A06T Search Results

Contextual Info: 4 2 1 REVISIONS SYM DISCRETION DATE APPROVED SYM DISCRETION DATE APPROVED A A A A ••C U S TO M E R DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! V1.1 3 12.50 M 10.40 l 5.00 7.00 9.00 PCB LAYOUT BOTTOM VIEW ORDER INFORMATION M D 005-P a06T G ft

Contextual Info: 8 IN IS OMNINO r s W W L I f l W . 1 I* I wmjumo n o * m l i c a t i c m > 1 •r m m u m «« • to • AD 39 «VISIONS □ □ 1 18 I REVISEDPER A06T58 * A SPACES AT U£Ui A 0.41 HI C.016] 1 .2 2 * 0 . A C. 048*.0033 1 i L r r 4«96±0• os-f i.196±.002J

a06t

Abstract: hfa08tb60pbf
Contextual Info: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

Contextual Info: 4 3 V1.1 SYM A A DISCRETION ••C U S T O M E R 1 5 .1 0 3 .8 0 DATE D R A W IN G 2 REVISIONS APPROVED SYM A A 1 DISCRETION DATE APPROVED F O R R E F E R A N C E O N L Y , S A M P L E S A P P R O V A L A R E R E Q U IR E D !! 1 2 .9 0 PCB EDGE < > 2 .6 0

Contextual Info: V1.1 SYM A A ♦♦CUSTO M ER 12.90 14.00 DISCRETION D R A W IN G DATE FO R REVISIONS APPROVED SYM A A REFERANCE DISCRETION DATE O NLY, SAM PLES A PPRO VAL ARE APPROVED R E Q U IR E D !! 13.50 PCB EDGE □ o o D 5 □ 2 1 3 3-02.20 / A A ' A !> 2.60 6.80 0.4

A07T

Abstract: MRF1508 MRF1508T1 a06t 520 uF variable capacitor motorola AN211A A05T-5 MRF1508 equivalent Nippon capacitors RF1508
Contextual Info: MOTOROLA RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY The MRF1508 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source

Contextual Info: SPECIFICATION OF FLC□□□□□□NLCL SERIES FEATURES 1. Very strong solderability by flow soldering , soldering iron. 2. Highly accurate dimensions , can be mounted automatically. 3. Terminals are highly resistant to pull forces. 4. Highly resistant to mechanical shocks and pressure.

a06t

Abstract: A07T MRF1508 AN721 MRF1508T1 diode zener Z11 AN4005 A05T AN211A 200 pF air variable capacitor
Contextual Info: MOTOROLA MRF1508 Cancelled The MRF1508 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment.

a06t

Abstract: MRF1508 A07T MRF1508T1 AN721 A05T AN211A 173 MHz RF CHIP 34 0010 TRANSISTOR 187
Contextual Info: MOTOROLA Order this document by MRF1508/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1508 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: 4 3 V1.1 SYM A A 1 4 .0 DISCRETION DATE 2 REVISIONS APPROVED SYM A A 1 DISCRETION DATE APPROVED 4 .7 0 ••C U S T O M E R DRA W IN G FOR R EFER AN C E O N LY , SA M P LE S A P P R O V A L ARE R EQ U IR ED !! - rd P.C.B LAYOUT BOTTOM VIEW o t TESTER

Contextual Info: 4 3 V1.1 SYM A A DISCRETION ••C U S T O M E R 15.1 DATE D R A W IN G 2 REVISIONS APPROVED SYM A A 1 DISCRETION DATE APPROVED F O R R E F E R A N C E O N L Y , S A M P L E S A P P R O V A L A R E R E Q U IR E D !! 1 3 .5 PCB EDGE e 3 - 0 2 .2 6 -0 0 .9

MT5C1008DCJ-45/SMD a06t transistor

Contextual Info: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

a06t

Abstract: hfa08tb60pbf B120 HFA08TB60 IRFP250
Contextual Info: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

M5M82C37AP-5

Abstract: m5m82c37 M5L8085ap 5L8085 M5L8085A
Contextual Info: M ITSU BISH I LSIs M5M82C37AP-5/FP-5/J-5 CMOS PROGRAMMABLE DMA CONTROLLER DESCRIPTION The M 5 M 8 2 C 3 7 A P -5 is a prog ram m able 4-ch an n e l D M A D ire c t M e m o ry A cc e s s controller. This d e v ic e Is s pecially d e s ig n e d to sim plify data transfer at high transfer rate for