19946 Search Results

ECN-19946

Abstract: a 19946
Contextual Info: A TW C GRANTZ 8/8/2002 ECN-19946 RELEASE FOR PRODUCTION TH I S DESI GN H AS NOT BEEN AP P ROVED BY ENGI NEERI NG DO NOT DI STRI BUTE TH I S P RI NT S A M TE C 5 2 0 P A R K E A S T B L V D , N E W A L B A N Y , IN 4 7 1 5 0 P H O N E : 8 1 2 .9 4 4 .6 7 3 3

VESD05A1B-02V-GS08

Contextual Info: VESD05A1B-02V Vishay Semiconductors ESD-Protection Diode in SOD-523 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 > 20 kV contact discharge > 30 kV air discharge • Typ. capacitance 12 pF VR = 2.5 V; f = 1 MHz • Leakage current < 0.1 µA (VR = 5 V)

epcos 565-2

Abstract: B57540G0103F000 B57540G0104F000 565-2 EPCOS EPCOS B25 160 131850 263640 EPCOS b57540 B57540G0502F000 10311
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57540 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

B57550G0103F000

Abstract: 13844 B57550G0104H000 B57550G0202G000 B57550G0202F000 263640 33260 B57550 B57550G0103J000 533390
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57550 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: VESD05A1B-02Z Vishay Semiconductors ESD Protection Diode in SOD923 Features • Small SOD923 package • Low leakage current e3 • ESD immunity acc. to IEC 61000-4-2 ± 20 kV • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

marking code 2 SOD523

Abstract: VESD05A1B-02V-GS08
Contextual Info: VESD05A1B-02V Vishay Semiconductors ESD-Protection Diode in SOD523 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 > 20 kV contact discharge e3 > 30 kV air discharge • Typ. capacitance 12 pF VR = 2.5 V; f = 1 MHz • Leakage current < 0.1 µA (VR = 5 V)

H5DU5162ETR

Abstract: CSTCE20M0V53A-R0 M30800SAFP TC74HCU04AP
Contextual Info: Technical Data of Ceramic Resonator MURATA Part No.: CSTCE20M0V53A-R0 Applied to M30800SAFP H TOYAMA MURATA MANUFACTURING CO., LTD. Product Engineering Service Section I Planning & Market Promotion Department Piezoelectric Components Group Approved by Checked by

spr291

Abstract: RZ26L RZ26 dec 21040 tty00 DKA400 eb64 BA 6688 L pc motherboard schematics Alpha 21064
Contextual Info: Alpha Microprocessors Motherboard Debug Monitor User’s Guide Order Number: EC–QHUVF–TE Revision/Update Information: This is a revised document. It supersedes the Alpha Microprocessors Motherboard Debug Monitor User’s Guide, EC–QHUVE–TE. Digital Equipment Corporation

263640

Abstract: 74264 B57560G0103F000 164 20 8525 533390 70216 820810 EPCOS 1786 B57560G0202 B57560G0104F000
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57560 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: INTEGRATED TO SHIBA CIRCUIT TECHNICAL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT DATA TA 7522F SILICON MONOLITHIC DUAL VOLTAGE COMPARATOR The TA7522F is an easy-to-use small 8-pin mini-flat package 1C incorporating two voltage comparator circuits. Because of its very small size, it is useful for hybrid 1C

A 69258

Abstract: 69258 a 69258 specifications pa 66 gf CH-8306 94-V2 2 Pin Screw Terminal Block Connector 5mm Pitch X right angle 14 pin pcb connector 2mm pitch F6925
Contextual Info: Catalog E 074468 08/98 Edition 1 DIN Rail Mount Enclosure IDG-A IDG-A1: Snap-together design with installed width of 17.5+0.5 mm General Main Features The new IDG-A1 DIN rail mount enclosure is ideal for applications requiring a housing for smaller pcbs and minimal

a 19946

Contextual Info: VESD05A1B-02V Vishay Semiconductors ESD Protection Diode in SOD523 Features • Small SOD523 package • Low leakage current e3 • ESD immunity acc. to IEC 61000-4-2 ± 20 kV • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

A 69258

Abstract: a 69258 specifications 69258 din mount 96 pin pcb connector pa 66 gf 2 Pin Screw Terminal Block Connector 5mm Pitch X 2 Pin Screw Terminal Block Connector 5mm Pitch FASTON connector PCB terminal blocks 94-V2
Contextual Info: Catalog E 074468 08/98 Edition 1 DIN Rail Mount Enclosure IDG-A IDG-A1: Snap-together design with installed width of 17.5+0.5 mm General Main Features The new IDG-A1 DIN rail mount enclosure is ideal for applications requiring a housing for smaller pcbs and minimal

