1DQ15 Search Results

BGA-48P-M13

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

Contextual Info: WM Y32K36V-XTQX WHITE /MICROELECTRONICS a 32Kx36 M onolithic Flow Through Synchronous SRAM advanced* FEATURES • Fast Access Times of 10 and 11 ns ■ ■ Fast O E Access Time of 7ns ■ W rite Pass-through Capability ■ Packaging: ■ Clock Controlled, Registered, Address, Data and Control

U4B R950

Abstract: PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009
Contextual Info: MPC8560 PowerQUICC III Torridon User’s Guide MPC8560UG Rev. 0.1 12/2004 PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE How to Reach Us: Home Page: www.freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370

BGA-48P-M13

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

KM416S4030A

Abstract: km416s4031 KM416S4030AT-G
Contextual Info: K M 4 16 S 4 0 3 1 AT SDRAM ELECTRONICS 1 M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.

Contextual Info: 256K x 16, 512K x 8 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. M T28F4°0B1 FLASH MEMORY S m artV o ltag e FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks Four m ain m em ory blocks

actron ab

Abstract: 11a18 CHN 949 VF800
Contextual Info: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention

Contextual Info: Advance information •■ AS29LL800 II 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features •O rganization: 1M x 8 / 5 1 2 K x 16 • Sector architecture - O ne 16K; tw o 8K; one 32K; and fifteen 64K byte sectors - O ne 8K; tw o 4K; one 16K; and fifteen 32K w o rd sectors

Contextual Info: H igh p erfo rm an ce 512Kx8/256Kxl6 5V CMOS Flash EEPROM U A S 29F 400 A 512Kx8/256Kx 16 CMOS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 5 1 2 K X 8 o r 2 5 6 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a r c h it e c tu r e

Contextual Info: PRELIMINARY MICRON MT28F200 128K x 16, 256K x 8 FLASH MEMORY » FLASH MEMORY 128K x 16, 256K x 8 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16K B/8K -w ord boot block (protected) T w o 8KB/4K-w ord param eter blocks Two m ain m em ory blocks

U07K

Abstract: 741i REF04 KM416S4020AT-12
Contextual Info: K M 4 16 S 4 0 2 1 A T SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

Contextual Info: 8Mb SMART 5 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. FLASH MEMORY 5V Only, Dual Supply Smart 5 FEATURES • Eleven erase blocks: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks Eight m ain m em ory blocks • Sm art 5 technology (B5):

29LVS00

Abstract: 29LV800 AS29 AS29LV800 LI400
Contextual Info: Advance informatio AS29LV800 3V lM x 8/512Kx 16 CMOS Flash EEPROM Features • Organization: 1Mx 8/ 5 1 2 K x l6 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture— T top or B (bottom)

56-PIN

Abstract: LH28F320S3TD-L10 TSOP056-P-1420
Contextual Info: SHARP LH28F320S3TD-L10 LH28F320S3TD-L10 32 M-bit 2 MB x 8/1 MB x 16 x 2-Bank Smart 3 Dual Work Flash Memory DESCRIPTION The LH28F320S3TD-L10 Dual W ork flash memory • Scalable Command Set (SCS) with Smart 3 technology is a high-density, low-cost, • High performance read access time

C0000-H

Abstract: z256
Contextual Info: MBM29LV160T-80/-90/-12 MBM29LV160B-80/-90/-12 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

Contextual Info: O K I Semiconductor MSM5416262 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416262 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

J 6920 A

Abstract: DS05 FPT-48P-M19 FPT-48P-M20 PL160T
Contextual Info: MBM29PL160TD/160BD-75/90 データシート 生産終息品 MBM29PL160TD/160BD -75/90 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及

S772

Abstract: tms44165
Contextual Info: TMS44165, TMS44165P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMHS166C - AUGUST 1992 - REVISED JUNE 1995 DZ PACKAGE TOP VIEW This data sheet is applicable to all TMS44165/Ps symbolized with Revision “D" and subsequent revisions as described on page 4-92.

KM416S4020

Abstract: KM416S4020AT-G
Contextual Info: KM416S4020AT SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

MBM29DL640E90TN

Abstract: DS05 FPT-48P-M19 FPT-48P-M20 MBM29DL640E MBM29DL640E12 MBM29DL640E80 MBM29DL640E90 9012a3 SA113C
Contextual Info: MBM29DL640E80/90/12 データシート 生産終息品 80/90/12 MBM29DL640E Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及

MBM29F160BE70TN

Abstract: MBM29F160TE-70TN MBM29F160TE70TN DS05 FPT-48P-M19 FPT-48P-M20 MBM29F160BE-70TN MBM29F160BE MBM29F160 MBM29F160BE-90TN
Contextual Info: スパンションフラッシュメモリ データシート 2003 年 9 月 本ドキュメントは , 現在アドバンスト・マイクロ・デバイス社と富士通株式会社とが提供しているスパンショ ンブランドのフラッシュメモリ製品の仕様を規定しています。ドキュメントには元来の仕様開発元が記載され

FPT-48P-M19

Abstract: FPT-48P-M20 DS05
Contextual Info: MBM29LV160T/160B-80/ 90/ 12 データシート 生産終息品 MBM29LV160T/160B -80/ 90/ 12 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29LV160B MBM29LV160T
Contextual Info: MBM29LV160T-80/-90/-12 / MBM29LV160B -80/-90/-12 -80/-90/-12 80/-90/-12 Data Sheet Retired Product MBM29LV160T Cover Sheet /MBM29LV160B - This product has been retired and is not recommended for new designs. Availability of this document is retained for reference