16KB Search Results

Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BRCA016GWZ-W 16Kbit General Description BRCA016GWZ-W series is a serial EEPROM of I2C BUS Interface Method. Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Completely conforming to the world standard I2C BUS. All controls available by 2 ports of serial clock (SCL)

echo mixer circuit

Abstract: echo mixer circuit diagram DATASHEET OF IC 741 HT8665 LM324 LM386 audio echo ic
Contextual Info: HT8665 Talking Back with Echo Features • • • • • Operating voltage: 4.5V~5.5V ADM algorithm Auto playback with an echo effect DRAM options: – 64K – 256K Sampling rate options: – 32Kbps bits per second – 16Kbps • • • • • • •

SCANBE

Abstract: SCANBE ejector scanbe handle SCANBE connector mk48t59 MVME2304-0133 MVME2300 PMCSPAN-002 VME COnnector MPC604
Contextual Info: MVME2300 TM VME Processor Modules ♦ PowerPC 603 or PowerPC 604™ 32-bit microprocessor ♦ L1 cache–16KB/16KB PowerPC 603 or 32KB/32KB PowerPC 604 ♦ 16MB to 128MB of on-board ECC DRAM ♦ Up to 1MB socketed Flash for on-board firmware or user-specified requirements

p89c51rd2

Abstract: p89c51rd2 CIRCUIT P89C51RC2HFBD P89C51RD2HBA
Contextual Info: INTEGRATED CIRCUITS P89C51RB2/P89C51RC2/P89C51RD2 80C51 8-bit Flash microcontroller family 16KB/32KB/64KB ISP/IAP Flash with 512B/512B/1KB RAM Preliminary specification Supersedes data of 2000 Nov 28 IC28 Data Handbook Philips Semiconductors 2001 Jan 11 Philips Semiconductors

Contextual Info: STM32F328x8 ARM -Cortex®-M4 32b MCU+FPU, 64KB Flash, 16KB SRAM, 2 ADCs, 3 DAC channels, 3 COMPs, Op-Amp, 1.8 V Datasheet −production data Features • Core: ARM®-32-bit-Cortex®-M4 CPU with FPU 72 MHz max , single-cycle multiplication and HW division, and DSP instruction

MCS-51

Abstract: SM59R04A2 SM59R04A2C25 SM59R04A2L25 ISSFD-M042 MD070
Contextual Info: SM59R04A2/SM59R03A2/SM59R02A2 8-Bit Micro-controller 16KB/12KB/8KB with ISP Flash & 1KB RAM embedded Product List Features SM59R04A2L25, SM59R04A2C25 SM59R03A2L25, SM59R03A2C25 SM59R02A2L25, SM59R02A2C25 Description The SM59R04A2 is a 1T one machine cycle per clock

MT28F008B3

Abstract: MT28F800B3
Contextual Info: 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks

MT28F002B3

Abstract: MT28F200B3
Contextual Info: 2Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B3 MT28F200B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks

sop28

Abstract: STK22C48 STK22C48-NF25 STK22C48-NF45 tps 1806 239 SOIC
Contextual Info: STK22C48 2Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Times The Simtek STK22C48 is a 16Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance

AEC-Q100

Abstract: FM25160 FM25C160 FM25C160-S
Contextual Info: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

M93C46W6

Abstract: M93C06 M93C46 M93C56 M93C66 M93C76 M93C86 AN1571 proto STMicroelectronics date code format PDIP8
Contextual Info: M93C86, M93C76, M93C66 M93C56, M93C46, M93C06 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide MICROWIRE Serial Access EEPROM FEATURES SUMMARY • Industry Standard MICROWIRE Bus ■ Figure 1. Packages Single Supply Voltage: – 4.5V to 5.5V for M93Cx6

SM2603

Contextual Info: 64Mbit - Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Product Brief Features • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache • Four Bank Architecture • Synchronous Operation up to 166MHz

FM25160

Abstract: FM25C160 FM25C160-P FM25C160-S MS-001
Contextual Info: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

iButton Chips

Abstract: DS9092 DS1995 DS1996 DS9093F DS9093RA DS9101 UL913
Contextual Info: DS1995 DS1995 16Kbit Memory iButtonTM F5 MICROCANTM SPECIAL FEATURES • 16384 bits of read/write nonvolatile memory • 256–bit scratchpad ensures integrity of data transfer • Overdrive mode boosts communication to 142k bits 5.89 0.36 0.51 per second

TMP47C1670N

Contextual Info: 4-BIT MICROCONTROLLERS TLCS-470A Series CMOS FEATURES Memory Capacity Additional Features (1) Max. 16Kbyte ROM and max. 768-nibble RAM (2) One time PROM built-in type available (1) (2) (3) (4) (5) (6) Basic Functions (3 ) (4) (5 ) (6) 105 instructions; min. execution time 1. 3 ( j l s

wm71008

Abstract: rfid reader 915MHZ EBV8 0X00B WM71016 RFID specifications RFID protocol interrogator
Contextual Info: Preliminary WM71004 / WM71008 / WM71016 4/8/16Kbit Secure F-RAM Memory with Gen-2 RFID Access DESCRIPTION FEATURES The WM710xx is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs

Contextual Info: Preliminary FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • NoDelay Writes • Advanced high-reliability ferroelectric process

Contextual Info: Preliminary FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • NoDelay Writes • Advanced high-reliability ferroelectric process

FM25L16B

Contextual Info: AEC Q100 Grade 1 Compliant FM25L16 – Automotive Temp. 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM24CL16 16Kb FRAM 2-wire Memory 2.7V-5.5V operation Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

Contextual Info: G2 WHITE /M ICROELECTRONICS W M C64P603EV-XQ3M RISC 603e M ONOLITHIC MICROPROCESSOR PR ELIM INARY * FEATURES • Processor C lock Frequencies of 80M Hz and 100M Hz • 16KByte d a ta c a c h e -fo u r-w a y s e t-a sso cia tive , ph ysica lly addressed; Least R ecently Used LRU replacem ent

DS2165Q

Contextual Info: D S 2165/D S2165Q DALLAS SEMICONDUCTOR D S 2 1 6 5 /D S 2 1 6 5 Q 16/24/32Kbps ADPCM Processor PIN ASSIGNMENT FEATURES • Compresses/expands 64Kbps PCM voice to/from either 32Kbps, 24Kbps, or 16Kbps • Dual, fully independent channel architecture; device

TMS44C256

Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Contextual Info: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore

X25169

Abstract: X5168 X5169
Contextual Info: X5168, X5169 Replaces X25268, X25169 Data Sheet September 16, 2005 FN8130.1 CPU Supervisor with 16Kbit SPI EEPROM Features These devices combine three popular functions, Power-on Reset Control, Supply Voltage Supervision, and Block Lock Protect Serial EEPROM Memory in one package. This