1N5142A Search Results

varactor 1N5144

Abstract: 1N5146 1N5139 1N5139A 1N5140 1N5140A 1N5141 1N5141A 1N5142 1N5142A
Contextual Info: GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A PART NUMBER 1N5139 ♦ 1N5139A 1N5140 ♦ 1N5140A 1N5141 ♦ 1N5141A 1N5142 ♦ 1N5142A 1N5143 ♦ 1N5143A 1N5144 ♦ 1N5144A 1N5145 ♦ 1N5145A 1N5146 ♦ 1N5146A 1N5147 ♦ 1N5147A

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A CAPACITANCE @ - 4 Vdc TYPE NUMBER ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ • INS 139 1N5139A 1N5140 1N5140A 1N5141 1N5141A 1N5142 1N5142A 1N5143

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A TYPE NUM BER 1N5139 » 1N5139A 1N5140 » 1N5140A 1N5141 » 1N5141A 1N5142 » 1N5142A 1N5143 » 1N5143A 1N5144 » 1N5144A 1N5145 » 1N5145A 1N5146

1N5142A

Contextual Info: 1N5142A TUNING VARACTOR DIODE DESCRIPTION: PACKAGE STYLE D0-204AA The ASI 1N5142A is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 °C TJ -65 °C to +175 °C TSTG -65 °C to +200 °C

varactor 1N5144

Abstract: 1N5141 1N5148A 1N5139 1N5139A 1N5140 1N5140A 1N5141A 1N5142 1N5142A
Contextual Info: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A TYPE NUMBER ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 1N5139 1N5139A 1N5140 1N5140A 1N5141 1N5141A 1N5142 1N5142A 1N5143 1N5143A 1N5144 1N5144A 1N5145 1N5145A 1N5146

1N5148A

Abstract: 1N5139A MIL-STD-750 METHOD 2036 5961-N072 jantx 1n5139a
Contextual Info: 44E D MIL SPECS • G00Q125 D032flhb fi ■ M I L S The documentation and process conversion measures necessary to comply with this revision shall be completed by 93 • ! INCH-POUNO I 2 June MIL-S-19500/383A 2 March 1993 SUPERSEDING MIL-S-19500/383 14 January 1969

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

stencil

Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

BC237

Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

bs170 replacement

Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)

transistor bc237 bc337

Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage

BC237

Abstract: MPS-A70 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage

transistor MPS5771

Abstract: BC237 bfw4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit

P2d MARKING CODE

Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage

WT transistor

Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc

2N5457 MOTOROLA

Abstract: 2N5457 equivalent BC237 transistor 2N5457
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc

BC237

Abstract: jedec package TO-226AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage

2n1613 equivalent

Abstract: BC237 diode l 0607
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection

bc373 equivalent

Abstract: BC372 equivalent BC237 JC 201 SC
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage VCES

2N5458

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.

2N16

Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD54DWT1 Preliminary Information Dual Schottky Barrier Diodes Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces