185 TO3 Search Results

185T2B

Abstract: BDY28B 185t2 185T2A bdy27 BDY28C BDY28A 185T2C BDY28 183T2
Contextual Info: BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage

KM74B4006

Contextual Info: PRELIMINARY KM74B4006 Synchronous SRAM 1M x 4 Bit Synchronous Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 1 0 ,12,15 ns Max. • Low Power Dissipation KM74B4006J-10 : 190 mA(MAX.) KM74B4006J-12 : 185 mA(MAX.) KM74B4006J-15 : 180 mA(MAX.)

apex pa26

Abstract: APEX pa21 PA26 audio amp MSK184 PA26 transistor smd 183 NV SMD TRANSISTOR MSK182 MSK183 MSK185
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 182/183/ 184/185 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: MSK185 Replaces APEX PA26 MSK184 Replaces APEX PA21 Available to DSCC SMD 5962-92152

Contextual Info: SCHOTTKY BARRIER DIODE C25P09Q C25P10Q 27.7A /90— 100V FEATURES °Similar to TO-247AC TO-3P Case 5.3(209) 4.7(185) 5.71224) 5.3(.208) • Dual Diodes - Cathode Common • Low Forward Voltage Drop "Low Power Loss, High Efficiency 'iTLT 2.2(.087M ] f k i l H

05-08-1330

Contextual Info: H Package 3-Lead TO-39 Metal Can Reference LTC DWG # 05-08-1330 .350 – .370 (8.890 – 9.398) .305 – .335 (7.747 – 8.509) .050 (1.270) MAX .165 – .185 (4.191 – 4.699) REFERENCE PLANE * .016 – .019* (0.406 – 0.483) DIA .500 (12.700) MIN .200

Reference LTC DWG

Contextual Info: H Package 4-Lead TO-39 Metal Can Reference LTC DWG # 05-08-1331 .350 – .370 (8.890 – 9.398) .305 – .335 (7.747 – 8.509) .050 (1.270) MAX .165 – .185 (4.191 – 4.699) REFERENCE PLANE * .016 – .019* (0.406 – 0.483) DIA .500 (12.700) MIN .200

C25P20F

Abstract: C25P10F C25P10FR C25P20FR
Contextual Info: FAST RECOVERY DIODE C25P10F C25P20F C25P10FR C25P20FR 27.7A/100~ 200V/trr : 50nsec FEATURES 5 .3 1 2 0 9 4.7 185 ) « Similar to TO-247AC (TO-3P) Case ° Dual Diodes - Cathode Common and Anode Common (Type - R ) ° Ultra - Fast Recovery ° Low Forward Voltage Drop

185t2

Abstract: bdy28 BF 184 184T2 BDY26 BDY27 185T2A 185T2B
Contextual Info: * B D Y 2 6 183 T2 *B D Y 2 7 184 12 *B D Y 28 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM , MESA DIFFUSES ^ Preferred device Dispositif recommandé LF large signal power amplification 180 V 200 V BDY 26 , 183 T2 BDY 27 , 184 T2

C25P20F

Abstract: c25p UAA 180 C25P10F C25P10FR C25P20FR
Contextual Info: FAST RECOVERY DIODE 27.7A /10 0 ~ 2 0 0 V /trr:5 0 n so c C25P10FR C25P20FR 5.3 .209 4.7( 185) FEATURES HP- » Similar to TO-247AC (TO-3P) Case ° Dual Diodes - Cathode Common and Anode Common (Type - R ) ° Ultra - Fast Recovery 2.2(.087H 3.2(.126)~ |0.8(.031) MAX

74SZ125

Abstract: quanta LTN150U2-L02 quanta computer sharp lq150x1lh82 QUANTA KT5 SAMSUNG C541 LTN141 N20122PS800-0805 LQ150X1LH82
Contextual Info: 5 4 3 2 1 MODEL Model 1A KT5 MB 2A D 3A FIRST RELEASE REFERENCE THE ECN E200203-324 REFERENCE THE ECN E200203-382 3C REFERENCE THE ECN E200204-185 3 Page PRELIMINARY RELEASE 3B 3D KT5 CHANGE LIST REV REFERENCE THE ECN E200204-457 REFERENCE THE ECN E200 C B

FAG 32 diode

Abstract: FAG 14 diode 1AM Diode
Contextual Info: SCHOTTKY BARRIER DIODE C30P05Q C30P06Q 33A/50~ 60V FEATURES 4.7 .185 ° Similar to TO-247AC (TO-3P) Case n ' J 15.9C.«26)_ 15.3t.602) l _ 5.7^.224) ° Dual Diodes - Cathode Common S T~ i) - è Y f y \ ° Low Forward. Voltage Drop 4.31169) 3.7(.145) l ° Low Power Loss, High Efficiency

SDT7601

Contextual Info: 8 3 6 8 6 0 2 SO L IT RO N D E V I C E S ELEMENT NUMBER flb INC 86 D 0 2 5 7 5 dF | fl3hfib02 0 0D 5 S7 S fi |~_ 185 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum

2SC2222

Abstract: 2SC2093 2sc2103a 2SC2150 2SC2106 2SC2094 2SC2098 203d6 2SC2148 2sc2188
Contextual Info: - 116 - MXËfê su z rfi 3$ Ta=25tî, *EP(ÏTc=25^ m Vq e q VcEQ Ic(oc) Pc Pc* (V) (V) (A) (ïï) (W) 0. 5 10 (Ta=25tî) & (max) Vc e (V) 20 200 6 0.1 20 100 5 4 20 185 5 5 28 2SC2094 H # HF PA 40 3.5 30 2000 2SC2097 H * HF PA 50 15 150 5000 2SC2098 * 2

transistor bf 184

Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
Contextual Info: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958

Contextual Info: NTE2669 Silicon NPN Transistor Horizontal Deflection High Speed Switch TO3P Full Pack Description: The NTE2669 is a Horizontal Deflection Output for High Resolution Display−Color TV’s in High Speed Switching Applications. Features: D High Voltage D Low Saturation Voltage

SDT13305

Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251

sml60g60an

Contextual Info: bGE T> SEHELAB PLC = r r = “ l U l “ / ^ m 6133107 \ 000 0TD 2 SSG • S M L B M j ^ TO3j y O S P O W I G B T SEM E M ■ 4 ^ ' 3 1 -1 1 SML60G60AN LAB E R 600V 60A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

SDT85502

Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
Contextual Info: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913

SDT84

Contextual Info: 8 3 6 8 6 0 2 S O L IT R O N D E V I C E S INC 95 D S0LITR0N DEVICES INC TS 02766 D T' J ?3- DE ö 3 h ö b ü 2 □ 00S7t.b 4 Devices. Inc. PLANAR POWER TRANSISTORS M [continued] (A fT MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 0.30 0.30 0.30 0.30 0.25 2.0

RP1094

Abstract: RP1105 fc69 RFM SAW Oscillator
Contextual Info: RP1105 • • • • • Ideal for 639.9 or 640.0 MHz Oscillators Nominal Insertion Phase Shift of 180° at Resonance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case Complies with Directive 2002/95/EC RoHS Pb 640.0 MHz SAW Resonator The RP1105 is a two-port, 180° surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency oscillators operating at

r 639 r 640

Abstract: r 639 saw resonator RP1094 RP1105
Contextual Info: RP1105 640.0 MHz • • • • SAW Resonator Ideal for 639.9 or 640.0 MHz Oscillators Nominal Insertion Phase Shift of 180° at Resonance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case The RP1105 is a two-port, 180° surface-acoustic-wave SAW resonator in a low-profile TO39 case. It provides reliable, fundamental-mode, quartz frequency stabilization

Contextual Info: RP1105 • • • • Ideal for 639.9 or 640.0 MHz Oscillators Nominal Insertion Phase Shift of 180° at Resonance Quartz Stability Rugged, Hermetic, Low-Profile TO39 Case 640.0 MHz SAW Resonator The RP1105 is a two-port, 180° surface-acoustic-wave SAW resonator in a low-profile TO39 case. It provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency oscillators operating at or