HFET Search Results

FP11G

Abstract: FP1189-G
Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET

CGD942C

Contextual Info: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 01 — 7 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

4202 BD TRANSISTOR

Abstract: 4202 BD TRANSISTOR parameter BV 501 TGF4230 TGF4230-EEU bond wire gold
Contextual Info: T R I Q U I N T S E M TGF4230-EEU I C O N D U C 1.2mm Discrete HFET ● ● ● ● ● ● 1200 µm X 0.5 µm HFET T O R , I N C . 4230 Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz Suitable for High-Reliability Applications

ku vsat amplifier

Abstract: "ku band" amplifier TGA1045-EPU
Contextual Info: Advance Product Information Ku Band Power Amplifier TGA1045-EPU Key Features and Performance Primary Applications • • • • • • Ku band Satellite Ground Terminal • VSAT • Point-to-Point Radio HFET Technology 12.5 -15.5 GHz Frequency Range > 3W Nominal Pout

VP 1176 datasheet

Abstract: LD 757 ps TGF4250-EEU 3 DG 1008
Contextual Info: T R I Q U I N T S E M TGF4250-EEU I C O N D U C 4.8 mm Discr ete HFET ● ● ● ● ● ● 4800 µm x 0.5 µm HFET T O R , I N C . 4250 Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5 - GHz Suitable for high reliability applications

Contextual Info:        CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 4 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

Contextual Info: H I U I N S E M I C O N D U C T O R , T IQSt 9.6mm Discrete HFET TGF4260-EPU 9600 pm x 0.5 pm Nominal Pout of 37-dBm at 6.0 GHz Nominal Gain of 9.5-dB at 6.0 GHz # Nominal PAE of 52% at 6.0 GHz % Suitable for high reliability applications # 0,572 x 2,324 x 0,102 mm

CGD1044H

Contextual Info: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

RF transistors with s-parameters

Abstract: high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900
Contextual Info: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package

FR4 dielectric constant at 2.4 Ghz

Abstract: SHF-0189 S12VS
Contextual Info: Microstrip Segment Specifications Preliminary Preliminary SHF-0189 DC-3GHz, 0.5 Watt GaAs HFET 900 MHz Application Circuit at 25° C Vds=8V, Idq=100mA Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value Cd1,8 18 pF RO HM MCH18 series

Contextual Info: CXG1156K Power Amplifier Module for JCDMA For the availability of this product, please contact the sales office. Description The CXG1156K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony’s original p-Gate HFET process.

Contextual Info: CXG1156K Power Amplifier Module for JCDMA Description The CXG1156K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony’s original p-Gate HFET process. 10 pin LCC Ceramic Features • Single power supply operation:

Contextual Info: CXG1158K Power Amplifier Module for JCDMA For the availability of this product, please contact the sales office. Description The CXG1158K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony's original p-Gate HFET process.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 3, 1/2011 Heterostructure Field Effect Transistor GaAs HFET MMH3111NT1 Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A,

47-2001

Abstract: ANG-S21 TGF4124-EPU
Contextual Info:  4124 TGF4124-EPU • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz

Contextual Info: Stanford Microdevices Product Description SHF-0186 Stanford M icrodevices’ SHF-0186 is a AIG aAs/GaAs Heterostructure FET housed in a low cost surface-m ount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky

Contextual Info: Stanford Microdevices Product Description SHF-0598 Stanford M icrodevices’ SHF-0598 series is a AI/GaAs/ GaAs Heterostructure FET housed in a low-cost ceram icmount ceram ic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its

Contextual Info: TGF4118-EPU 18 mm Discrete HFET 4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4118-EPU RF Performance at F = 2.3 GHz

2SA1247

Abstract: 2SC3115 Gv-80
Contextual Info: NEC Y S ilico n T ra n s is to r '> ‘J =3 > m = F = r i\ r x 2SA1247 P # N P b i + ! mm « OiB, ISffiXr 1 / i « 3 y h n —; u r >*7— T v-?<r> m ìa i t lT s a -c -fo o aitl±, /J'#!:, B hFEt£<T)X’MiàfS?â*5c#14io t <"ti tz r -i -f-1 •v9u> : -120

Contextual Info: Wideband Power Amplifier Product Features • • • • Operation across 20MHz to 1000MHz 45dBm minimum Psat through all band 34dB typical small signal gain GaN HFET RFW1G33H40-28 Application • HF/VHF/UHF Package : DP-75 Description The RFW1G33H40-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.

Contextual Info: Wideband Power Amplifier Product Features • • • • Operation across 20MHz to 1000MHz 42dBm minimum Psat through all band 35dB typical small signal gain GaN HFET RFW1G35H20-28 Application • HF/VHF/UHF Package : DP-75 Description The RFW1G35H20-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.

10PIN

Abstract: CXG1158K
Contextual Info: CXG1158K Power Amplifier Module for JCDMA Description The CXG1158K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony's original p-Gate HFET process. 10 pin LCC Ceramic Features • Single power supply operation:

CGY1047

Contextual Info: CGY1047 1 GHz, 27 dB gain GaAs push-pull amplifier Rev. 01 — 30 July 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.

FR4 dielectric constant 4.6

Abstract: CD268 SHF-0289 Stanford SHF-0289 SHF 189 MCH18 822 a b
Contextual Info: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added