1N2495 Search Results

RSF0805

Abstract: REC-12 RCF0805 UT513
Contextual Info: Standard Recovery Rectifiers REC 1N1346A 1N1346B 1N2276 1N2495 60S4 6A4 DR754 UTR4440 1N1347 1N1347A 1N1347B 1N2277 1N2496 EOSS 1N1348 1N1348A 1N1348B 1N2278 1N2497 60SE 6A6 DR756 1N2279 60S8 6A8 DR758 1N2280 60S10 6A10 DR7510 1N2281 UT5105 UT5110 UT5120 UT5130

1N1542

Abstract: 1n2238A
Contextual Info: rectifiers 10 Part A 150°C PIV rnA 150°C 6 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 3 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 5 5 5 5 600 50 100 150 200 300 400 500 600 50 100 200 300 400 500 600 50 50 100 100 200 240 200 400 480 400 600 720 600 50 200 300 400 500 600 500

Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in power supply and other rectification applications.

1N1342

Abstract: 1N1199 1N1202 1N1124 1N1201 1N1581 1N13468 1N1348 1N1200A 1N1200
Contextual Info: 8 3D 00 172] 8136650 S E M I C O N D U C T OR S INC A3 Silicon Power Rectifiers D E | fll3btiSD Ú/- J 7 QD0D17E fl 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341 A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582,

1N3610

Abstract: 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227
Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in

LT3973-3.3

Abstract: IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731
Contextual Info: ^ discrete devices | jemitronicr hot line TO LL FREE NUM BER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Maximum Peak Reverse Voltage volts Type Maximum Average Forward Current (Amps) @ Case Temp. (°C ) Maximum

LT3973-3.3

Abstract: L1117T-3.3 LT3971-3.3
Contextual Info: jomitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont'd stud mounted silicon power rectifiers DO-4 case style — cont’d T »« Maximum Maximum Average Forward Peak Reverse Current (Amps) Voltage @ Case Temp. (°C) (volts)

1N1064

Abstract: 1n2238A 1N1065 1N1066 1N1067 1N1068 1N1069 S2020 S2040 S2060
Contextual Info: Silicon Power Rectifier S/R20 Series Dim Inches M illim ete r M inim um M axim um A B C D E F G H J M N P N otes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s within 2 1 / 2 th re a d s 3. S ta n d a rd P o larity: Stud is C a th o d e R everse Polarity: S tu d is

1n2238A

Contextual Info: Silicon Power Rectifier S/ R 2 Q Series Dim. Inches M illim eter Minimum Maximum Minimum Maximum N otes n 11 1 k t t il J F E A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ithin 2 1 /2 th re ad s 3. S tandard P olarity: Stud is Cathode

Contextual Info: Silicon Power R e c t i f i e r eries Dim Inches M inim um 1 Jh A B C D E F G H J M N P N otes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ith in 2 1 / 2 th re a d s 3. S ta n d a rd P o la rity : S tu d is C a th o d e Reverse P o la rity : S tu d is A node

1N4537

Abstract: 1n3565 1N3574 1N4540 1N357 1N2370A 1N2512 1N3775 1n3923
Contextual Info: SE MI CO N C O M P O N E N T S INC 2flE D • fll3S157 0 0 0 0 5 3 4 7 ■ STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 lQ RATING TO 16 AMPS t rr TYPE VF TEMP CURRENT V °C AMPERES TEMP TEMP NUMBER PRV VOLTS 1N2362A 1N2364 1N2364A 1N2366 1N2366A 1400 1500

BROWN BOVERI

Abstract: B 170 BROWN BOVERI 1N1124 1N1344A N1346 S2010 1N1614 Diodes N1124 S2060 1N1342
Contextual Info: BROWN BOVERI «FMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEIM Silicon Avalanche Power Rectifiers BBC Geschäftsbereich Halbleiter und Stromrichter Telefon 06206 503-1, Telex 04-65 727 Postfach 200, D-6840 Lampertheim Series 20 16 Amperes Average

1N1066

Abstract: 1N1344A
Contextual Info: Silicon Power Rectifier S/R20 Series Dim. Inches M illim e te r M inim um M axim um Minimum M aximum N otes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ithin 2 1 / 2 th re a d s 3. S ta n d a rd P olarity: Stud is Cathode Reverse P olarity: Stud is

1N224

Abstract: 1N1064 1N1065 1N1066 1N1067 1N1068 1N1069 S2020 S2040 S2060
Contextual Info: Silicon Power Rectifier S / R 2 0 Series Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full th re ad s w ithin 2 1 /2 threads 3. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is

TM108

Abstract: 1N223B 1N2268 TR301 TM69 1N245S 1N244B TM37 1N2227 1N2225
Contextual Info: 3869720 GENERAL DIODE CORP GE NE R AL DIO DE 86D 00327 D 7- o - r< CORP DE^I 3 0 ^ 7 2 0 0000327 T T STUD MOUNTED SILICON POWER RECTIFIERS . . . cont’d TYPE \ 1N2224A 1N2225 1N2225A 1N222S 1N222BA Do-4 Do-10 . Do-10 Do-4 . DO-4 1000 1000 1000 1200 1200

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

R2045

Abstract: 1N1614 Diodes INI615 R2070 10-32 UNF 2A r205 10-32-UNF-2A 1N1581 1N22 R2050
Contextual Info: | Series 20 | 6KE3 iW ELECTRICAL C H A R A C T E R IST IC S: M axim um A ve ra ge Forw ard Current, Single Phase Half W a v e DC Rating at 126° C. Case Temperature . 16 amperes M axim um Surge Current one cycle of 60 C P S sine w ave . 200 amperes

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

BYX71-600

Abstract: BYX71-350 philips BYX71-600 BY208 BYX71 MDA2501 Solitron J775-2 30S8 BY198 GI DL005
Contextual Info: RECTRON SEMICONDUCTOR INDUSTRIAL Part No. 40266 40267 1.5KE10 1.5KE10 1.5KE10 1.5KE100 1.5KE100 1.5KE100 1.5KE100A 1.5KE100A 1.5KE100A 1.5KE10A 1.5KE10A 1.5KE10A 1.5KE11 1.5KE11 1.5KE11 1.5KE110 1.5KE110 1.5KE110 1.5KE110A 1.5KE110A 1.5KE110A 1.5KE11A 1.5KE11A