173 MHZ RF CHIP Search Results

Contextual Info: nRF24LU1 Single Chip 2.4GHz Transceiver with USB Microcontroller and Flash Memory Product Specification v1.1 Key Features • • • • • • • • • • • • • • • • • • • • • • • • • nRF24L01 compatible RF transceiver

24lu1

Abstract: nRF24L01 pa lna WJ88 C600-C61F nRF24LU1 nRF24l01 mouse nRF24L01 PRX C770 arcon arc em c7aa
Contextual Info: nRF24LU1 Single Chip 2.4GHz Transceiver with USB Microcontroller and Flash Memory Product Specification v1.1 Key Features • • • • • • • • • • • • • • • • • • • • • • • • • nRF24L01 compatible RF transceiver

transistor C4

Abstract: BFR740L3RH Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier
Contextual Info: Application Note, Rev. 1.0, January 2009 Application Note No. 173 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications;

equivalent for transistor tt 2206

Abstract: equivalent transistor TT 2206 transistor tt 2206 MRF163 TT 2206 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 25 Watts

XRF184

Abstract: MRF184 173 MHz RF CHIP 305 Power Mosfet MOTOROLA
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistor MRF184 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

MRF184

Abstract: MRF184S MRF184SR1 173 MHz RF CHIP
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

Motorola 0936

Abstract: 305 Power Mosfet MOTOROLA 173 MHz RF CHIP
Contextual Info: MOTOROLA . . _ Order this document byMRFit>4/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF184 RF POWER Field-Efffect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequen­ cies to 1.0 GHz. The high gain and broadband performance of this device

a06t

Abstract: A07T MRF1508 AN721 MRF1508T1 diode zener Z11 AN4005 A05T AN211A 200 pF air variable capacitor
Contextual Info: MOTOROLA MRF1508 Cancelled The MRF1508 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment.

a06t

Abstract: MRF1508 A07T MRF1508T1 AN721 A05T AN211A 173 MHz RF CHIP 34 0010 TRANSISTOR 187
Contextual Info: MOTOROLA Order this document by MRF1508/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1508 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

A07T

Abstract: MRF1508 MRF1508T1 a06t 520 uF variable capacitor motorola AN211A A05T-5 MRF1508 equivalent Nippon capacitors RF1508
Contextual Info: MOTOROLA RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY The MRF1508 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source

RF184

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POW ER Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen­ cies to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen­ cies to 1.0 GHz. The high gain and broadband performance of these devices

945 mosfet n

Abstract: motorola MOSFET 935 mrf184 MRF184S MRF184SR1 173 MHz RF CHIP
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.

MRF184

Abstract: MRF184R1 MRF184SR1 173 MHz RF CHIP
Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

MRF184

Abstract: MRF184R1 MRF184SR1
Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices

motorola MOSFET 935

Abstract: XRF184 MRF184 MRF184S 173 MHz RF CHIP
Contextual Info: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

CGB7016-BD

Abstract: CGB7016-BD-000V DM6030HK TS3332LD tanaka gold wire current
Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7016-BD Features Chip Layout Low Operating Voltage: 5V 34.0 dBm Output IP3 @ 850 MHz 3.8 dB Noise Figure @ 850 MHz 22.4 dB Gain @ 850 MHz 18.4 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7016-BD Features Chip Layout Low Operating Voltage: 5V 34.0 dBm Output IP3 @ 850 MHz 3.8 dB Noise Figure @ 850 MHz 22.4 dB Gain @ 850 MHz 18.4 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

VK200 19 4B INDUCTOR

Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

MOTOROLA 934

Abstract: MOTOROLA 935 MRF184 MRF184R1 MRF184SR1
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA O rder this docum ent by M RF184/D SEMICONDUCTOR TECHNICAL DATA MRF184 MRF184S, R1 The RF MOSFET Line RF POWER Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen­

UNELCO

Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single