CEG8208 Search Results

CEG8208 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CEG8208 Abstract: AIDM-25 S127 Contextual Info: CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 22mΩ @VGS = 4.5V. D RDS(ON) = 32mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). 1K G1 G2 1K High power and current handing capability.	Original	ceg8208 aidm-25 s127	PDF
CEP50N06 Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223	Original	o-251/to-252 o-220/to-263 ot-23 ot-223 +13ot-89 2928-8j o-220fm cep50n06 cep83a3 equivalent cep83a3 cef02n6a cep6355 fqpf8n60c equivalent cef04n6 equivalent cep63a3 cep20n06 cep76139	PDF

Catalog Datasheet

Type

Document Tags

PDF

CEG8208

Abstract: AIDM-25 S127
Contextual Info: CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 22mΩ @VGS = 4.5V. D RDS(ON) = 32mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). *1K G1 G2 *1K High power and current handing capability.

Original

ceg8208 aidm-25 s127

PDF

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

Original

o-251/to-252 o-220/to-263 ot-23 ot-223 +13

PDF