1F T 60 Search Results

Oerlikon

Abstract: SM25 SM40 SM55 SM70 v15 1800 1
Contextual Info: ADVANI OERLIKON/ SEMICOND 3bE D B DSblbMfi 0DD0030 T H S E L I _ | 5>X ô -t^O\-o\ Jl RELIABLE POWER SEMICONDUCTOR RECTIFIERS TYPE V RSM ' rrm 1F AV 1F(DC) 1 FRM *FSM l2t (Contd.) Tvj ^case ^stg VOLTS VOLTS mA AMP AMP AMP AMP AMP2 SEC °C °C "C 100

BYISTOR

Contextual Info: IT r j ADVANCED POWER T ec h n o lo g y RP B YI-1/1F/1T/1Z BYISTORS FO R LINEAR POWER AMPLIFIERS GENERAL DESCRIPTION The BYI-1/1F/1T/1Z is a semiconductor device specifically designed for use in linear amplifier bias circuitry. The byistor acts as a low impedance D.C.

HFA45HI60C

Abstract: hexfred transistor k31 ANSI 45 rectifier
Contextual Info: PD-2.380 International ÜH Rectifier HEXFRED Provisional Data Sheet HFA45HI60C u l t r a f a s t , s o f t RECOVERY DIODE Units Characteristics Vbr per leg 600 600V, 45A Features: Major Ratings and Characteristics V 1F(AV) 45' A t rr (per leg) 75 ns Q rr (per leg)

Contextual Info: WSmftWX HWBBM’* -!'* $ $ £ ! Surface Mounting Device Single Diode Rectifier Diode •*WfN-äsH OUTLINE DIMENSIONS Package : 1F D1F60A + < Unit : mm -N - n y —YT—9 /Cathode mark 4.4±0-3 600V 1.2 A 3 ‘I "T 1 t 3 in Lo t- h' t c 4 v GD ! O CM 11 111 ’

Contextual Info: Kingbright SUPER FLUX LED LAMPS W7676C W 7676Cxxx04 - J , T , T * v 1f Part No. W7676CSURC W7676CSURC/E W7676CSEC/E W7676CSEC/G W7676CSEC/H W7676CSYC W7676CSYC/H W7676CVGC/H Material InGaAlP X D nm 628 C Lens Type water clear InGaAlP 630 water clear InGaAlP

Contextual Info: P I H i@ y T 1F [ ^ 1 ¥ D 0 in te l 2-MBIT 128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at

H R C M F 3B

Contextual Info: 6 THIS DR A WI N G COPYRI GHT IS UNPUBL IS HED. 19 RELEASED BY AMP INCORPORATED. ALL F OR P U B L I C A T I O N RIGHTS RESERVED. 5 F E ROW B A 3 5 D PI 1A 3A 1B 2B GNO 1C 1B 1E 1F 1G 1F 3B NC NC NC 1C 1B 1E 2B 1 1 JUN97 15:13:18 u s O I 5872 4B BB 4B BB

Contextual Info: ASSMANN UNI-DIP@ Buchsen- und Adapterleisten Buchsen- und Adapterleisten Socket and terminal strips Extrem niedrige Bauhöhe Low profile AW 127 AG AW 127 LP 50,8 50,8 - 1.81,2 , i j 81,2) 2,5 ÏÏT T T T T 0 1,35 0 0,51 - 2.41 2.42 0,61 1f 0 1.32 — J AP 483

Contextual Info: [p[F3@ U S T [PIF3EWDEW 88F51FC CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER 32 KBYTES USER PROGRAMMABLE FLASH MEMORY 88 F 5 1F C — 3.5 M H z to 12 M H z, V CC = 5V ± 10% 88 F 5 1F C -1— 3.5 M H z to 16 M H z, V CC = 5 V + 10% • 32K O n-C hip Flash P ro g ram M em o ry

dell precision front panel cable

Abstract: AD2022 ad2009 220vac to 12vdc circuit diagram AC261S printer DELL power supply
Contextual Info: -.- . . « - -_c- .- -. LillIDEVICES <~~:\:~;~: '-'-"" ~-. 3~ Digit ANALOG . .-.-.- LinePoweredFunctional DPM . ~ >,~ .;%:~l;~1f~ l ~:~~~;~~l~C;.~~: ?;~}+]ltEp.D 2022. FEATURES Space and Power for Large 3~" x 4" 95 x 102mm) Custom

Contextual Info: ORDERING INFORMATION To order a standard power divider with specific parameters, please include the following: PD02-02002650 1F S Model Number Specify from tables on previous page. C o n n e c t o r s * -SMA . 1

V7-1E19E9

Contextual Info: 1 REV 3 4 FO-50360-L CW-B5997 330 . I 60 t .40 * . 16 5 i t t O C H A N G E D BY CSL 1F E B 0 3 TSG I9JA N 06 9 DOCUMENT 207406 00 18264 CHECK SAV RJ 25 0 ± .003 \ -PLASTIC PLUNGER OBSOLETE ELECTRICAL _ C H A R A C T E R I S T I C S _