TMS320C24X

Abstract: CAN BUS SENSOR instruction set of TMS320c24x DSP PROCESSOR send_frequence.asm MCR 2305 TMS320C241 FEDCBA9876543210 24256 7229h interfacing AC motor to pic
Contextual Info: Application Report SPRA500 Understanding the CAN Controller on the TMS320C24x DSP Controller Claire Monnet Digital Signal Processor Solutions Abstract The Texas Instruments TIä TMS320F241, TMS320C241 and TMS320F243 digital signal processor (DSP) controllers contain an on-chip Control Area Network (CAN) module. This module

VESD05A1B-02V-GS08

Contextual Info: VESD05A1B-02V Vishay Semiconductors ESD-Protection Diode in SOD523 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 > 20 kV contact discharge > 30 kV air discharge • Typ. capacitance 12 pF VR = 2.5 V; f = 1 MHz • Leakage current < 0.1 µA (VR = 5 V)

33260

Abstract: B57560G0103F000 13844 533390 alu 74264 10311 164 20 8525 2390 401 72203 EPCOS 4641 402060
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: B57560 Date: April 2008 The following products presented in this data sheet are being withdrawn. Ordering Code Substitute Product Date of Withdrawal B57560G0145J002 B57550G0145J002 2008-10-10

Contextual Info: VESD05A1B-02V Vishay Semiconductors ESD-Protection Diode in SOD523 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 > 20 kV contact discharge e3 > 30 kV air discharge • Typ. capacitance 12 pF VR = 2.5 V; f = 1 MHz • Leakage current < 0.1 µA (VR = 5 V)

ntc 100-9 Thermistor

Abstract: EPCOS 1966 g560 B57560G0145F000
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: B57560 Date: April 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

2sa1837

Abstract: 2SC4793 2sa1837
Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2 S A 1 837 SILICON PNP EPITAXIAL TYPE DATA 2SA1837 Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • 10±0.3 0 3.2±0.2 2.7±0.2 -*1— I- High Transition Frequency : fT = 70MHz (Typ.)

19945

Contextual Info: VESD05A1B-02V Vishay Semiconductors ESD-Protection Diode in SOD-523 FEATURES • Single-line ESD-protection • Capacitance typical CD = 12 pF VR = 2.5 V, f = 1 MHz 2 1 • Leakage current IR < 1 µA (VR = 5 V) 20278 • ESD-protection acc. IEC 61000-4-2

ta7522

Contextual Info: INTEGRATED TO SHIBA CIRCUIT TECHNICAL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT DATA TA 7522F SILICON MONOLITHIC DUAL VOLTAGE COMPARATOR The TA7522F is an easy-to-use small 8-pin mini-flat package 1C incorporating two voltage comparator circuits. Because of its very small size, it is useful for hybrid 1C

cx82110

Abstract: transistor MIB11 mib11 cx11647 CX24611 xdsl conexant port channel afe pd4564841-10 CX82100-41 conexant lan md06
Contextual Info: CX82100 Home Network Processor HNP Data Sheet (Preliminary) Conexant Proprietary Information Conexant Confidential Information Dissemination, disclosure, or use of this information is not permitted without the written permission of Conexant Systems, Inc.

MG30G1BL4

Abstract: mg30g1 2-33F1A MG30 mg30g
Contextual Info: TOSHIBA GTR MODULE SEMICONDUCTOR T O S H IB A TECHNICAL MG30G1 B L 4 SILICON NPN TRIPLE DIFFUSED TYPE DATA M G 30Ü 10L4 HIGH POWER SWITCHING APPLICATIONS. • • • • The Collector is Isolatedfrom Case. High DC Current Gain : hjvE = 100 (Mixi.) (Iq = 30A)

How to program CY7C63001

Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR ultra39000 STAR RAM YEAR DATE CODE cypress srams SRAM 1987 Atmel 1990 hp 530 motherboard circuit and solution
Contextual Info: 9 9 7 A N N U A L R E P “Cypress’s 1997 target is to get back on the growth track with record sales.” T.J. Rodgers, 1996 Annual Report $600 500 400 Dollar Amounts in Millions 1 300 200 100 92 93 94 95 96 97 O R T New Products, New Markets 4-MEGABIT SRAM: 26,239,686 TRANSISTORS