1J20 Search Results

J1CP

Abstract: 6CW 54
Contextual Info: 63 W Sing Is Output LED PowerSupply P L C - 6 0 • F O iU U ffc : ■ U rivtraal A C n p u l I F„ series 'an g* ■ Fii i- sa a t d i A3lie i i s t w 1i t i n m a sock slyleo l l.<; 1 3 1 1 ■ Btii ' -tn Qon lan eurr*n ba llin g cinsi : ■ A d ^ ia t M e o u if u i w t& B e and o m th ii le w

Contextual Info: 2 7 * CM * Ll. 0 0 NOTES oo — * * L u CO £ LD Coin 0 . 2 - (CUT OFF TAB LENGTH) .00 8 i_n Q o APPLICABLE HOUSING : 5559 SERIES 2. MATES WITH TERMINAL : 5 5 56 SERIES 5. (METRIC) VALUES SHOWN GOVERN OVER ENGLISH CONVERSION VALUES. ( 1.9) 4. GENERAU TOLERANCES OF ENGLISH CONVERSION VALUES : ±.0 08 INCH

18AV

Contextual Info: i Features Single Voltage for Read find Write: 2.7V to 3.6V Fast Read Access Time -1 SO ms internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time *10 seconds Byte-by-Byte Programming - 30 iis/Byte Typical Hardware Oats Protection

diode B14A

Abstract: B14A equivalent B14A B14A diode 207B MCF5307 asynchronous dram 1J20C
Contextual Info: 06/2000 Rev. 4.0 Semiconductor Products Sector MCF5307 Errata to MCF5307 Preface This document identiÞes implementation differences between particular versions of the MCF5307 processor and the description of the MCF5307 processor contained in the MCF5307 UserÕs Manual. Please

2H0250

Abstract: 1J0280 49LW080 2S0247
Contextual Info: PAGE 1 OF 6 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-49LW080 DATA HUB FLASH RELIABILITY DATA* - 121°C/15PSG PRESSURE POT TEST - 131°/85% RELATIVE HUMIDITY HAST TEST - EXTENDED TEMPERATURE CYCLE - 125°C DYNAMIC LIFETEST (PLASTIC) - 150°C RETENTION BAKE (PLASTIC)

Contextual Info: KM791001J CMOS SRAM 131,072 WORD x 9 Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 12.5, 15, 20ns Max. • Low Power Dissipation KM791001J-12: 200mA (Max.) KM791001J-15:180mA (Max.) KM791001J-20:150mA (Max.)

1j17

Abstract: Mil-T-23648 Thermistor NTC 20K Ohm 1J20 NTC thermistor 5k ohm Dale Electronics thermistors 1J26 1J112 1J15 1j29
Contextual Info: A COMPANY MODEL 1J NTC Therm istors OF TECHNO Ü h c o a te d b ik e , M a te ria l ‘J ’, 200Q to 3 0 ,0 0 0 Q APPLICATIONS Engineered for 1 Amplitude control • Temperature compensation 1Liquid level indication • Temperature measurement 1Flow measurement

TSOP 173 g

Abstract: 5H9602 6c9648 3b1326 5G9551 MIL-M-38535 6F9627 4c19 3C1660 atmel 906
Contextual Info: PAGE 1 OF 21 ATMEL COPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-27C040 CMOS EPROM RELIABILITY DATA* -125°C DYNAMIC OPERATING LIFE TEST -200°C RETENTION BAKE -PROGRAM AND ERASE -125°C OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC) -15 PSIG PRESSURE POT

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62981 Advance Information 64K x 4 Bit Fast Synchronous ParityRam The MCM62981 is a 262,144 bit synchronous static random access memory organized as 65,536 words of 4 bits, fabricated using Motorola's high-performance

diode B14A

Abstract: B14A equivalent B14A 1J20C B14A diode MCF5307 MCF5307ER asynchronous dram "Overflow detection"
Contextual Info: Freescale Semiconductor Device Errata MCF5307 Device Errata This document identifies implementation differences between particular versions of the MCF5307 processor and the description of the MCF5307 processor contained in the MCF5307 User’s Manual. Please check the WWW

1990 1142

Contextual Info: A COMPANY MODEL 1J NTC Thermistors OF TECHNO llhcoated b& c, Material ‘J ’, 200Q to 30,000Q APPLICATIONS Engineered for • Temperature compensation • Temperature measurement • Temperature control • Meter compensation • Voltage regulation • •

Contextual Info: R F MICRO DEVICES RF2302 Preliminary BROADBAND LINEAR VARIABLE GAIN AM PLIFIER T y p ic a l A p p lic a tio n s • CDMA Cellular/PCS and JCDMA Systems • Wireless Local Loop Systems • TDMA Cellular/PCS Systems • Wideband CDMA Systems • GSM Systems

schadow

Contextual Info: Features Series 388 Potentiometer 1/2 in. s q . , .5 W att • Sm all size - 1/2 in. square Series 389 Potentiometer • Stackable - up to 8 modules 1/2 in. s q ., 1 W att • Switches - rotary, push-pull, push-momentary, multi position and schadow. • Versatility - various shaft, bushings, terminal styles,

GTO catalogue

Abstract: SG1000EX23 toshiba gto
Contextual Info: 3. METHOD OF USE 3.1 METHOD OF USE FOR GTO 3.1.1 G a te Triggering Characteristics Supplying a gate cu rren t to such th y risto rs as GTO, etc., switches them from the off-state to the on-state. T h y ris to r gate characteristics include gate trigger voltage, gate trigger current, gate non-trigger voltage,

diode B14A

Abstract: B14A equivalent B14A diode B14A 1J20 1H55J 207B EDGESEL MCF5307 asynchronous dram
Contextual Info: 12/10/1999 Rev. 3.1 Semiconductor Products Sector MCF5307 Errata to MCF5307 Preface This document identiÞes implementation differences between particular versions of the MCF5307 processor and the description of the MCF5307 processor contained in the MCF5307 UserÕs Manual. Please

Contextual Info: \j¡¿ S ¡J MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ICMEM-CONI •Slender case sizes are lined up for laying down small places on PC board • Fo r electronic ballast circuits and other long life required applications •Endurance with ripple current: 105°C 8000 to 10000 hours

1J20

Contextual Info: TOSHIBA TC554101J-20/25/30 PRELIMINARY SILICON GATE CMOS 1,048,576 WORD x 4 BIT SEPARATE I/O CMOS STATIC RAM Description The TC554101J is a 4,194,304 bit high speed CMOS static random access memory organized as 1,048,576 words by 4 bits and operated from a single 5V supply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.

49LH002

Abstract: 49LH004 AT49LH004 175C AT49LH002 49LW080
Contextual Info: AT49LH002/004 Product Qualification Database Rev 1.1 September, 2003 Table of Contents Topics • AT49LH002/004 Features • Package Pin Configuration • Die Processing and Flash Memory Cell Structure • Device Physical Layout • Assembly Packaging Summary