IN1183A

Abstract: IN1183 1N1183A Series peak inverse voltage in3766 BYS50 1N2130A in3768 1N1187 byss0 BY550-1000
Contextual Info: I C SEMICONDUCTOR T 0 0 2 M 7 T O O O O O l l 013 • INC kflE D EICS Silicon rectifier diodes. 5 Amps, to 60 Amps. V A V 3 t T C ^RRM V rm (V) (A) VsM (A) M ax. F orw ard V oltage D rop at T a = 25 °C V F at 1F(AV) (V) (A) 60 60 60 60 60 60 60 300 300

Contextual Info: Bridge Diodes Schottky Barrier Electrical Characteristics ( T a = 2 5 t) Absolute Maximuin Ratings x. Parameter Type No. x. RBA-404B RBA-406B RBA-1004B & If s m V rm (V) 1f ( a w (A ) (A) 50H z With Heatsink Hdf-Cfde&newave 4.0 40 Vf (V) max per element

Contextual Info: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BC847 SMALL SIGNAL NPN TRANSISTORS Type M arking B C 847B 1F . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL GENERAL PURPOSE . PNP COMPLEMENT IS BC857

Contextual Info: OPERATING CHARACTERIS1n c s A T 25° C AM BIENT LUMINOUS DIALIGHT PART NUMBER LED TEST COLOR CONDITION 597-3231 - 202F A 1 1nGaP 1F INTENSITY FORWARD VOLTAGE V ( me d ) REVERSE DOMINANT PEAK VIEWING CURRENT WAVELENGTH WAVELENGTH ANGLE (uA) ( n m) ( n m)

Contextual Info: MMBT5550 NPN General Purpose Amplifier • This device is designed for generalpurpose high voltage amplifiers and gas discharge display drivers. 3 2 SOT-23 1 Marking: 1F 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * T a Symbol VCEO = 25°C unless otherwise noted

DDD4425

Abstract: DDD4432 DDD443D
Contextual Info: SPEC 1F I C A T I O N DEVICE NAME TTPE NAME SPEC. No. G DATE B T Jun.-25-1998 r# F u This \ ; DATE 0RAW N¡ / U NAME j i Specification E is l e subject c t to r i c change C o . , Ltd. without notice. APPROVED Fuji Electric CoJLtd. K .' íÍ ' u a ^ i^li.

DLTS-12

Abstract: DLTS-12A DLTS-13C DLTS-17 DLTS-17A DLTS-19C DLTS-24 DLTS-24A DLTS-30 DLTS-30C
Contextual Info: Mierosem i Corp. T/ip ó>o<1f Pipen?. S A N T A A N A , CA / SCOTTSDALE, A Z DLTSthru DLTS F o r m o re in fo rm a tio n call: 602 941-6300 FEA TU RES This series of TAZ devices is packaged in a ceramic, dual-in-line, hermetically sealed package. These components offer 15 protective devices; unidirectional

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT REV. LDM —0 8 6 8 8 M PIN 10 P IN 9 oooooooo oooooooo oooooooo oooooooo E L E C T R O -O P T IC A L CHAR ACTERISTICS Ta = 2 5 T PARAMETER MIN TYP PEAK WAVELENGTH FORWARD VOLTAGE P IN 2 0 ,2 0 8 2.2 1f = 1 OmA RED FACE COLOR:

Contextual Info: Customer Information Sheet DRAWING N o . : S HE E T 2 OF 2 M 8 3 - L F T 1F 4 N 3 6 -0000- 000 | IF IN DOUBT - ASK | c | NOT TO SCAL E | T HI RD ANGL E P R O J E C T I O N | A L L D I MENSI ONS IN mm •00.50 2. 00 TYP 2. 00 SECTION Y-Y 0 I . 50 TYP T T

Contextual Info: SH ÏI7-VW •> 3 h + A U T Î f - f J t - K 7s S w f t c e M o u M in a t e v t a S c h o t t k y B a r r ie r D io d e Single Diode O U TLIN E D IM EN SIO N S D1FS6 U n it : mm Case : 1F W e ig h t : 0 .0 6 g °— * V ••- F •? ■■ï 60V 1.1 A

CSA09247

Abstract: M24308/25-9 M24308/4-1F M24308/25 m24308/25-9 data sheet M24308/4-1F DATA SHEET M24308 M24308/4 77A108890P00 CSA09147
Contextual Info: FEATURES MODEL NO. CSA09247 1215 - 1400 MHz Transmit / Receive / LNA Assembly 28 dB Gain Low Noise Figure 2.0 dB MFA Combination T/R - Switch / LNA CUSTOMER PART NUMBER 7.50 7.000 +.005 .204 -.003 DIA THRU 4 PLACES M24308/4-1F WITH 2 TWO JACKSCREWS M24308/25-9

AEG - AKTIENGESELLSCHAFT

Abstract: t31f aeg t31f aeg t31f
Contextual Info: A E G -A KTIE N G ES ELLSC H AFT fllC D • 0021413 GQQ5fl04 7 ■ AEGG T3 1F Typenreihe/Type range_ T 3 1 F _ 2 0 0 * 400 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte M axim um perm issible values