1K TRANSISTOR Search Results

ZTX601

Contextual Info: ZTX600 Not Recommended for New Design Please Use ZTX601 ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K

ZTX601

Abstract: ZTX600 DSA003770
Contextual Info: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*

52001HR

Abstract: IN3064 1K x 4 static ram ttl
Contextual Info: 52001 H 1K BIT 128 x 8 NVRAM Q 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit EEPROM Changes SRAM Cycle Time less than 300 ns Power-Failure Protection Unlimited Recall Cycles Memory Margining Capability

52212HR

Abstract: IN3064 256X4 ncr 400 256x4 static ram
Contextual Info: C 52212 R 1K BIT 2 5 6 x 4 NVRAM 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit E2PROM Changes SRAM Cycle Time less than 300 ns • • • • Power-Failure Protection Unlimited Recall Cycles

PCN0109

Abstract: EP1K100 1K transistor
Contextual Info: PROCESS CHANGE NOTIFICATION ACEX 1K DEVICE PROCESS IMPROVEMENT Altera & TSMC have jointly developed a more efficient process for the ACEX 1K products. The metallization layers on Altera’s ACEX 1K devices will be reduced in dimensions so as to accomplish an overall reduction in die size. Since all other key

Nov-27-1996

Contextual Info: BCR 571 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ Type Marking Ordering Code Pin Configuration BCR 571 XXs 1=B UPON INQUIRY Package 2=E 3=C SOT-23 Maximum Ratings

Q62702-C2355

Contextual Info: BCR 521 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ Type Marking Ordering Code Pin Configuration BCR 521 XVs 1=B Q62702-C2355 Package 2=E 3=C SOT-23 Maximum Ratings

but16

Abstract: MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 MJ423 BDX66 MOTOROLA MJ16028 BDX65B motorola MJ10006
Contextual Info: POWER TRANSISTORS — BIPOLAR METAL continued T0-204AA (FORMERLY TO-3) (continued) Resistive Switching lcCont Amps Max 8 VcEO (sus) Volts Min Device Type NPN PNP fr MH? Amp Max Max Amp Min (al 25°C Watts MJ900 BDX62 1k min 1k min 3 3 90 90 80 MJ1001 BDX63A

BCR571

Contextual Info: BCR571 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR571 XXs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR521

Contextual Info: BCR521 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

Contextual Info: BCR 521 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 521 XVs Pin Configuration 1=B 2=E Package 3=C

BCR521

Contextual Info: BCR521 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR571

Contextual Info: BCR571 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR571 XXs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

IC 571

Abstract: transistor d 571
Contextual Info: BCR 571 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 571 XXs Pin Configuration 1=B 2=E Package 3=C

Contextual Info: EMD30 PNP + NPN Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet Outline <For DTr1(PNP)> Parameter Value VCC 30V 200mA 1k 10k IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD30 (SC-107C) <For DTr2(NPN)> Parameter Value

BCR523U

Abstract: SC74
Contextual Info: BCR523U NPN Silicon Digital Transistor Array Target data sheet 5
Switching circuit, inverter, interface circuit, 4 6 driver circuit
Two galvanic internal isolated Transistors 3 with good matching in one package 2
Built in bias resistor (R1=1k, R2 =10k)

Contextual Info: EMD29 PNP + NPN Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet Outline <For DTr1(PNP)> Parameter Value VCC 12V 500mA 1k 10k IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD29 (SC-107C) <For DTr2(NPN)> Parameter Value

Contextual Info: ALA300/301 9Q-V0LT LINEAR ARRAYS Description The ALA300/301 Linear Arrays provide design engineers the means to obtain 90 V semi-custom integrated circuits. The single-module array ALA300 consists of 13 vertical NPN and 15 vertical PNP transistors, three 6 pF capacitors, and 1k

C62702-C2487

Contextual Info: BCR 523 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=1kΩ,R2=10kΩ Type Marking Ordering Code Pin Configuration BCR 523 XGs 1=B C62702-C2487 Package 2=E 3=C SOT-23 Maximum Ratings

C62702-C2488

Contextual Info: BCR 573 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=1kΩ,R2=10kΩ Type Marking Ordering Code Pin Configuration BCR 573 XHs 1=B C62702-C2488 Package 2=E 3=C SOT-23 Maximum Ratings

2n3904 TRANSISTOR REPLACEMENT

Abstract: 2n3904 replacement 2n3904 TRANSISTOR PNP ZTX788B 2N3904 TRANSISTOR REPLACEMENT table for transistor gate drive circuit for 2 transistor forward converter transistor 2n3904 1n4148 die 1N4148
Contextual Info: Design Note 30 Issue 1 February 1996 High Speed Turn-off Circuit for PNP Pass Transistors Cost-Effective replacement of P-Channel MOSFETs L2 ZTX788B Input +Bat Q3 150µH Q1 1K 2N3904 Figure 1 Active Turn-off Circuit for High Current, Low Vce sat PNP. 1N5820

Contextual Info: FM93C46A 1K-Bit Serial CMOS EEPROM MICROWIRE Synchronous Bus General Description Features The FM93C46A is 1024 bits of CMOS nonvolatile EEPROM (Electrically Erasable Programmable Read Only Memory) with MICROWIRE serial interface. FM93C46A can be configured for

Contextual Info: DTA113Z series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 1kΩ 10kΩ EMT3 UMT3 -50V l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

sot-23 Marking G1

Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0