177C Search Results

m177

Abstract: M 177
Contextual Info: •1 DOUBLE-BALANCED MICROWAVE MIXER 2 .0-8.0 GHz MODELS M-177/M-177C 5 dB Typical Midband Conversion Loss 25 dB Typical Midband L-R Isolation Operable with Starved LO Guaranteed Specifications* From -5 5 °C to +85°C Frequency Range RF, LO Ports IF Port (3 dB BW)

a3150 ic

Abstract: A2918SW ULx2003 K238 a3150 A3964SB PS-0031 A2919SLB A3845xLW A3144
Contextual Info: 3 4 GROUND 2 OUTPUT 1 SUPPLY GROUND GROUND 4 CAPACITOR INTERNAL CONNECTION 3 OUTPUT OUTPUT 2 SUPPLY SUPPLY 1 AMS-177C PINOUT DIAGRAMS Vcc X + 1 Dwg. PH-014-5 2 GROUND 1 Vcc Vcc INTERNAL CONNECTION CURRENT OUTPUT GROUND ATS610LSC SUPPLY TEST POINT 4 GROUND

UDN2983A equivalent

Abstract: UDN2961W a3150 ic UGN3235K A3150 ULx2003 UDN2580A A2918SWH a3141 A3964SB
Contextual Info: 3 4 GROUND 2 OUTPUT 1 SUPPLY GROUND GROUND 4 CAPACITOR INTERNAL CONNECTION 3 OUTPUT OUTPUT 2 SUPPLY SUPPLY 1 AMS-177C† PINOUT DIAGRAMS Vcc X + 1 Dwg. PH-014-5 2 GROUND 1 Vcc Vcc INTERNAL CONNECTION CURRENT OUTPUT GROUND ATS610LSC SUPPLY TEST POINT 4 GROUND

Hitachi DSA00776

Abstract: 177c HM51W4400B HM51W4400BLS-7 HM51W4400BLS-8 HM51W4400BS-7 HM51W4400BS-8
Contextual Info: HM51W4400B Series 1,048,576-word x 4-bit Dynamic Random Access Memory ADE-203-177C Z Rev. 3.0 Nov. 17, 1995 Description The Hitachi HM51W4400B is a CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM51W4400B has realized higher density, higher performance and various functions by employing 0.8

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

17CA

Abstract: M68HC16 MC16S2CPU20B1 MC16S2CPU25B1 MC68HC16S2 MC68HC16S2CPU20 MC68HC16S2CPU25 SPMC16S2CPU20 SPMC16S2CPU25 37A6
Contextual Info: Order this document by MC68HC16S2TS/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC68HC16S2 Technical Summary 16-Bit Modular Microcontroller 1 Introduction The MC68HC16S2 is a high-speed 16-bit microcontroller. It is a member of the MC68300/M68HC16 family. M68HC16 microcontrollers are built up from standard modules that interface through a common intermodule bus IMB . Standardization facilitates rapid development of devices tailored for specific applications.

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R A LL C O P Y R IG H T B Y TYCO E L E C T R O N IC S 2 P U B L IC A T IO N IN TE R N A TIO N A L LOC RIGHTS R E S E R VE D . D IS T REVISIO N S C O R P O R A T IO N . D E S C R IP T IO N R EVISED

Si4450DY

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Contextual Info: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

On semiconductor date Code sot-223

Abstract: BCP56 CBVK741B019 F63TNR F852 PN2222A pcb thermal sot-223 4 layer sot-223 package dimensions
Contextual Info: BCP56 BCP56 C B C E SOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 39. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

stc 1740

Abstract: MOTOROLA SCR 1725 FQ01E IC CS 3758 GP E.Z. AOCB icf mc 1732 ep V74 1709 ati c 17e1 ha 1758 immo off
Contextual Info: M U I U liU L r t by MCB8HC916Y1TS/D • SEMICONDUCTOR TECHNICAL DATA MC68HC916Y1 Technical Summary 16-Bit Modular Microcontroller 1 Introduction The MC68HC916Y1 microcontroller MCU is a high-speed 16-bit device that is upwardly code compatible with M68HC11 controllers. It is a member of the M68300/68HC16 Family of modular

BF 179C

Abstract: scf 2741 dt mc68hc16 kck capacitor LM 2741 PAL 002a Nippon capacitors M68HC11 M68HC16 MC68HC16X1CTH
Contextual Info: Order this document by MC68HC16X1TS/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC68HC16X1 Technical Summary 16-Bit Modular Microcontroller 1 Introduction The MC68HC16X1 m icrocontroller MCU) is a high-speed 16-bit device that is upwardly code compatible with M 68HC11 controllers. It is a member of the M68300/68HC16 Family of modular

SI9955DY

Abstract: fairchild NDS 1182
Contextual Info: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

transistor 2N5461

Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

Contextual Info: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.2 A, 200 V. RDS ON = 0.120 Ω @ VGS = 10 V

Contextual Info: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

FDR835N

Abstract: 831N
Contextual Info: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

PART NUMBER MARKING SC70-6

Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
Contextual Info: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching

Contextual Info: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

2539a

Abstract: IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL
Contextual Info: FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • These MOSFETs feature faster switching and lower gate

Contextual Info: FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

Contextual Info: FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

F852 transistor

Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

Contextual Info: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

Contextual Info: FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate