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    AS6C1616 Search Results

    AS6C1616 Datasheets (10)

    Alliance Memory
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    AS6C1616-55BIN
    Alliance Memory Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 48TFBGA Original PDF 1.82MB
    AS6C1616-55BINTR
    Alliance Memory Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 48TFBGA Original PDF 1.82MB
    AS6C1616-55TIN
    Alliance Memory Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48TSOP Original PDF 11
    AS6C1616-55TINL
    Alliance Memory Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 48TSOP I Original PDF 422.62KB
    AS6C1616-55TINLTR
    Alliance Memory Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 48TSOP I Original PDF 422.62KB
    AS6C1616-55TINTR
    Alliance Memory Memory, Integrated Circuits (ICs), IC SRAM 16M LP 1024X16 48TSOP Original PDF 11
    AS6C1616-70BIN
    Alliance Memory Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 70NS 48TFBGA Original PDF 11
    AS6C1616-70BINTR
    Alliance Memory Memory, Integrated Circuits (ICs), IC SRAM 16M LP 1024X16 48TFBGA Original PDF 11
    AS6C1616A-55BIN
    Alliance Memory Memory, Integrated Circuits (ICs), IC SRAM 1024K X 16 3.0V 48-TFBGA Original PDF 12
    AS6C1616A-55BINTR
    Alliance Memory Memory, Integrated Circuits (ICs), IC SRAM 16M LP 1024X16 48TFBGA Original PDF 12
    SF Impression Pixel

    AS6C1616 Price and Stock

    Alliance Memory Inc

    Alliance Memory Inc AS6C1616C-45TIN

    IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns
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    TME AS6C1616C-45TIN 1
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    Avnet Americas AS6C1616C-45TIN Tray 24 Weeks 96
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    Mouser Electronics AS6C1616C-45TIN
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    Alliance Memory Inc AS6C1616B-55BIN

    IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
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    TME AS6C1616B-55BIN 480
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    Avnet Americas AS6C1616B-55BIN Tray 30 Weeks 480
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    Avnet Silica AS6C1616B-55BIN 21 Weeks 480
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    Alliance Memory Inc AS6C1616C-45TINTR

    IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns
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    TME AS6C1616C-45TINTR 1,500
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    Avnet Americas AS6C1616C-45TINTR Tape & Reel 24 Weeks 1,500
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    Mouser Electronics AS6C1616C-45TINTR 1,433
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    Newark AS6C1616C-45TINTR Tape & Reel 1
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    Avnet Silica AS6C1616C-45TINTR 17 Weeks 1,500
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    Alliance Memory Inc AS6C1616B-45BIN

    IC: SRAM memory
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    TME AS6C1616B-45BIN 480
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    Avnet Americas AS6C1616B-45BIN Tray 24 Weeks 480
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    Newark AS6C1616B-45BIN Bulk 480
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    Avnet Silica AS6C1616B-45BIN 17 Weeks 480
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    Alliance Memory Inc AS6C1616B-45TIN

    IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
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    TME AS6C1616B-45TIN 1
    • 1 $20.03
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    • 100 $17.81
    • 1000 $16.70
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    Avnet Americas AS6C1616B-45TIN Tray 30 Weeks 96
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    Mouser Electronics AS6C1616B-45TIN
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    Newark AS6C1616B-45TIN Bulk 96
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    Avnet Silica AS6C1616B-45TIN 8,064 17 Weeks 96
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    AS6C1616 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: AS6C1616-55TINL 16M Bits LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Jan. 09. 2012 Alliance Memory, Inc. AS6C1616-55TINL Rev. 1.0 16M Bits LOW POWER CMOS SRAM FEATURES The AS6C1616 is a 16,777,216-bit low power


    Original
    as6c1616-55tinlas6c1616216-bit48-pin PDF

    SRAM TTL 1024K x 8

    Abstract: AS6C1616 cmos sram AS6C1616-70 DR 12V
    Contextual Info: AS6C1616 FEBRUARY 2009 January 2007 512K X 8 BI T LOW 1024K X 16 BIT LOW POWER CMOS SRAMPOWER FEATURES CMOS SRAM GENERAL DESCRIPTION The AS6C1616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using


    Original
    as6c16161024k216-bitfebruary/2009+4sram ttl 1024k x 8cmos sramas6c1616-70dr 12v PDF

    AS6C1616

    Abstract: cmos sram AS6C1616-55BIN 1024K SRAM TTL 1024K x 8
    Contextual Info: AS6C1616 FEBRUARY 2009 January 2007 512K X 8 BI T LOW 1024K X 16 BIT LOW POWER CMOS SRAMPOWER FEATURES CMOS SRAM GENERAL DESCRIPTION The AS6C1616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using


    Original
    as6c16161024k55/70ns45/30ma+648-ball216-bitfebruary/2009cmos sramas6c1616-55binsram ttl 1024k x 8 PDF

    AS6C1616

    Abstract: TSOPI
    Contextual Info: APRIL 2010 AS6C1616 1024K X 16 BIT LOW POWER CMOS SRAM PACKAGE OUTLINE DIMENSION 48-pin 12mm x 20mm TSOP-I Package Outline Dimension APRIL/2010 V1.b ALLIANCE MEMORY


    Original
    as6c16161024k48-pinapril/2010+1tsopi PDF

    AS6C1616A

    Abstract: AS6C8016
    Contextual Info: AUGUST 2010 AS6C1616A 1024K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION • • • • • • TheAS6C1616A - 55%,1 is fabricated by Alliance's advanced full CMOS process technology. The device supports industrial temperature range and Chip Scale


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    1024k48-fpbgaas6c1616atheas6c1616a+1as6c8016 PDF

    as6c1616

    Abstract: AS6C1616-55TIN
    Contextual Info: APRIL 2010 AS6C1616 1024K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The AS6C1616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS


    Original
    as6c16161024k216-bit45/30ma+2april/2010as6c1616-55tin PDF

    CY62148E

    Abstract: R1LP0108ESA-7SR
    Contextual Info: Selection Guide Low Power SRAM www.renesas.eu 2014.03 About Renesas Electronics Corporation Renesas Electronics Corporation TSE: 6723 , the world’s number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad range of analog and power devices.


    Original
    r1wv6416rsd-5sir1wv6416rsd-7sihm6216514ltti-5slr10pf0003ed0700+2cy62148er1lp0108esa-7sr PDF