1F4N Search Results

marking IAY

Abstract: TC-2126
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN 1F4N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Resistors Built-in TYPE in millimeters 2.8 ±0.2 O—W V 0 .65:8;U 1.5 R t = 2 2 k£2 Ri R2 = 4 7 kü

1f4n

Contextual Info: SILICO N TR A N SISTO R FAI F4N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TY PE NPN TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS in rrH llm eters • Resistors Built-in T Y P E R i = 22 kî2 R2 = 4 7 k iî • Complementary to FN 1F4N A B S O L U T E M A XIM U M R A T IN G S

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR / ELECTRON DEVICE G N 1F4N M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FE A TU R ES PACK AG E D IM E N S IO N S • Resistors B u ilt-in TYPE m m illim e te rs R t = 22 k i i R2 = 4 7 k H • C o m plem entary to GA1 F4N

JT MARKING

Abstract: T108 TC-6249 RI-27
Contextual Info: SEC Ì Ì T / \ -y • 5 7 ^ Com pound Transistor t À 1F4N fitt ï P N P JE i; □ > ft ftïïm o ^ M T * i î : mm X i £ # C £ l*3j ^ L T ^ i t o (R i= 2 7 k û , R 2= 47 k Û ) 1F4N i 3 >7°'J / > 9 ]) X-fëmx-Z t t 3 ê* J il* :Ê fê (Ta = 25 °C)

TXAL 228 B

Abstract: 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243
Contextual Info: QUICK REFERENCE GUIDE 2 ELECTRICAL SPECIFICATION LIST 2 PIN ULTRA SUPER MINI MOLD • Noise Clipping Diode fMNCD[ JC Series) M axim am R atings5 Electrical Characteristics {T a = 2 5 ‘CJ O a = 2 5 ‘C ì Type No. Application V b r (V) P tm W ) M IN . S M A X

K1273

Abstract: K2158 1A4M K1399 K2111 K680A a1464 D82C J356 k1587
Contextual Info: QUICK REFERENCE GUIDE QUICK REFERENCE GUIDE 1 QUICK REFERENCE TABLE 3 PIN MINI MOLD □ Switching Diodes I Q UICK REFERENCE GUIDE_ Qß ! 3 PIN MINI MOLD SC-59 . _ □ Transistors and FETs v c e o 15 20 20 2S C 2223 2S A1462 40 30

Contextual Info: DRAWING No.: Customer Information Sheet M 8 3 - L F T IF 4 N X X - 0000-000 SHEET 2 OF 2 IF IN DOUBT - ASK • H i n NOT TO SCALE THIRD ANGLE PROJECTION ALL DIMENSIONS IN mm 2.00 0 0 .5 0 SECTION TYP Y-Y 2.00 I .50 SPECIFICATIONS: MATERIAL: MOULDING = G L A S S - F I L L E D PPS, U L 9 4 V - 0 , BLACK

HHB8

Contextual Info: 7— / v fc S * S ' — h* m Com pound Transistor i? T / \ f 7 4# BAI F4N ! mm ★ » o s<4 r x t s t / t £ i*ui l x ^ £ i"c Ri = 22 kfì, R2= 47 k£2) o 1F4N t ^ > "7° ij / > 9 'J T'féffl T"^ £ i " t Ì 6 Ì Ì * * S # ( T a = 25 °C) il -?- aE #

K68A

Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Contextual Info: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E

X328 transistor

Abstract: scx6206 transistor x328 SCX6218 SCX6225 MEA 2901 x328 SCX6244 scx6232 SM8250A
Contextual Info: WjWM National /¡/m Semiconductor mUm Corporation Description of Gate Arrays and Standard Cells National Semiconductor’s CMOS Gate Arrays and Standard Cells utilize a dual layer metal technology microCMOS to achieve operating speeds similar to Schottky-TTL integrat­

Contextual Info: Customer Information Sheet SHEET 2 OF 2 DRAWING No.: M 8 3 - L F T I F 4 N X X -0000-000 I 1— IF IN DOUBT - ASK | g | NOT TO SCALE | THIRD ANGLE PROJECTION ALL DIMENSIONS IN mm 2.00 00.50 SECTION — TYP Y-Y *7~ \ 2.00 NOTES: I. R E C O M M E N D E D PCB

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905