Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1AV SERIES Search Results

    1AV SERIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    11C90DM
    Rochester Electronics LLC 11C90 - Prescaler, ECL Series PDF Buy
    MD8212/B
    Rochester Electronics LLC 8212 - Registered Bus Transceiver, 82 Series, 8-Bit, True Output PDF Buy
    54AC14/QCA
    Rochester Electronics LLC 54AC14 - Inverter, AC Series, 6-Func, 1-Input, CMOS - Dual marked (5962-8762401CA) PDF Buy
    54ACTQ32/QCA
    Rochester Electronics LLC 54ACTQ32 - OR Gate, ACT Series, 4-Func, 2-Input, CMOS, - Dual marked (5962-8973601CA) PDF Buy
    5962-8672601EA
    Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy

    1AV SERIES Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    1AV Series
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 39.93KB 1

    1AV SERIES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1AV Series

    Abstract: 1AV11F 1AV chart 2 ISO 7637-1 MICRO SWITCH 1AV12F 1AV12F 1AV13F load dump pulse 1AV11F honeywell
    Contextual Info: 1AV SERIES CHART 2 NOTES OVER SPECIFIED VOLTAGE AND MAXIMUM TEMPERATURE RANGE OF SPECIFIC LISTINGS MECHANICAL CHARACTERISTICS / T V A / A SWITCH IS OFF RELEASED CONDITION WHEN VANE ACTUATOR (TOOTH) IS IN GAP LEFT RIGHT DIFFERENTIAL /S\ ABSOLUTE MAXIMUM RATINGS ARE THE


    OCR Scan
    PDF

    1AV Series

    Abstract: 1AV11F honeywell sensor circuit diagram 1AV12F 1AV13F 1AV11F
    Contextual Info: ISSUE 3 Installation Instructions for the 1AV Series 2 Vane Sensor PK 87573 WIRING DIAGRAMS WARNING PERSONAL INJURY • DO NOT USE these products as safety or emergency stop devices, or in any other application where failure of the product could result in personal injury.


    Original
    87573-3-EN 1AV Series 1AV11F honeywell sensor circuit diagram 1AV12F 1AV13F 1AV11F PDF

    1AV3A

    Contextual Info: Ö U AL IT Y TECHNOLOGIES CORP S7E P 74bbfl51 0 0 0 4 1 7 b OOfl • ö T Y Optoisolator Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The HI 1AV series consists o f a gallium arsenide, infrared emitting


    OCR Scan
    74bbfl51 H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A 1AV3A PDF

    eh11a

    Abstract: 1AV Series H11AV1A H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P 11AV2
    Contextual Info: Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I 1AV series consists o f a gallium arsenide, in fra re d em itting d io d e co u p led w ith a silicon p h o to tra n sisto r in a dual in-line


    OCR Scan
    H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A H11AV3A eh11a 1AV Series H11AV1A H11AV1 H11AV2 H11AV3 0730-2P 11AV2 PDF

    hall effect sensor tachometer

    Abstract: MICRO SWITCH 1AV3A hall sensor magnet 4 terminals 1AV3A 1AV2A 3AV2C 1AV Series 3AV1C 4AV12A 4AV11C
    Contextual Info: AV Van operated position sensors FEATURES TYPICAL DIMENSIONS . Hall effect sensor • Single digital output. . . current sinking or sourcing » Versatile mounting o 3 pin solder/quick-connect terminals or leadwires • 6 to 24 VDC power supply • Lower operating force


    OCR Scan
    4AV11C V11C-T1 4AV12C 4AV11A 4AV12A hall effect sensor tachometer MICRO SWITCH 1AV3A hall sensor magnet 4 terminals 1AV3A 1AV2A 3AV2C 1AV Series 3AV1C 4AV12A PDF

    MICRO SWITCH 1AV3A

    Abstract: 3AV2C 1AV Series 4av11c-T1 hall effect vane sensor 4AV11A-T1 hall sensor magnet 4 terminals 3AV1C 4AV11C 3AV1c HONEYWELL HALL EFFECT VANE SENSOR
    Contextual Info: HONEYWELL INC/ AV MICRO nE MSS1ÖBQ DQ10ÛQD T d Van operated position sensors N- t s *i3> FEATURES TYPICAL DIMENSIONS . Hall effect sensor • S/ng/e digital output. . . current sinking or sourcing » Versatile mounting o 3 pin solder/quick-connect terminals or


    OCR Scan
    4AV11C 4AV12C 4AV11A 4AV12Â V11C-T1 MICRO SWITCH 1AV3A 3AV2C 1AV Series 4av11c-T1 hall effect vane sensor 4AV11A-T1 hall sensor magnet 4 terminals 3AV1C 3AV1c HONEYWELL HALL EFFECT VANE SENSOR PDF

    1AV Series

    Contextual Info: FU JI 2SK2762-01L,S t ìiu M s ir t ó u t ì FAP-IIS Series > Features - N-channel MOS-FET 800V 4Q 4A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VG S = ± 30V Guarantee Repetitive Avalanche Rated


    OCR Scan
    2SK2762-01L 1AV Series PDF

    2SK2522-01MR

    Contextual Info: F U JI S T D g Q E 2SK2522-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0 ,1 8 H 18A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof > Applications


    OCR Scan
    2SK2522-01MR 20KjQ) PDF

    2SK2652-01

    Abstract: 526A TA6A
    Contextual Info: F U JI 2SK2652-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 2 ,5 ß 6A > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5 > Applications


