170NH Search Results

AH43308A-R17KU

Abstract: AH43308C-R18KU AH43308A-R21KU
Contextual Info: RoHS COMPLIANT AH43308 Series HF COMPLIANT 1. Features: • Ferrite based SMD Inductor with lower core loss at high frequency application. · Inductance Range:170nH to 370nH ,Custom values are welcomed. · High current output chokes, upto 71 Amp with max. 20% roll off.

Contextual Info: SMT POWER INDUCTORS Power Beads - PA1320NL Series Current Rating: Over 50Apk Inductance Range: 170nH to 300nH Height: 6.5mm Max Footprint: 10.4mm x 8.0mm Max Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 7 Inductance @0ADC nH ±20%

DL47B3A

Abstract: GR-468-CORE dfb 10mw cw DWDM laser 1610
Contextual Info: 1 Technical Data Sheet February 2002 FIBEROPTICS DIVISION DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module Features ¾ High-performance MQW DFB Laser ¾ Built-in TEC, Thermistor and Monitor PD ¾ 25Ω Input Impedance Matching ¾ Built-in Optical Isolator

Contextual Info: 40A Integrated PowIRstage FEATURES IR3552 DESCRIPTION • Peak efficiency up to 94.5% at 12VIN to 1.8VOUT, 93.3% at 1.2VOUT The IR3552 integrated PowIRstage contains a low quiescent current synchronous buck gate driver IC which is co-packed with control and synchronous

chebyshev 3dB

Abstract: J32Z AN561 SD1563 702 Z TRANSISTOR 32CZ 00724 chebyshev 0.2dB
Contextual Info: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for

chebyshev 3dB

Abstract: transistor 81L AN561 SD1563 amplifier 250W
Contextual Info: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,

DN4148

Abstract: 2N5109 spice power transistor bjt 1000 a 7432N 2n5109 transistor B9112 QN5109 TF011 bjt oscillator 2N5109
Contextual Info: New Models Simulate RF Circuits Its no news to those who simulate that the accuracy of SPICE is directly related to the accuracy of the models. What may be news is that simulation of high frequency circuits well into the gigahertz range is now possible due to the introduction of some new RF

Contextual Info: »9NK9KN»’ M W »m M9NNM, W \\\ \\\\ \\W î W NtiW N« A \\\\\W / ffi, i» §§§ ^ ^ ^ ^ / 'S » f r^ t Z Z ~ MMICONDUCTOR AS34063 Excellence in Analog Power Products 1.5 A DC-to-DC Converter Control Circuits PRELIMINARY INFORMATION FEATURES APPLICATIONS

Contextual Info: Dual Conductor, High Current Power Inductors HALOGEN HF Pb FREE Flat-Pac FPT705 Series Applications • Designed specifically for use with Picor Cool-Power® ZVS-Buck Regulator Family Picor part number Series PI33xx and PI34xx Environmental Data • Storage temperature range (component): -40°C to +125°C

Contextual Info: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM400E2G-130H IC ………………………

TRANSISTORS 132 GD

Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
Contextual Info: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: ALPHA SEMICONDUCTOR AS34063 1E xcellen ce in A n alog P ow er P rod ucts 1.5A DC-to-DC Converter Control Circuits PRELIM INARY INFORM ATION FEATURES APPLICATIONS • • • • • • • • • • • • • • • Operation From 3.0V To 40V Input

we-midcom

Abstract: PKG-0605 WE-MIDCOM transformer
Contextual Info: CUSTOMER TERMINAL Sn96%, Ag4% RoHS LEAD Pb — FREE Yes Yes m o re t h a n y o u e x p e c t W£ IVidcom DOT LOCATES TERM. #1 CHAMFER LOCATES TERM. #1 .539 MAX. [1 3.69 ] 1.272 MAX. [3 2.31 ] PARAMETER ►750311783 1.064 MAX. ‘ [2 7 .0 3 ] , TERM. N O .’s FOR REF. ONLY

Contextual Info: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

CM400E2G-130H

Abstract: cm400e CM400E2 P-20095
Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM400E2G-130H 大電力スイッチング用 絶縁形 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール CM400E2G-130H ● IC . 400 A

F941

Abstract: 2N6671 2N6673
Contextual Info: M I L —S —19500/536{USAF AMENDMENT 3 8 Sep tem b er 1987_ SUPERSËDING AMENDMENT 2 7 F e b r u a r y 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVI CE, TRANSISTOR, NPN, S I L I C O N , POWER TYPES 2N6671, AND 2N6673, JAN, JANTX, AND JANTXV This

AS34063

Abstract: MC34063 2A AS34063S 12 v to 5 v MC34063
Contextual Info: ALPHA SEMICONDUCTOR AS34063 1E x ce lle n ce in A n a lo g P o w e r P ro d u c ts 1.5A DC-to-DC Converter Control Circuits PRELIM INARY INFORM ATION FEATURES APPLICATIONS • • • • • • • • • • • • • • • Operation From 3.0V To 40V Input

Contextual Info: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E2G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E2G-130H ● IC ………………………

IRFP150

Abstract: IRFP RE 40
Contextual Info: H a r r IRFP150, IRFP151, IRFP152, IRFP153 i s S E M I C O N D U C T O R 34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 34A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

cw DWDM laser 1610

Abstract: Samsung Electronics Company DFB DL47B3A GR-468-CORE connector SAMSUNG 30 PIN SAMSUNG DL47B3A
Contextual Info: 1 Technical Data Sheet August 2001 OPTOELECTRONICS DIVISION DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module Features ¾ High-performance MQW DFB Laser ¾ Built-in TEC, Thermistor and Monitor PD ¾ 25Ω Input Impedance Matching ¾ Built-in Optical Isolator

diode 4483

Abstract: IRFP150R irfp 350 n 4484 MOSfet
Contextual Info: IRFP150/151/152/153 IRFP150R/1 51R /152R/153R 23 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 34A and 40A, 60V - 100V TOP VIEW • r0S on = 0.055£1 and 0 .0 8 fl DRAIN (T A B ) • Single Pulse Avalanche Energy Rated*