1DQ0 Search Results

3RK2400-1FQ03-0AA3

Abstract: 3RK1400 3RK1400-1DQ01-0AA3 3RK1400-1DQ00-0AA3 3RK1904-2AB01 3RK1100-1CQ00-0AA3 3RK1701-2KB05-0AA3 3RK1200-0CQ00-0AA3 siemens 3rk1400 3RK1400-1MQ00-0AA3
Contextual Info: Kompaktmodul K60 Compact Module K60 Module compact K60 Módulo compacto K60 Modulo compatto K60 3RK1100-1CQ00-0AA3 K60 4O 3RK1200-0CQ00-0AA3 (K60 4I) 3RK1400-1BQ00-0AA3 (K60 2I/2O) 3RK1400-1DQ00-0AA3 (K60 4I/4O) 3RK1400-1DQ01-0AA3 (K60 4I/4O) 3RK1400-1DQ02-0AA3 (K60 4I/4O)

Contextual Info: SCHOTTKY BARRIER DIODE 310Q03 1DQ04 3.3A/30— 40A FEATURES ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available MAXIMUM R A T IN G S Voltage Rating " \ type ♦ 3 1DQ0 3 1DQ04

21dq

Contextual Info: DE 1 4 f l 5 5 4 5 5 4855452 0D05041 5 | ~ 55C INTERNATIONAL RECTIFIER 05 04 1 D Data Sheet No. PD-2 .0 5 3 A T - INTERNATIONAL RECTIFIER o 3 - 3 IÖ R 11DQ, S1DQ AND 31DQ SERIES 1 to 3 Amp Schottky Barrier Rectifiers Description/Features Major Ratings and Characteristics

1DQ06

Abstract: M25-7 voltage regulator pin configuration
Contextual Info: LM2574 L 52kHz Simple 0.5A Buck Voltage Regulator General Description Features The LM2574 family is a series of easy to use fixed and adjustable switching voltage regulators. The LM2574 con­ tains all of the active circuitry necessary to construct a stepdown buck switching regulator and requires a minimum

AN1122

Abstract: M29F016B
Contextual Info: M29F016B 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME - 8 jas by Byte typical ■ 32 UNIFORM 64 Kbyte MEMORY BLOCKS

U4B R950

Abstract: PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009
Contextual Info: MPC8560 PowerQUICC III Torridon User’s Guide MPC8560UG Rev. 0.1 12/2004 PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE How to Reach Us: Home Page: www.freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370

actron ab

Abstract: 11a18 CHN 949 VF800
Contextual Info: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention

Contextual Info: SIEMENS 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module HYS64 72 V4200GU-8/-10 HYS64(72)V8220GU-8/-10 PC66 & PC100 168 pin unbuffered DIMM Modules Prelim inary Information • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules

1dq04

Contextual Info: DATA S H E E T J U L Y 1998 Revision 1.0 LXT334 Quad Short-Haul Transceiver with Clock Recovery General Description The LXT334 is a quad, short-haul, PCM transceiver for 2.048 MHz or 1.544 MHz transmission systems. Its low impedance transmit output drivers provide constant line

3l08

Abstract: hy538
Contextual Info: •HYUNDAI / H Y 6 3 8 1 128KX 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techni­

FBU4K

Abstract: FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406
Contextual Info: RECTIFIER INDEX C R O SS REFERENCE LITE-ON MOTOROLA Gl P/N P/N P/N 1 N4001 1N 4001 1N4001G IR P/N FU JI SGS-THOMSON VARO FAGOR P/N P/N P/N P/N 1N4001 1N4001 1N4001G L 126 1N4002 1N4002G 1 N4002 10D1 ERB12-1 1N4001F 148 1N4002 150 126 1 N 4 0 0 2 GP 1N4002GL

RL-1283-680-43

Abstract: 11JQ06
Contextual Info: ß Semiconductor LM2574/LM2574HV SIMPLE SWITCHER 0.5A Step-Down Voltage Regulator Features • 3.3V, 5V, 12V, 15V, and adjustable output versions ■ Adjustable version output voltage range, 1.23V to 37V (57V fo r HV version ± 4 % m ax over line and load

