1961 30 TRANSISTOR Search Results

transistor P2F

Abstract: MARKING P2F P2B MARKING CODE MARKING H3B p2F 45 IEC134 PXT2907 PXT2907A 1961 30 TRANSISTOR ON MARKING P2F
Contextual Info: 711005b □ f l 2 fl • P H I N PXT2907/A SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A. QUICK REFERENCE DA TA

Transistor D 799

Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR
Contextual Info: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G | MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.

2N512

Abstract: Texas Germanium 2N512B 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power
Contextual Info: TYPES 2N512, 2N512A, AND 2N512B P-N-P ALLOY-JUNCTION GERMANIUM HIGH-POWER TRANSISTORS T Y P E S 2N 512, 2 N 512A , and 2 N 5 1 2 B B U L L E T IN NO. DL-S 611472, MARCH 4 0 , 60, or 80 VOLTS 15-Amp Collector Current 150-Watt Dissipation LOW lco LOW VK LOW THERMAL RESISTANCE

2N1132

Abstract: 2N1131
Contextual Info: TYPES 2N1131, 2N1132 P-N-P SILICON TRANSISTORS B U L L E T IN NO. D L-S 731775, J U N E 1961- R E V IS E D M A R C H 1973 GENERAL PURPOSE MEDIUM-POWER TRANSISTORS • 2 Watts at 2S°C Case Temperature • Complements to 2N696 and 2N697 • 10-ohm Saturation Resistance max

FP11G

Abstract: FP1189-G
Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET

RFID ID-20

Abstract: 113 marking code transistor ROHM HFET sot-89 MARKING CODE ab FP1189-PCB2140S FP1189-PCB900S JESD22-A114 FP1189 FP1189-PCB1900S 25c021
Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm

RFID ID-20

Abstract: marking c7 sot-89 113 marking code transistor ROHM FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S JESD22-A114 30ACPR ohm resistor 1 W 100 ROhm
Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm

FP11G

Abstract: 113 marking code transistor ROHM FP1189 FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S
Contextual Info: FP1189 ½ - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain

Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET

8N35

Abstract: 72SM AN569 MTH8N35 MTH8N40 MTM8N35 MTM8N40 TMOS 8IM40 MTH8
Contextual Info: MOTOROLA SC IM E D I XST R S/R F t.3b?aS4 OOfiTötiM 4 | MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MTH8INI35 MTH8N40 MTM8N35 MTM8N40 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS Th ese TM O S Pow er FE T s are designed for high voltage, high

FP21G

Abstract: MARKING CODE 51 5 fet sot-89 FP2189 FP2189-G FP2189G MARKING CODE SOT-89 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89
Contextual Info: FP2189 1 - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz The FP2189 is a high performance 1-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain

2N4959 MOTOROLA

Abstract: 2N4957 2N4957 MOTOROLA transistor on 4959 2n4959
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA b3b72S 4 OQTMOM'i _ T = *3 H • SEMICONDUCTOR ■ ■ 1 «MOTb 5 2N4957 2N4958 2N4959 TECHNICAL DATA The R F Line | Iß = -3 0 mA HIGH FREQUENCY TRANSISTORS PNP SILICON HIGH FREQUENCY TRANSISTORS . . . d e s ig n e d fo r h ig h -g a in , lo w -n o is e a m p lifie r, o sc illato r and

IS136

Abstract: IS-136 RF2488
Contextual Info: RF2488 Preliminary 8 MULTI-MODE DUAL-BAND LNA MIXER Typical Applications • TDMA/EDGE Handsets • TDMA/GSM Dual-Band Handsets • TDMA IS-136 Handsets • GSM/DCS/EDGE Handsets • GAIT Handsets Product Description Optimum Technology Matching Applied Si BJT

