16M SRAM Search Results

Contextual Info: REV22 MITSUBISHI LSIs M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169R T is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a 1024

3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable

Contextual Info: REV22 MITSUBISHI LSIs M5M4V16169TP-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169TP is a 16M -bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynam ic m em ory array and a

SDRAM

Abstract: 128Mx8 DDR dRAM 512M 8M X 16 SDRAM 8M X 16 X 4 SDRAM SDRAM 128M 8M x 16 512M ISSD16M16STC TSOP SDRAM ISAS512K16LTD
Contextual Info: MPD Parts Directory March 2002 Stack Technology Stack Memory Configuration Stack Part Number TSOP Memory Configuration SRAM (8M) 512K x 16 ISAS512K16LTD (4M) 256K x 16 EDO DRAM (128M) 16M x 8 ISED16M8LTB (64M) 16M x 4 SDRAM SDRAM SDRAM SDRAM SDRAM (512M)

Contextual Info: AS6C1616-55TINL 16M Bits LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Jan. 09. 2012 Alliance Memory, Inc. AS6C1616-55TINL Rev. 1.0 16M Bits LOW POWER CMOS SRAM FEATURES The AS6C1616 is a 16,777,216-bit low power

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The µPD4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. • Operating supply voltage is 3.3 V ± 0.3 V.

mitsubishi cdram

Abstract: 4L52
Contextual Info: A L-31012-01 C D R A M - MITSUBISHI ELECTRIC' •DRAM with high speed SRAM & high speed buffers interconnected by high speed wide bus — Data Inputs/Outputs CDRAM BLOCK DIAGRAM A MITSUBISHI ELECTRIC CDRAM feature 16M CDRAM Type name Feature 16M x l6 M5M4 V 16169DTP

Contextual Info: HYE18P16161AC-70/85 Graphics & Specialty Memories 16M Async/Page CellularRAM Version 1.8 06.2003 HYE18P16161AC-70/85 16M Async/Page CellularRAM Revision History – V1.31, 11/00 Fully synchronous bus interface with multiplexed address and data, asyncronous write, 1.8V

DI027

Abstract: SI010 DI024 DI028 DI026 SI06 si011 di021
Contextual Info: WH11DXL2X-001X MODULAR WHITE /M ICRO ELECTRO NICS 320C30 M ODULE, 16M SRAM/16M FLASH, ASIC ADVANCED* FEATURES FUNCTIONAL DESCRIPTION • Based on TM S320C 30 DSP ■ ■ Processor C lock Frequencies: 25, 33 M H z The 320C30 D igital Signal Processor M CM is a high perform ance,

4L4A

Abstract: SHARC 21060
Contextual Info: WHITE M ICRO ELECTRO NICS WH31MXL2X-001X MODULAR HEX21060MODULE, 16M SRAM/16M FLASH ADVANCED* FEATURES FUNCTIONAL DESCRIPTION • SHARC 21060 DSP Based ■ ■ Integra ted C lock G eneration C irc u itry ■ The Hex SHARC 21060 D ig ita l S ignal Processor MCM is a high

8x16s

Abstract: 1kx16 AD-011M ac45 M5M4V16169TP-10 m5m4v16
Contextual Info: v ^ EV 2 2 MITSUBISHI LSls M5M4V16169TP-10,-12,-15 16MCDRAM:16M 1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM DESCRIPTION 1. 2. The M5M4V16169TP is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a

pin diagram of ic 4013

Abstract: XPGN1 ic 4013 pin configuration diagram C0d7 Phoenix Contact 29 61 257
Contextual Info: WH12FXL2X-002X WHITE /M IC R O E L E C T R O N IC S 320C40 M ODULE. 16M SRAM/16M FLASH. FPGA MODULAR ADVANCED* FEATURES FUNCTIONAL DESCRIPTION • Based on TMS320C40 DSP ■ The 320C40 Digital Signal Processor MCM is a high performance, self-contained processor system in a single

M1407

Abstract: 54-PIN
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The µPD4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416001 is packaged in a 54-PIN PLASTIC TSOP (II).

Contextual Info: WHITE /M IC R O E L E C T R O N IC S WH22DXL2X-002X 68040 MODULE, 16M SRAM/16M FLASH, ASIC MODULAR ADVANCED* FUNCTIONAL DESCRIPTION FEATURES • Based on 68040 juP The 68040 General Purpose Processor M CM is a high perform ance, ■ Processor Clock Frequencies: 50, 66 M H z

Contextual Info: MITSUBISHI LSIs M 5 M 4 V 1 6 1 6 9 T P - 1 0 ,- 1 2 ,- 1 5 16M CDRAM16M 1024K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M5M4V16169TP is a 16M-bit Cached DRAM which integrates input registers, a 1048576-word by 1 6 - bit

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡jP D 4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The ,uPD4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V (A version) or 2.5 V ± 0.125 V (C version).

p5v3

Abstract: 8Kx32 P5V2
Contextual Info: WH11FXL2X-001X WHITE /M IC R O E L E C T R O N IC S 320C30 M ODULE. 16M SRAM/16M FLASH. FPGA MODULAR ADVANCED* FEATURES FUNCTIONAL DESCRIPTION • Based on TM S320C 30 DSP ■ ■ Processor Clock Frequencies: 25, 33 M H z ■ Integra ted Clock G eneration C irc u itry

Contextual Info: W H12DXL2X-002X WHITE /M IC R O E L E C T R O N IC S 320C40 M ODULE, 16M SRAM/16M FLASH, ASIC ADVANCED* FEATURES FUNCTIONAL DESCRIPTION • Based on TM S320C 40 DSP ■ ■ Processor Clock Frequencies: 33, 40 M H z ■ Integra ted Clock G eneration C irc u itry

RX2 1015

Abstract: 16M SRAM
Contextual Info: WHITE /M IC R O E L E C T R O N IC S W H21DXL2X-002X MODULAR 68020 MODULE, 16M SRAM/16M FLASH, ASIC ADVANCED* FEATURES FUNCTIONAL DESCRIPTION • Based on 68020 juP ■ ■ Processor Clock Frequencies: 16, 20, 25 M H z ■ Integra ted Clock G eneration C irc u itry

A64E16161

Abstract: A64E16161G bga 6x8
Contextual Info: A64E16161 2M X 16 Bit Low Voltage Super RAMTM Preliminary Features n Common I/O using three-state output n Support 3 distinct operation modes for reducing standby power : Reduced Memory Size Operation 8M,16M,24M,32M Partial Array Refresh (8M,16M,24M) Deep Power Down Mode

UT8ER512K32

Abstract: RAMDE scrub SRAM edac UT8ER512K32S
Contextual Info: Aeroflex Colorado Springs Application Note Designing with the UT8ER512K32 Monolithic 16M RadHardTM SRAM 1. Introduction This application note describes how to use the UT8ER512K32 Monolithic 16M RadHard SRAM in different system configurations, including a detailed look at the bus signals and CPU interface. The reader will also gain an understanding of how error detection and correction EDAC functions and improves error rate.

Contextual Info: W28J161B/T 16M 1M x 16 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

Contextual Info: M CP Multi-Chip Package FLASH M EM ORY & SRAM 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM MB84VA2102-10/MB84VA2103-io • FEATURES

0.4kw

Contextual Info: W28J161B/T 16M 1M x 16 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION .3 2. FEATURES .3