DDR SDRAM
Abstract: DDR200 M383L5628MT1-CA0 SDRAM 128M SAMSUNG
Contextual Info: SERIAL PRESENCE DETECT M383L5628MT1-CA0 Organization :256M x 72 Composition :128M x 4 *18ea *2 Used component part # :K4H1G0638M-TCA0 # of rows in module:2 Rows # of banks in component :4 banks Feature :1700ml height & double sided component Refresh :8K/64ms
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DDR266
Abstract: DDR333 42H33H
Contextual Info: SERIAL PRESENCE DETECT M381L6423ETM-CB0/CA2/CAA/CB3 Organization :64M x 72 Composition :32M x 8 * 18ea Used component part # :K4H560838E-TCB0/A2/AA/B3 # of rows in module:2 Rows # of banks in component :4 banks Feature :1250mil height & double sided Refresh :8K/64ms
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M393T2950CZ3-CD5
Abstract: K4T51043QC-ZCD5 DDR2-400 DDR2-533
Contextual Info: SERIAL PRESENCE DETECT M393T2950CZ3-CD5/CCC Organization :128M x 72 Composition :128M x 4 * 18ea Used component part # :K4T51043QC-ZCD5/CC # of rows in module:1 Row # of banks in component :4 banks Feature :30mm height & double sided component Refresh :8K/64ms
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M312L6420ETS-CB0
Abstract: K4H560438E-TCB0 DDR266 DDR333
Contextual Info: SERIAL PRESENCE DETECT M312L6420ETS-CB0/CA2/CAA/CB3 Organization :64M x 72 Composition :64M x 4 * 18ea Used component part # :K4H560438E-TCB0/A2/AA/B3 # of rows in module:1 Row # of banks in component :K4H560438E-TCB0/A2/AA/B3 Feature :1200mil height & double sided
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m312l6420ets-cb0/ca2/caa/cb3k4h560438e-tcb0/a2/aa/b31200mil8k/64ms+5ddr266ddr333128bytesm312l6420ets-cb0k4h560438e-tcb0
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K4H510438D-ZCB3
Abstract: DDR333 DDR400 K4H510438 cb3 19
Contextual Info: SERIAL PRESENCE DETECT M312L2920DZ3-CB3/CCC Organization :128M x 72 Composition :128M x 4 * 18ea Used component part # :K4H510438D-ZCB3/CC # of rows in module:1 Rows # of banks in component :4 banks Feature :1200mil height & double sided Refresh :8K/64ms Bin Sort : B3 DDR333@CL=2.5 , CC(DDR400@CL=3)
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SSTE32882
Abstract: samsung dimm DDR3 SPD HCH9 CF804 LVDDR3 K4B1G0846E samsung ddr3 RC10 RC11 RC12
Contextual Info: SERIAL PRESENCE DETECT M393B5673EH1-CF704/CF804/CH904/CK004 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component
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m393b5673eh1-cf704/cf804/ch904/ck004k4b1g0846e-hcf7/hcf8/hch9/hck08k/64mscf704+10sste32882samsung dimm ddr3 spdhch9cf804lvddr3k4b1g0846esamsung ddr3rc10rc11rc12
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DDR2-667
Abstract: K4T56083QF-ZCE6 M391T6453FZ0-CE6 4350H
Contextual Info: SERIAL PRESENCE DETECT M391T6453FZ0-CE6 Organization :64M x 72 Composition :32M x 8 * 18ea Used component part # :K4T56083QF-ZCE6 # of rows in module:2 Row # of banks in component :4 banks Feature :30mm height & double sided component Refresh :8K/64ms Bin Sort : E6 DDR2-667@CL=5
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inphi
Abstract: samsung dimm DDR3 SPD DDR3 DIMM SPD JEDEC samsung DDR3 SDRAM 2GB ddr3 spd samsung samsung ddr3 RC10 RC11 RC12 K4B2G0446B-HCF7
Contextual Info: SERIAL PRESENCE DETECT M393B5270BH1-CF701/CF801/CH901/CK001 Organization : 512M x 72 Composition : 512M x 4 * 18ea Used component part # : K4B2G0446B-HCF7/HCF8/HCH9/HCK0 # of rows in module : 1 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component
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m393b5270bh1-cf701/cf801/ch901/ck001k4b2g0446b-hcf7/hcf8/hch9/hck08k/64msgs-04+13cf701cf801ch901inphisamsung dimm ddr3 spdddr3 dimm spd jedecsamsung ddr3 sdram 2gbddr3 spd samsungsamsung ddr3rc10rc11rc12k4b2g0446b-hcf7
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samsung dimm DDR3 SPD
Abstract: SSTE32882 inphi samsung ddr3 RC10 RC11 RC12 HCH9 ddr3 spd samsung inphi* rcd
Contextual Info: SERIAL PRESENCE DETECT M393B5673EH1-CF701/CF801/CH901/CK001 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component
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m393b5673eh1-cf701/cf801/ch901/ck001k4b1g0846e-hcf7/hcf8/hch9/hck08k/64msgs04-b2+12cf701vdd36samsung dimm ddr3 spdsste32882inphisamsung ddr3rc10rc11rc12hch9ddr3 spd samsunginphi* rcd
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Contextual Info: ?yaròwra 82 53922 SILICON SENSORS’ INC j 5 3 ^ 5 B DODOHfib Ö [ T-41 - 2 1 : SILICON SENSÖRS, INC. v ^fi igtiway ,18East >>< JpodgeVJife, W ìs c Q n s fò '^ ^ ^ S f : Telephone: 608 -935-2707 . ^ TWX:91Ó-280-143Óv : ; I SILICON SENSORS SVAD 2 Gallium Aluminum Arsenide Light
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Contextual Info: LED Cluster KODENSHI KSL-2840MLOW-S This specification is applied to 40-type solid-state lamp staring-sample assembled by high-bright LEDs-RED 10EA, Y-GREEN LED 18EA. This product is for the part of ourdoor LED bill-board. FEATURES •Display dot-size : 40mm
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M312L2920BG0-CCC
Abstract: M312L2920BG0 DDR266 DDR333 DDR400
Contextual Info: SERIAL PRESENCE DETECT M312L2920BG0-CCC Organization :128M x 72 Composition :128M x 4 * 18ea Used component part # :K4H510438B-GCB0/A2/AA/B3/C4/CC # of rows in module:1 Rows # of banks in component :4 banks Feature :1,125mil height & double sided Refresh :8K/64ms
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DDR2-400
Abstract: DDR2-533
Contextual Info: SERIAL PRESENCE DETECT M391T6453FZ3-CD5/CCC Organization :64M x 72 Composition :32M x 8 * 18ea Used component part # :K4T56083QF-ZCD5/CC # of rows in module:2 Row # of banks in component :4 banks Feature :30mm height & double sided component Refresh :8K/64ms
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m391t6453fz3-cd5/ccck4t56083qf-zcd5/cc8k/64msddr2-533+2ddr2-400128bytes
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54-TSOP
Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
Contextual Info: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004
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DDR2-400
Abstract: DDR2-533 K4T56043QF K4T56083QF
Contextual Info: 256MB, 512MB, Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 256MB, 512MB, Registered DIMMs DDR2 Registered DIMM Ordering Information
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DDR400
Abstract: K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC
Contextual Info: 256MB, 512MB, 1GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module DDR400 Module 60FBGA 184pin Registered Module based on 256Mb E-die (x4, x8) with 1,200mil Height Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB, 1GB Registered DIMM DDR SDRAM
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K4H560838E
Abstract: DDR333
Contextual Info: 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 April, 2003
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M390S2858DTU
Abstract: M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design
Contextual Info: M390S2858DTU PC133/PC100 Low Profile Registered DIMM M390S2858DTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858DTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858DTU consists of eighteen CMOS Stacked
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m390s2858dtupc133/pc100128mx72128mx4+8400mil18-bitsm390s2858dtu-c1hm390s2858dtu-c1lm390s2858dtu-c7am390s2858dtu-c7c10d4lpc133 registered reference design
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dm 533
Abstract: K4T5108 M393T5750BS0-CD5 DDR2-533
Contextual Info: 512MB, 1GB, 2GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 512MB, 1GB, 2GB Registered DIMMs DDR2 Registered DIMM Ordering Information
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M368L6523DUS
Abstract: L2923D
Contextual Info: 256MB, 512MB, 1GB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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b1a12
Abstract: M390S6450DTU-C7A M390S6450DTU M390S6450DTU-C1H M390S6450DTU-C1L M390S6450DTU-C7C PC133 registered reference design
Contextual Info: M390S6450DTU PC133/PC100 Low Profile Registered DIMM M390S6450DTU SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450DTU is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S6450DTU consists of eighteen CMOS 64Mx4 bit
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m390s6450dtupc133/pc10064mx7264mx4+8400mil18bitsb1a12m390s6450dtu-c7am390s6450dtu-c1hm390s6450dtu-c1lm390s6450dtu-c7cpc133 registered reference design
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M390S6453DT1
Abstract: M390S6453DT1-C7A M390S6453DT1-C7C PC133 registered reference design
Contextual Info: PC133 Registered DIMM M390S6453DT1 M390S6453DT1 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 32Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S6453DT1 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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K4T51083QC
Abstract: Samsung 546
Contextual Info: 512MB, 1GB, 2GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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b1a12
Abstract: PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A
Contextual Info: 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004
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256mb512mb168pin72-bit+11k4s510632eb1a12pc133 sdram registered dimm 512mb samsungpc133 sdram 512mb ecc unbufferedk4s560832em390s2858et1-c7am390s2858etu-c7am390s3253et1-c7am390s3253etu-c7am390s6450et1-c7am390s6450etu-c7a
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