1N5142A Search Results

varactor 1N5144

Abstract: 1N5146 1N5139 1N5139A 1N5140 1N5140A 1N5141 1N5141A 1N5142 1N5142A
Contextual Info: GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A PART NUMBER 1N5139 ♦ 1N5139A 1N5140 ♦ 1N5140A 1N5141 ♦ 1N5141A 1N5142 ♦ 1N5142A 1N5143 ♦ 1N5143A 1N5144 ♦ 1N5144A 1N5145 ♦ 1N5145A 1N5146 ♦ 1N5146A 1N5147 ♦ 1N5147A

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A TYPE NUM BER 1N5139 » 1N5139A 1N5140 » 1N5140A 1N5141 » 1N5141A 1N5142 » 1N5142A 1N5143 » 1N5143A 1N5144 » 1N5144A 1N5145 » 1N5145A 1N5146

1N5142A

Contextual Info: 1N5142A TUNING VARACTOR DIODE DESCRIPTION: PACKAGE STYLE D0-204AA The ASI 1N5142A is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 °C TJ -65 °C to +175 °C TSTG -65 °C to +200 °C

varactor 1N5144

Abstract: 1N5141 1N5148A 1N5139 1N5139A 1N5140 1N5140A 1N5141A 1N5142 1N5142A
Contextual Info: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5139 - 1N5148 1N5139A - 1N5148A TYPE NUMBER ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 1N5139 1N5139A 1N5140 1N5140A 1N5141 1N5141A 1N5142 1N5142A 1N5143 1N5143A 1N5144 1N5144A 1N5145 1N5145A 1N5146

1N5148A

Abstract: 1N5139A MIL-STD-750 METHOD 2036 5961-N072 jantx 1n5139a
Contextual Info: 44E D MIL SPECS • G00Q125 D032flhb fi ■ M I L S The documentation and process conversion measures necessary to comply with this revision shall be completed by 93 • ! INCH-POUNO I 2 June MIL-S-19500/383A 2 March 1993 SUPERSEDING MIL-S-19500/383 14 January 1969

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

MMBF4856

Abstract: BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3906 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

1N5450A

Abstract: 1N5443A 1N5139 1N5139A 1N5140 1N5141 1N5142 1N5143 1N5144 1N5146
Contextual Info: Tuning Diodes The age o f electronic tuning and frequency control is here! Mechanical tuning systems are being outdated by the follow ing advantages of electronic tuning systems: • Mechanical linkage and contacts are eliminated. • Channel or station changes can easily be made by push button, continuous tuning, signal search or

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N5139 thru VOLTAGE VARIABLE CAPACITORS HIGH Q, HIGH VOLTAGE, LOW LEAKAGE ELECTRICAL CHARACTERISTICS f CHARACTERISTICS - 6.6 TO 47 PICOFARADS 1 25 °c unless otherw ise specified TEST CONDITIONS ALL TYPES

30223 varactor sod323

Abstract: Zener c10v KSV1402-1412 SMV30224 30223 sod 323 1N5455 sod-523 varactor diodes MV1662 varactor diode 1N5469 varactor 1N5144
Contextual Info: VARACTORS SMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, SMV1412 TMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, TMV1412 SMV20411, 20412, 20413, 20414, SMV20415 SMV20422, 20423, 20424, SMV20425 SMV20432, 20433, 20434, 20435, 20436, SMV20437

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

1N4811

Abstract: 1N4791
Contextual Info: 1N4786 - Varactor Diodes 1N4786 to 1N4815 Type Number 1N4786 1N4787 1N4788 1N4789 1N4790 1N4791 1N4792 1N4793 1N4794 1N4795 1N4796 1N4797 1N4798 1N4799 1N4800 1N4801 1N4802 1N4803 1N4804 1N4805 1N4806 1N4807 1N4808 1N4809 1N4810 1N4811 1N4812 1N4813 1N4814

BC237

Abstract: 2n2904 2n2905
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Unit Collector – Emitter Voltage VCEO –60 –80 Vdc

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

2n3819 replacement

Abstract: transistor TO-92 bc108 mps2907 replacement BC237 BC109C replacement BF245 bf245 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV409LT1 MV409 Silicon Tuning Diodes These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Devices

BC237

Abstract: BC108 plastic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3454XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 50 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 80 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–

transistor equivalent book 2N5401

Abstract: 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage Rating VCEO 120 150 Vdc Collector – Base Voltage

BC237

Abstract: diode H5
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. P–CHANNEL ENHANCEMENT–MODE