1710MA Search Results

Contextual Info: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRH3012T1R0NNV Features Item Summary 1.0 H(±30%), 2200mA, 1710mA Lifecycle Stage

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series H type NRH3012T1R0NN Features Item Summary 1.0 H(±30%), 2200mA, 1710mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

D0-35

Abstract: u327
Contextual Info: Enhanced Memory Systems Inc. DM1M36SJ6/DM1M32SJ6 Multibank EDO 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multilayer substrate. Eight DM2242

Contextual Info: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM r ^ M T R O N Product Specification Features Architecture • 2KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

U716

Abstract: U6915 1178Q
Contextual Info: H Enhanced DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM IVfemoiy Suterns I x . Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns Axessto Any New Page

2mb 72-pin simm

Abstract: 10782
Contextual Info: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM F ^ M T R O N Product Specification Features • 2Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

gigabyte 945

Abstract: gigabyte 945 circuit diagram U727 edram
Contextual Info: Enhanced Memory Systems Inc. DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multilayer substrate. Eight DM2202

Contextual Info: Lithium Ion UF484462ST Features & Benefits Specifications • High capacity model High charge voltage • High energy density and voltage • Long, stable power with a flat discharge voltage • Ideal for portable communications, portable computing, and robotics.

Contextual Info: Valve Regulated Lead-Acid Rechargeable Battery BP18-12 The battery is constructed by plates, separators, safety valves and container. Since the electrolyte is held by a glassmat separator and plates, the battery can be used in any direction and position without leakage.

D0-35

Abstract: DM224
Contextual Info: DM2M36SJ6/DM2M32SJ6 Multibank EDO 2Mbx36/2Mbx32 Enhanced DRAM SIMM Enhanced Memory Systems Inc. Product Specification Features Architecture The DM2M36SJ6 achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on both sides of the multi-layer

CAL03

Abstract: ramtron DM2202J
Contextual Info: Enhanced Memory Systems Inc. DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM2M36SJ achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28pin plastic SOJ packages, on both sides of the multi-layer

Contextual Info: Lithium Ion UF485155S Features & Benefits Specifications • High energy density and voltage • Long, stable power with a flat discharge voltage • Ideal for portable communications, portable computing, and robotics. Rated capacity 1 Min. 1660mAh Capacity(2)

Contextual Info: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced DRAMSIMM r ^ M T R O N Product Specification Features Architecture • 4KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

U615

Abstract: DM 0365 R pin EQUIVALENT U716 U1018
Contextual Info: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32EnhancedDRAMSIMM r ^ p M T R O N Features • 4Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

U312

Contextual Info: Enhanced DM2M3SSJ6m 2M32SJ6MuWankBX 2Mbx3V2Mbx32EnhancedDRAMSIMM Product Specification Features • 16KByte SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache) ■ Fast DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes

vh41

Abstract: u327
Contextual Info: DM 1M36SJ & DM 1M32SJ 1Mbx 36/1Mbx 32EnhancedDRAMSIMM A / r ^ M I R O N Features Preliminary Datasheet Architecture m Compatibility with JEDEC • ■ ■ ■ ■ ■ 1M x 36 DRAM SIMM Configuration Allows Performance Upgrades in System Integrated 512 \ 36 SRAM Cache Row Register Allows 15ns

write-verify

Abstract: u327
Contextual Info: ^ M DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM T T R O IN J •eatures Architecture The DM1M3 >S| achieves I Mb \ ,i(> density b\ mounting nine 1M 1 2kliyte SRAM Cache Memon lor 1ms Random Reads W illiin a Page \ I ICDRAMs, packaged in 2N-pin plastic SOJ packages, on a multi­

Nippon capacitors

Abstract: 24C02N
Contextual Info: HB56U W1672EJN Series, HB56UW1664EJN Series 16777216-word x 72-bit High Density Dynamic RAM Module 16777216-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-643A Z Rev. 1.0 Jun. 9, 1997 Description The HB56UW1672EJN Series, HB56UW1664EJN Series belong to 8-byte DIMM (Dual in-line Memory

MAU250

Abstract: u225 MAU2
Contextual Info: •I H Enhanced Memory Systems Inc. Features T0 Q7 SH 7 GODÜOTO bTfi ■ DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32EnhancedDRAMSIMM Product Specification Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a

1850R

Abstract: dh 1117 U514 0QQ011
Contextual Info: • H Enhanced Memory Systems Inc. Features ciD07S47 DDDG11G 21b DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced DRAMSIMM Product Specification Architecture The DM2M36SJ achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on both sides

Contextual Info: Enhanced IV f e m o iy S y s t e m s DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM In c . Product Specification Features A rchitecture The DM2M36SJ • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns A sess to Any New Page

DM 0365 R pin EQUIVALENT

Contextual Info: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM ^ I M T R O I M Features Architecture rile DM2M iliSJ achieves 2Mb x 36 density by mounting 18 1M x i I.DRAVls, packaged in 28-pin plastic SOJ packages, on both sides of the multi-layer substrate. Sixteen