1GT T 04 Search Results
1GT T 04 Price and Stock
onsemi MC74VHC1GT04DFT1G-QInverters Single Inverter, TTL Level |
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MC74VHC1GT04DFT1G-Q | 14,978 |
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TDK Corporation NTCWS4AF104HC1GT91BNTC Thermistors Bondable NTC,100kOhm/+-3%, 4050K |
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NTCWS4AF104HC1GT91B | 8,800 |
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onsemi MC74VHC1GT04DFT2GInverters Single Inverter, TTL Level |
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MC74VHC1GT04DFT2G | 8,532 |
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TDK Corporation NTCWS4AF104FC1GT91ANTC Thermistors Bondable NTC,100kOhm/+-1%, 4050K |
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NTCWS4AF104FC1GT91A | 8,000 |
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onsemi MC74VHC1GT04DBVT1G-QInverters Single Inverter, TTL Level |
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MC74VHC1GT04DBVT1G-Q | 5,975 |
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1GT T 04 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SCR 2N 689
Abstract: 2n 690
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OCR Scan |
2N691 TQ-209AE O-118) O-209AC O-208AD O-209AB O-208AC SCR 2N 689 2n 690 | |
CQ92Contextual Info: CENTRAL o.v,: ;• L: SEMICONDUCTOR o de ooocm? I v-f CQ92A CQ92B CQ92D CQ.92M feer- e^patpcto g MtuEG@5î&385@e&? (S r-E TRIAC 0.8 AMPS 100 T H R U 6 0 0 V O L T S Central Semiconductor Corp. 1 4 5 Adams Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC TO-92 CASE |
OCR Scan |
CQ92A CQ92B CQ92D 21o1s CQ92 | |
triac 100a
Abstract: CQ 521 100A TRIAC CQ92A CQ92B CQ92D CQ92M Triac VD-12V 041 NR
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OCR Scan |
CQ92A CQ92M CQ92B CQ92M triac 100a CQ 521 100A TRIAC CQ92D Triac VD-12V 041 NR | |
Contextual Info: ELECTRICAL CHARACTERISTICS: Insertion Loss: O.l-lOOMHz -l.OdB Max Return Loss 100 Ohms : l-30MHz -22dB Min 40MHz -20dB Min 50MHz -18dB Min 60-80MHz -12dB Min Differential to Common Mode Rejection: 30MHz -45dB Min 60MHz -40dB Min 100MHz -35dB Min Crosstalk: 30MHz -50dB TYP |
OCR Scan |
1-100MHz l-30MHz -22dB 40MHz -20dB 50MHz -18dB 60-80MHz -12dB 30MHz | |
1Bt 87
Abstract: P3420 p32100 P3412 polytron p35 P53-15L P38-12S 1BT 88 P3475 POLYTRON P33-48ST
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5Vdc-250Vdc 400Hz S-5/22 M-5/22 00/ea. 1Bt 87 P3420 p32100 P3412 polytron p35 P53-15L P38-12S 1BT 88 P3475 POLYTRON P33-48ST | |
SF250U27
Abstract: SF250L27 SF250Q27 thyristor tt 250 thyristor sf250l27
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OCR Scan |
SF250 00-1600V 00A///s 00V//is SF250L27 SF250Q27 SF250R27 SF250U27 SF250N27 thyristor tt 250 thyristor sf250l27 | |
Contextual Info: CENTRAL SEMICONDUCTOR 1 • . . n a “n t . 3 oqdd3 5 t CS92 SERIES v e -tl._ SILICON CONTROLLED RECTIFIER 0.8 AMPS £ . . i i^?efiSä5G&/'Gr €;GLVj. € e B B £ ü ’CSS §eRLi.ce@BieaK;eß@[i5e @ sp . 100 THRU 800 VOLTS JEDEC T0-92 CASE Central |
OCR Scan |
T0-92 CS92A 100i2, 100fi, 30TYP | |
Contextual Info: Si Iicon Controlled IRectifiers 2 N 794 y 80^k 2 K /\1-371 Dim Inches Minimum A B C D E F G H J K M N P R S T U TO-208AD TO-83 Note 1: 1/2-20 UNF-3A Note 2: Full thread within 2 1/2 threads Microsemi Catalog Number 2N1794 2N1795 2N1796 2N1797 2N1798 2N1799 |
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O-208AD 2N1794 2N1795 2N1796 2N1797 2N1798 2N1799 2N1800 2N1801 2N1802 | |
2N1794-1804
Abstract: 6Cp 80 624A2 Microsemi Catalog 2N1795 2N1796 2N1797 2N1798 2N1799 2N4371
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OCR Scan |
O-208AD 2N4371 2N1794 2N4372 2N1795 2N1796 2N1797 2N4373 2N1798 2N1799 2N1794-1804 6Cp 80 624A2 Microsemi Catalog 2N1795 2N1796 2N1798 | |
PO32
Abstract: 33J6 PH1600
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OCR Scan |
PH1600-32 F--06 PH1600-32 1600MHZ 470pF 015uF F--07 PO32 33J6 PH1600 | |
AP4512Contextual Info: FULL COLOR D ISPLAY UNITS 1 2 8 < j > 3 X m 6 m 4 m 3 2 m X 1 6 D o t s L N P 7 7 3 1 3 @@ ©©<30 ©©©©©©©©©©©oôôôô©©©©©©©^©©©-^^ @ ©© ©© ©© ©© ©© O© ©© O O ©Q ©O ©O O333.333 3O{333Oi © © ©©©©©©©©©O ©O |
OCR Scan |
OOGOOOOO3335 i3S05E AP4512 | |
0230200L
Abstract: 0230300L 0230400L 0230500L 0230600L
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OCR Scan |
0230200L 0230300L 0230400L 0230500L 0230600L 00V//JS | |
n980chContextual Info: WESTCODE SEMICONDUCTORS S r- Capsule Phase Control Thyristor Consists of a diffused silicon element mounted in an hermetic ceramic cold welded capsule, and features an amplifying gate. Available in industry standard housing and thin housings. Ratings Unless otherwise indicated Tj = 125°C |
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300mm T70TTS5 D00277Ã n980ch | |
2EOU
Abstract: DTA05 DTA05C RLA-20 H29TA
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OCR Scan |
N799D DTA05 DTAO50 DTA05C DTA05Ã 2EOU DTA05 RLA-20 H29TA | |
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in5626
Abstract: 1G10 1N5059 1N5060 1N5061 1N5062 2G10 5C1000 5C400 5C600
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OCR Scan |
5CT00 5C400 5C600 5C800 5C1000 in5626 1G10 1N5059 1N5060 1N5061 1N5062 2G10 5C400 | |
ac05d
Abstract: AC05DJM AC05DJM-Z AC05FJM AC05FJM-Z AC05F
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OCR Scan |
rAC05DJM, AC05DJM-Z AC05FJM, AC05FJM-Z AC05r UL94V-0) OEi-620) AC05DJM, ac05d AC05DJM AC05FJM AC05FJM-Z AC05F | |
Contextual Info: SAMSUNG ELECTRONICS INC b?E j> m Tibmns KMM5364000B/BG o d i s i ö s sb4 • s m g k DRAM MODULES 4 M x 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tR A C tC A C t f lC KMM5364000B-6 60ns 15ns |
OCR Scan |
KMM5364000B/BG KMM5364000B-6 110ns KMM5364000B-7 130ns KMM5364000B-8 150ns cycles/16ms KMM5364000B bitsx36 | |
n06hd
Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
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TND310 TND310/D n06hd N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220 | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 | |
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p | |
marking code p07 sot89
Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
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OCR Scan |
2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
Contextual Info: SSI 32R2200R/2201R s w m s if tfa n +5V, 4-, 6-Channel Thin Film Read/Write Device s ’ A TDK Group/Company Target Specification October 1993 FEATURES DESCRIPTION The SSI 32R2200R/2201R are BiCMOS monolithic integrated circuits designed for use with two-terminal |
OCR Scan |
32R2200R/2201R 32R2200R/2201R 2200R/2201R 32R2200/ 000150b | |
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m |