18NOV13 Search Results

Contextual Info: SHF–110–01–L–D–RA EHF–108–01–F–D–SM–LC F-213 REV 18NOV13 EHF–105–01–F–D–SM ESHF–125–01–L–D–SM–LC (1,27 mm) .050" EHF–125–01–L–D–SM–LC (1,27ESHF, mm) .050" SHF, EHF, ECF SERIES ESHF–105–01–L–D–SM

Contextual Info: Si8851EDB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) a, d Qg (Typ.) -20 0.0080 at VGS = -4.5 V 0.0086 at VGS = -3.7 V 0.0110 at VGS = -2.5 V 0.0185 at VGS = -1.8 V -16.7 -16.1 -14.2

Contextual Info: TLWR8600, TLWR8601, TLWY8600 www.vishay.com Vishay Semiconductors TELUX LED FEATURES • High luminous flux • Supreme heat dissipation: RthJP is 90 K/W • High operating temperature: Tamb = -40 °C to +110 °C • Meets SAE and ECE color requirements for the

Contextual Info: VBT30L60C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: SMA6F5.0A thru SMA6F20A www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES SlimSMATM • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Uni-directional only • Excellent clamping capability

Contextual Info: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses

Contextual Info: HML www.vishay.com Vishay Techno Thick Film Resistors, Industrial, Miniature, Axial-Leaded FEATURES • Small case size: 0.073" x 0.036" • Rugged plastic housing • Non-inductive design • 100 % pure tin solder coating on nickel leadwires. Suitable for soldering and welding.

Contextual Info: RCWE www.vishay.com Vishay Dale Thick Film Surface Mount Chip Resistors, Wraparound, Extremely Low Value 0.01  to 0.976  FEATURES • Extremely low resistance values  (0.01  to 0.976 ) • Suitable for current sensing and shunts • Metal glaze on high quality ceramic

Contextual Info: VT1060C-M3, VIT1060C-M3, VT1060CHM3, VIT1060CHM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses

Contextual Info: RCWL www.vishay.com Vishay Dale Thick Film Surface Mount Chip Resistors, Wraparound, Low Value 0.1  to 0.91  FEATURES • Low resistance values (0.1  to 0.91 ) • Suitable for current sensing and shunts Available • Metal glaze on high quality ceramic

Contextual Info: SAC5.0 thru SAC50 www.vishay.com Vishay General Semiconductor Low Capacitance TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • 500 W peak pulse power capability with a 10/1000 s waveform, repetitive rate duty cycle : 0.01 %

Contextual Info: SPICE Device Model Si7655ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: VBT30L60C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V Qg max. (nC) 0.064 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

VS-GT400TH120U

Contextual Info: VS-GT400TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V, 400 A FEATURES • Low VCE on trench IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C

Contextual Info: SiP32419, SiP32429 Vishay Siliconix 28 V, 56 m, Load Switch with Programmable Current Limit and Slew Rate Control OPERATION DESCRIPTION FEATURES SiP32419 and SiP32429 are load switches that integrate multiple control features that simplify the design and increase

Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) • • • • • 0.145 122 Qgs (nC) 21 Qgd (nC)

Contextual Info: P4KE530, P4KE550 www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional only • Excellent clamping capability • Very fast response time • Low incremental surge resistance