ALC100

Abstract: ST CD C226 VM036 BK1606 COD-51 LS-120 WD62 L420 eef 1208 PA6 GF 10 MD10
Contextual Info: D i a g r a m s M a in b o a r d G T LH W 3 b TLH A 6 T LH W S G TL H i« G T L H tf? GT L HA#6 \ U . tq : 02: I4 n : « ; K1 . ji ; s . m : G r. h i; » : pi . H . r ; E l, 0« . IB . 0) E2, IS . w . f t , ci 83 . A3 02, 2 1; Ai AS 84, C5 , g t lh w s

F16 - 100 HIP

Abstract: 58F1001
Contextual Info: TENTATIVE DATA TC58F1001P/F 131,072WORD x 8BIT CMOS FLASH E2 PROM DESCRIPTION T he T C 5 8 F 1 0 0 1 P /F is a 1,048,576 bits, F la sh E lectrically E ra sa b le a n d P ro g ram m ab le R ead O nly M em ory FE 2PROM organized as 131,072 w ords by 8 bits. T he T C 5 8 F 1 0 0 1 P /F is fab ricated by

2574 adj

Abstract: LM 2574 HV ADj 2574adj 1DQ06 P5915
Contextual Info: Semiconductor LM2574/LM2574HV SIMPLE SWITCHER 0.5A Step-Down Voltage Regulator Features • 3.3V, 5V, 12V, 15V, and adjustable output versions ■ Adjustable version output voltage range, 1.23V to 37V 57V for HV version ±4% max over line and load conditions

Contextual Info: 1 MEG x 16 EDO DRAM DRAM M T4LC 1M 16E5 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • JE D E C - a n d in d u stry -sta n d a rd x l 6 tim in g , fu n ctio n s,

BL01RN1-A62T5

Abstract: R-62
Contextual Info: BL01/02/Q3 Series • PART NUMBERING iPlease specify the part number when orcteringj Ex. B L 02R N 2 -R 6 2 T4 BLQ1RN1 — A62 ITS j B L 01R N 1 -A 6 3 T6 1Code D escrip tio n T4 Radiai Type ^H=1 S.Smm * IS Axial Type Tape Witilh &2mm TS Aaial Type Tape Wdih ZCnur*

HY57V648010

Abstract: HY57V648011 HY57V648020 HY57V648021 HY57V658010 HY57V658011 HY57V658020
Contextual Info: u v i i u i i i • 8Mx8 bit Synchronous DRAM Series I J N D f l I HY57V648010/ HY57V648020/ HY57V658010/ HY57V658020 _HY57V648011/ HY57V648021/ HY57V658011/ HY57V658021 PRELIMINARY DESCRIPTION HY57V648010 4Mbit x 2bank x 8 I/O, LVTTL

DV 3287 C

Abstract: DV 3287 b
Contextual Info: blE D MICRO POW ER S Y S T E M S INC • b G cì7 4 4 4 G Q G 4 7 S 4 1 *H « M P S „ ,m„ r -5 \- - 2 ^ . M MP8791 C M O S 12-Bit High Speed Analog-to-Digital Converter with Parallel Logic Interface Port M icro Power System s FEATURES APPLICATIONS 12-Bit ADC with DNL = +1 LSB, INL = +2 LSB

Contextual Info: 21Ü 2 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH021_ Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:

Contextual Info: KM418C256B/B L/BLL CMOS DRAM 256K X 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256B/BL7BLL is a CMOS high speed 2 6 2,14 4 b it x 18 D ynam ic R andom A cce ss Memory. Its design is optimized for high performance

PA28F016S5-85

Abstract: 29059
Contextual Info: intei BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S5, 28F008SS, 28F016S5 Includes Commercial and Extended Temperature Specifications • SmartVoltage Technology — Smart 5 Flash: S V Vcc and 5 V or 12 V V p p h High-Performance — 85 ns Read Access Time

Contextual Info: KBK15A THRU KBK1 5M _ SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNAHONAL ELECTRONS LTD, TFCHM CAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 15 Amperes FEATURES ' Low leakago

MCM6270

Abstract: MCM6270J25
Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M CM 6270 4K x 4 Bit Static RAM The MCM6270 is a 16,384-bit static random access memory organized as 4096 words of 4 bits, fabricated using Motorola's high-performance silicon-gate CMOS technology. Static design eliminates the need fo r external clocks or tim ing strobes, while CMOS cir­