1N3069 Search Results

1N3206

Abstract: JAN256 1n900 MC914 1N3064M 1N3069M 1N3207 MC001 MC001A MC914A
Contextual Info: 1 N 8 9 7 - 1N902, 1N3064M, 1N3069M, 1N 3206,1N 3207, MC914 MC914A, MC916, MC916A, MC001, MC001A, M C002 Microsemi Corp. FEA TU RES • • • • • n in n c c Microminiature package. Fast recovery. Hermetically sealed glass package. Stable surface films integrally bonded to the device crystal.

N3206

Abstract: 1N3206 in 3 N3064M
Contextual Info: 1N897 - 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, MC916, MC916A, MCOOlj MCOOIAj MC002 Microsemi Corp. s c o rra , ^ j For more information call: 714 979-8220 / PELLET DIODES FEATURES • M ic r o m in ia tu r e p a c k a g e . • F a s t re c o v e ry .

1N3206

Abstract: 1N3064M 1n900 MC914 1N3069M 1N3207 1N897 1N902 MC001 MC914A
Contextual Info: 1N897 - 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, / Microsemi Corp. f m SCOTTSDALE, AZ / / F o r m o r e in f o r m a ti o n call: 7I4 979-S220 M C 9lO , M C 910A , The diode experts / SANTA ANA, CA MC001, MC001A, MC002 PELLET DIODES FEATURES

c914

Abstract: c916 1N3206 1n897 MC001A
Contextual Info: 1N897- 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, MC916, MC916A, MC001, MC001A, MC002 SCOTTSDALE, A Z SANTA ANA, CA For m ore inform ation call: 714 979-8220 MICRO-DIODES FE A TU R E S M ic ro m in ia tu re p a c k a g e . F a st r e c o v e ry .

1N3069

Abstract: 1N3068 1N790 1N812 1N818 1N813
Contextual Info: DIODES HIGH VOLTAGE SWITCHING DIODES BY DESCENDING BV GLASS PACKAGE Continued BV TYPE VOLTS nA •r @ MIN MAX @ VO LTS MAX Vr VOLTS vF @ C XR R PF ns @ If mA MAX MAX Package 1N818 75 200 @ 55 1.5 @ 30 5.0 50 DO-7 1N927 65 100 @ 10 1.0 10 4.0 150 DO-7 1N3069

Contextual Info: 1N 897- 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, MC916, MC916A, MC001, MC001A, MC002 llililil MicroisemiCoro. SCO'riSDALE. AZ .V/lSTA ASA. CA t o r im ’ 14 979-K2:o PELLET DIODES FE A T U R E S • M ic r o m in ia tu re p a c k a g e . • Fa st reco very.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1n3069

Contextual Info: i, Una. TELEPHONE: 973 376-2922 '(212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1 N3OB5, 1 N3111,1 N51 B2SERIES 15O Amp Avg Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics 1N3111 1N308S

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

IC 7449

Abstract: ta 8250 1N3206 an 8249 IC 7448
Contextual Info: Signal/General Purpose Diodes Microsemi Division Data Package jïy p e Mil Outline Spec Sheet Watertown Santa Ana Watertown Watertown Watertown Santa Ana Watertown Watertown Watertown Santa Ana Watertown Watertown Watertown Watertown Santa Ana Watertown Scottsdale

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

IN733A

Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
Contextual Info: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano

SKP33A

Abstract: P8KE27A PSKE12A IN504 IN5646 P6KE0.1a P8KE P8KE24 F6KE39A IN5646A
Contextual Info: discrete jGmitronicr hot line fO L L FREE NUMBER 800-777-3960 1500 Watts peak d e v ic e s Metal Case and Epoxy Molded. Silicon Voltage Transient Suppressor Diodes DO-13 METAL MOLDED CASE Reverse Stand Off Voltage Breakdown Voltage Maximum Maximum A*Available as bi­

IN3070

Abstract: LN4148 diode d07-15 1N3069 1n4148 D035 in4446 1N4009 IN3604 D035 1N916
Contextual Info: TT DEflsSmCHL. ODOD353 2 | _ . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC ’ • 99D 00 3 5 3 D T'-oj-Oj Ft ‘ SILICON DIODES M in. Forward P.I.V., Currant Volt* at I V mA Reverso Currant at 25% Typ* Casa 1N916 0035 100 1N 916A

diode SG22

Abstract: 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141
Contextual Info: 3869720 G E N E R A L D IO D E CORP 86D 0 0 3 3 8 GENERAL DIODE CORP flb T - D E l B û b T O D DD0D33fl 3 1 T àl-à7 SILIC O N D IO D ES . . . cont’d Case Style — DO-7 'il % 9& <h r« yi o ° o TYPE 1N4B2A 1N4S3 1N463A 1N464 1N4B4A Ç90 ïO cl 30 30

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

IN3599

Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Contextual Info: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5