    OCR Scan
    2SK2652-01 00D4b71 526A TA6A PDF

    EFL 233

    Abstract: 2SK2757-01 n4570
    Contextual Info: F U JI ölüMeulßäUG 2SK2757-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0 ,9 Q 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated


    OCR Scan
    2SK2757-01 O-220AB EFL 233 n4570 PDF

    Contextual Info: ¡a s H a r r i s S E M I C O N D U C T O R F m S L 1 1 U U D , } F m S L 1 1 U U R “ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan
    1-800-4-HARRIS PDF

    Contextual Info: FU JI 2SK2690-01 N-channel MOS-FET tìU ,s iE u itìu e FAP-IIIB Series 60V > Features - 0,0lß 80A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier


    OCR Scan
    2SK2690-01 PDF

    HTG 7000

    Abstract: 609 200A DO-200AA R23A14B R23A16A R23A18A international rectifier 07221-D
    Contextual Info: 4855452 INTERNATIONAL RECTIFIER IO R 73C 07218 Data Sneet No. PD-2.Î47 INTERNATIONAL RECTIFIER 73 D DE 1 4ÔSS4SS 0DD7E1Û 3 | R23A SERIES 1800-1200 VOLTS RANGE 635 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS PART NUMBER VRRM* VR ” M


    OCR Scan
    14fi554S2 000721fl R23A18A R23A16A R23A14B R23A1SB Lias54SE DO-200AA HTG 7000 609 200A international rectifier 07221-D PDF

    huf75337g3

    Abstract: 75337S
    Contextual Info: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S HARRIS S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features ^ • 62A, 55V M These N-Channel power MOS­ • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan
    HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S TB334, 1-800-4-HARRIS huf75337g3 75337S PDF

    1AV3A

    Abstract: H11AV1A H11AV1 H11AV2A H11AV2 H11AV3 H11AV3A 1av3 0730-2P ic 5304 1a
    Contextual Info: G E SOLI» 01 STATE 3>E § 3 f l ? 5 0 ö l ODIITDb O ptoelectronic specifications . Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A G a As Infrared Emitting D iode & N P N Silicon Photo-T ransistor T he G E Solid State 1AV series consists of a gallium arsenide, infrared


    OCR Scan
    H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A H11AV2 1AV3A H11AV1A H11AV1 H11AV3 H11AV3A 1av3 0730-2P ic 5304 1a PDF

    pj 939 diode

    Abstract: diode PJ 41 MG pj 939 diode SS 12 pj 889 diode
    Contextual Info: H A F R R I F S S L 1 3 A D , S E M I C O N D U C T O R F 1 3 A R Description Features 9A, 100V, Tds ON = 0-180i2 • Total Dose - Meets Pre-RAD Specifications to 1 00K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/m g/cm 2 with


    OCR Scan
    1-800-4-HARRIS pj 939 diode diode PJ 41 MG pj 939 diode SS 12 pj 889 diode PDF

    Contextual Info: MIVR 42051 mn NEGATIVE VOLTAGE REGULATORS Designed for use in general purpose applications ABSOLUTE MAXIMUM RATINGS FEATURES • • • Output current to 5 amps Output voltage to -34V Internal short circuit protection Ratings Symbol Value Unit ^OUT 5 A Power Dissipation


    OCR Scan
    22-PIN PDF

    HALL 95A

    Abstract: diode 60S05 95a hall ZD 103 ma 60S05 60S8
    Contextual Info: 60S SER IES Micro/semi Corp. f The diode e xp e ns SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: 6 0 2 941-6300 DESCRIPTION/FEATURES • ECONOMICAL 6 AMP Iq MOLDED DEVICE OFFERS CAPABILITY OF STUDMOUNTED RECTIFIERS • 400 AMPS SURGE PROVIDES HIGH


    OCR Scan
    60S05 60WARD HALL 95A diode 60S05 95a hall ZD 103 ma 60S05 60S8 PDF

    Contextual Info: H a r r is S E M I C O N D U C T O R FSF250D, FSF250R " M • Single Event W rW • ■ Package Features • 24A, 200V, rDS ON = 0.110ft Total Dose ^ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 • M TO-254AA - Meets Pre-RAD Specifications to 100K RAD (Si)


    OCR Scan
    FSF250D, FSF250R O-254AA 36MeV/mg/cm2 110ft 1-800-4-HARRIS PDF

    Contextual Info: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 100V, rDS ON = 0.022£i The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan
    FSJ160D, FSJ160R 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms; PDF

    75307

    Abstract: kp-03 lambda LAS 14 AU 75307*p lambda* lis
    Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S HARRIS S E M I C O N D U C T O R 13A, 55V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs January 1998 MM Features • 13A, 55V • Ultra Low On-Resistance, ro s O N = 0 .0 9 0 i2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan
    HUF75307P3, HUF75307D3, HUF75307D3S TB334, 1-800-4-HARRIS 75307 kp-03 lambda LAS 14 AU 75307*p lambda* lis PDF

    75333p

    Contextual Info: HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S HARRIS S E M I C O N D U C T O R 56A, 55V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETs January 1998 MM Features • 56A, 55V • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan
    HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S TB334, HUF75333 1-800-4-HARRIS 75333p PDF

    Contextual Info: fffj h a rris FSF150D, FSF150R S E M I C O N D U C T O R " W J " W • ■ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs March 1995 Features Package • 25A N o te1 , 100V, rDS(ON) = 0.070Q TO-254AA • Total Dose Meets Pre-Rad Specifications to 10OkRAD(Si)


    OCR Scan
    FSF150D, FSF150R O-254AA 10OkRAD 36MeV/mg/cm2 for3E13 1-800-4-HARRIS PDF

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original
    GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a PDF