diode 1n5818 1N5819 1N581X DO-204AL
Contextual Info: Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 225