FETEX-150

Abstract: biosensor Palm Vein Technology WX300 "CMOS GATE ARRAY" fuji graphene SHINKO pharma suite riken fujitsu optical module
Contextual Info: Corporate Data History of Fujitsu ● Business 1935 ～ Developments ● Jun 20, 1935 ⿟Fuji Tsushinki Manufacturing Corporation, the company that later becomes Fujitsu Limited, is born as an offshoot of the communications division of Fuji Electric. The new company is

HC49

Abstract: HC49S ICS840021AGI ICS840021AGIT ICS840021I HC49 footprint
Contextual Info: ICS840021I Integrated Circuit Systems, Inc. FEMTOCLOCKS CRYSTAL-TOLVCMOS/LVTTL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS840021I is a Gigabit Ethernet Clock Generator and a member of the HiPerClocksTM HiPerClockS™ family of high performance devices from ICS. The

c4460

Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
Contextual Info: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4

840021AGLFT

Abstract: function generator circuit schematic diagram full electrical power generator using transistor 021al AIR FLOW DETECTOR CIRCUIT DIAGRAM pcb layout HC49 HC49S ICS840021 ICS840021AG 840021AGLF
Contextual Info: ICS840021 FEMTOCLOCK CRYSTAL-TO-LVCMOS/LVTTL CLOCK GENERATOR General Description Features The ICS840021 is a Gigabit Ethernet Clock Generator and a member of the HiPerClocksTM HiPerClockS™ family of high performance devices from IDT. The ICS840021 uses a 25MHz crystal to synthesize

Contextual Info: H A R R CD4503BMS IS S E M I C O N D U C T O R CMOS Hex Buffer December 1992 Pinout Features CD4503BMS TOP VIEW • High Voltage Type 20V Rating • 3 State Non-Inverting Type • 1 TTL Load Output Drive Capability d is a • 2 Output Disable Controls D1

HP 2602

Abstract: LM11 op amp HP2602 HP-2602 2n22222 "Secret Life of Capacitors" LM11 OP KELVIN-VARLEY DIVIDER LM11 national INS8070
Contextual Info: National Semiconductor Application Note 260 January 1981 By combining an “inferior”, 20 year old A/D conversion technique with a microprocessor, a developmental A/D converter achieves 1 part-per-million 20-bit linearity. The absolute accuracy of the converter is primarily limited by the voltage

Contextual Info: UCC29411, UCC29412, UCC29413, UCC39411, UCC39412, UCC39413 LOWĆPOWER SYNCHRONOUS BOOST CONVERTER ą SLUS245D – MARCH 2000 – REVISED NOVEMBER 2000 D 1-V Input Voltage Operation Start-Up D D D D D D D PW PACKAGE TOP VIEW Ensured Under Full Load on Main Output,

SD-50 Rectifier Diode

Abstract: 29411PW 39411PW UCC29411 UCC29412 UCC29413 UCC39411 UCC39412 UCC39413
Contextual Info: UCC29411, UCC29412, UCC29413, UCC39411, UCC39412, UCC39413 LOWĆPOWER SYNCHRONOUS BOOST CONVERTER ą SLUS245D – MARCH 2000 – REVISED NOVEMBER 2000 D 1-V Input Voltage Operation Start-Up D D D D D D D PW PACKAGE TOP VIEW Ensured Under Full Load on Main Output,

Contextual Info: UCC19411, UCC19412, UCC19413, UCC29411, UCC29412, UCC29413, UCC39411, UCC39412, UCC39413 LOWĆPOWER SYNCHRONOUS BOOST CONVERTER ą SLUS245B – MARCH 1999 REVISED JULY 2000 D 1-V Input Voltage Operation Start-Up D D D D D D D PW PACKAGE TOP VIEW Ensured Under Full Load on Main Output,

af137

Abstract: 2SB165 T0116 AC122-30 ASY32 GERMANIUM PNP LOW POWER TRANSISTORS 987T1 988T1 989T1 2SA24
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-IND EX & T EC H N IC A L SEC T IO N S A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol % ' Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others.

AC122-30

Abstract: 2N2022 2SA479 2N1646 2sa171 2SA301 AF185 SFT155 XA131 usaf521es071m
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol