1N51 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 1N3643-1N3647 1N4254-1N4257 1N5181-1N5184 HIGH VOLTAGE RECTIFIERS MAXIMUM RATINGS Parameter Value Operating and Storage Temperature: -65 to +175°C Thermal resistance 38° junction to lead at 3/8” lead length from body Average rectified forward current IO

1N4830

Abstract: mpd200
Contextual Info: DIGITRON SEMICONDUCTORS 1N4156, 1N4157, 1N4453, 1N4829, 1N4830, 1N5179 MPD100 – MPD400A STABISTORS TIGHT TOLERANCE Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Contextual Info: 1N5142 asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5142 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA -nrB MAXIMUM RATINGS - 250 mA If Vr 60 V P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C

1N4097

Abstract: 1N5107 1N508 MZ-11 MZ240 MZ210 1N5117 MZ80 1N5064 1N5065
Contextual Info: 1N5063 - 1N5117 MZ806 - MZ890, MZ 210 - MZ 240 Micro/semi Corp. The diode expprts SANTA A N A , CA F o r m o r e i n f o r m a ti o n call: 714 979-8220 3-WATT GLASS ZENER DIODES FEATURES • • • • • • • Microminiature package. Voidless hermetically sealed glass package.

mz218

Contextual Info: DIGITRON SEMICONDUCTORS 1N4096-1N5117 MZ806-MZ890 MZ210-MZ240 3 WATT ZENER DIODES MAXIMUM RATINGS Operating Temperature -65 to 175°C Storage Temperature -65 to 200°C ELECTRICAL CHARACTERISTICS Electrical Specifications @ 25°C Type note 1 Nominal Zener

Contextual Info: 1N5140A asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5140A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA Millimeters Inches Dim: Min Max Min Max A 5.84 7.62 0.230 0.300 250 mA B 2.16 2.72 0.085 0.107 D 0.46 0.56 0.018

varactor 1N5144

Abstract: 1N5146 1N5139 1N5139A 1N5140 1N5140A 1N5141 1N5141A 1N5142 1N5142A
Contextual Info: GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A PART NUMBER 1N5139 ♦ 1N5139A 1N5140 ♦ 1N5140A 1N5141 ♦ 1N5141A 1N5142 ♦ 1N5142A 1N5143 ♦ 1N5143A 1N5144 ♦ 1N5144A 1N5145 ♦ 1N5145A 1N5146 ♦ 1N5146A 1N5147 ♦ 1N5147A

1N5171

Abstract: 1N5172 mh70 2A200 Solitron 2a200 1N5176
Contextual Info: rectifiers 19 2A SERIES JEDEC REGISTRATION CASE STYLE 1N5170 thru 1N5178 1N4517 G Solitron Part Numbers Jedec Type !. PIV Jedec Type PIV 15 N/A MCV 15 N/A 2A30 30 N/A MC30 30 1N5171 2A50 50 N/A M67 50 1N5172 2A100 100 N/A MH67 50 1N4517 2A200 200 N/A M68

HS10

Abstract: HVE20 HVE75 HS10-100 1N3643 HS15 HVE10 HVE40
Contextual Info: HIGH VOLTAGE SILICON RECTIFIERS HS10-100 HVE10-30 1N3643-47 HVE40-100 (1N5181-84) 100-250 m A S tan da rd R ecovery, M in a tu re FEATURES DESCRIPTION • • • • • The H VE/H S silico n re c tifie r series com ­ bine a m edium average re ctifie d current

IN5190

Abstract: IN5187 IN5188 1N5190 JANTXV 1N5186 1N5187 1N5188 1N5190 IN5186 IN518
Contextual Info: RECTIFIERS 1N5186-1N5190 JAN & JANTX Military Approved, 3 Amp, Fast Recovery FEATURES • Continuous Rating: 3A • Qualified to MIL-S-19500/424 • P IV : to 600V • Recovery Tim e: 150ns • Miniature Size • Controlled Avalanche DESCRIPTION These miniature fast recovery rectifiers

DSAIH0002559

Contextual Info: DO-35 High Voltage I Current Use Advantages 1N5194 thru 1N5196 I Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.

MZ240

Abstract: N5074 umi 122 N5091 1N5113 1N5063 1n5091 245 zener N4097 N5064
Contextual Info: 1 N 5 0 6 3 • 1N5117 M Z806 - M Z890, M Z 210 - MZ 2 4 0 Jîî I f c î M Microsemi Corp. FEATURES • M icrominiature package. • Voidless herm etically sealed glass package. • Triple layer passivat ion. • M e tallu rg ical^ bonded. • High perform ance characteristics.

Contextual Info: 1N5185 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time250n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)3

Contextual Info: 1N5189GP Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage500 t(rr) Max.(s) Rev.Rec. Time350n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)3.0

1N5150-5157

Abstract: kd 617 1N5149 1N5152 max current 1n4388
Contextual Info: 1N4386-88 and 1N5150-5157 Series High Power Multiplier Varactors Features • HIGH POWER ■ HERMETIC SEALS ■ LOW THERMAL RESISTANCE ■ HIGH EFFICIENCY Applications These series of high power silicon multiplier diodes are designed for efficient frequency conversion at output fre­

SD61A

Abstract: 1N5186 1N5186US 1N5187US 1N5188US 1N5190 1N5190US EIA-481-B D-5B layout 1N5189
Contextual Info: 1N5186US thru 1N5190US VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “fast recovery” rectifier diode series is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated

q292

Abstract: 100C 1N3595 1N3595-1 1N5194 1M3595-1 BKC International MIL-STD-202 METHOD 208 ir2150e
Contextual Info: B K C INTERNATIONAL 30E D • 117*Hfl3 D0G0350 1 « T ' 0 \ - 0 \ BKC IN TE RNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, M A 01841 TEL NO. 508 681-0392 EN GI N E E R I N G D A T A SHEET TYPE 1N5194 M E T A L L U R G I A L L Y BONDED, SI LICON PLANAR DIODE, DO UB LE PLUG CO NS TR UC TI ON

1N5186

Contextual Info: 1N5186 100 V 3 A fast recovery rectifier 6.52 Diodes High-Speed/Fast Recovery Diodes . Page 1 of 1 Enter Your Part # Home Part Number: 1N5186 Online Store 1N5186 Diodes 100 V 3 A fast recovery rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits

1N5187

Abstract: 1N5186 1N5188 1N5190
Contextual Info: 1N5186 1N5187 1N5188 1N5190 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 124, REV A SJ SX SV FAST RECOVERY RECTIFIERS MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING Peak Inverse Voltage PIV 1N5186 1N5187 1N5188 1N5190 Average DC Output Current (Io)

MT3018

Abstract: MT3013 MT3017 MT3019
Contextual Info: Stabistor Diodes Part Number MZ2360 MZ2361 1N4156 1N4157 1N4453 1N4829 1N4830 1N5179 MPD400 MPD400A MPD100 MPD200 MPD300 MPD100A MPD200A MPD300A MT3010 MT3011 MT3012 MT3013 MT3014 MT3015 MT3016 MT3017 MT3018 MT3019 MT3020 MT3021 Microsemi Division Scottsdale

1N5189

Abstract: HA 1342
Contextual Info: 1N5186 thru 1N5190 M¡erosemi Corp. y Tne & o de experts ! SANTA ANA, CA SCOTTSDALE, AZ For more inform ation call: 714 979-8220 FAST SWITCHING RECTIFIERS FEATURES • M IC R O M IN IA T U R E P A C K A G E • VO ID LE SS H E R M E T IC A LLY S E A L E D G L A S S P A C K A G E

cq 447

Abstract: diode CQ 745
Contextual Info: MOTOROLA Order th is docum ent by 1N5148/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5148 1N5148A Designed for electronic tuning and harmonic-generation applications, and provide solid-state reliability to replace mechanical tuning methods. • Guaranteed High-Frequency Q

Z219

Abstract: z234 Z836 z845 Z827 Z236 Z211B zener z8 Z824 IC Z809
Contextual Info: 1N5063 - 1N5117 M Z806 - M Z890, MZ 210 - MZ 2 4 0 M icm em i Corp. ^ The o<oce experts SANTA A N A, CA ! SC O T T SD A LE , A Z F o r m ore in fo rm a tio n call: 714 9 7 9 - 8 2 2 0 / 3-WATT GLASS ZENER DIODES FEATURES • • • • • • • M icrom iniature packag e.

1N5195UR

Abstract: CDLL5195 DO-213AA LL5195
Contextual Info: FEATURES 1N5195UR • 1N5195UR AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL5195, CDLL5195, & MLL5195 MAXIMUM RATINGS AT 25 °C