1N5185 Search Results

Contextual Info: 1N5185 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time250n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)3

Contextual Info: Racttflers, Fast Recovery Continued ; • T A f C) IFSM<A«PS) CASE VRRM (VOLTS) SB' ' / /I / m lO (AM PS) 3-0 75 75 55 55 50 50 80 80 G PR-1A DO-15 ' G PR-3A 1N5185 1N5415 m CPR2F-010 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 ms CPR2F-040

CR2F-020

Abstract: 1N5185 CPR2F-010 CPR2F-020 CPR2F-040 CPR2F-060 CPR2F-080 CPR2F-100 CR2F-010 CR2F-040
Contextual Info: Rectifiers, Fast Recovery Continued IO (AMPS) 2.0 3.0 @T (oC) A 75 75 55 55 IFSM (AMPS) 50 50 80 80 CASE GPR-1A DO-15 1N5185 1N5415 100 CPR2F-010 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 400 CPR2F-040 CR2F-040 1N5188 1N5418 600 CPR2F-060

1N5416

Abstract: 1N5185 1N5186 1N5187 1N5415 1N5417 CPR2F-010 CPR2F-020 CR2F-010 CR2F-020
Contextual Info: R ectifiers, Past Recovery Continued 2.0 lO {AMPS) 3.0 @ TA(°C) 75 75 55 55 IFSM (AMPS) 50 50 80 80 II / CASE G PR-1A VRRM (VOLTS) DO-15 5° 1N5185 1N5415 100 CPR2F-010 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 400 CPR2F-040 CR2F-040 1N5188

1N5185

Abstract: 1N5415 1N5416 1N5417 1N5418 1N5420 CPR2F-010 CPR2F-020 CPR2F-040 CPR2F-060
Contextual Info: Rectifiers, Fast Recovery Continued IO (AMPS) 2.0 3.0 @TA (oC) 75 75 55 55 IFSM (AMPS) 50 50 80 80 CASE GPR-1A DO-15 GPR-3A VRRM (VOLTS) 50 1N5185 1N5415 100 CPR2F-010 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 400 CPR2F-040 CR2F-040 1N5188

Contextual Info: Rectifiers, Fast Recovery Continued 2.0 lO (AMPS) 3.0 @ T a (°C) 75 75 55 55 IFSM (AMPS) 50 50 80 80 CASE I/ / GPR-1A VRRM (VOLTS) DO-15 50 n a m B GPR-3A 1N5185 1N5415 100 CPR2F-010 CR2F-010 1N5186 1N5416 200 CPR2F-020 CR2F-020 1N5187 1N5417 400 CPR2F-040

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

Contextual Info: PROCESS CPD25 Fast Recovery Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 11 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

RGP15G diode

Abstract: diode RGP30G diode GP20 gp20 diode zener diode cross reference 300v zener DIODE RG3j DIODE RG4A D0204AP G1854
Contextual Info: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECO VERY SILIC O N RECT IFIERS continued 2.0 1.5 IM A ] D0204AP DO 15 PKG TYPE ( (Ì GP20 % r \i D0204AP 00201AP (k <^ VRRM (volts) D0204AP l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

d137 smd diode

Abstract: rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135
Contextual Info: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECOVERY SILICON RECTIFIERS continued 2.0 1.5 IMA] D0204AP DO15 PKG TYPE ( (Ì D0204AP GP20 % (k \i r 00201AP D0204AP <^ VRRM (volts) l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P 200 RGP15D

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected