16384W Search Results

Contextual Info: * 16K x 1 ECL RAM SYNERGY SEMICONDUCTOR FEATURES SY10480-6 DESCRIPTION • Address access time, tAA: 6ns max. ■ Chip select access time, tAc: 3ns max. The Synergy SY10480 is a 16384-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10480 is organized as 16384words-by-1-bit, meets the standard 10K family signal and

Contextual Info: * SY10480-8 SY10480-10 16K x 1 ECLRAM SYNERGY SEM ICO NDUCTO R DESCRIPTION FEATURES The Synergy SY10480 is a 16384-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) circuitry. The SY10480 is organized as 16384words-by-1-bit, meets the standard 10K family signal and

Contextual Info: * SY10/100/101480-6 SY10/100/101480-8 SY10/100/101480-10 16K x 1 EC L RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 6/8/10ns max. ■ Chip select access time, tAC: The Synergy SY10/100/101480 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter

Contextual Info: HM6789 Series Maintenance Only Refer to HM6789HA Series 16384-word x 4-bit High Speed Hi-BiCMOS Static RAM with OE Feature* • Super Fast Access T im e :. 25/30 ns (max) • Low Power Dissipation (DC) Operating . . 230 mW (typ.)

Contextual Info: HM101494 Series-16384-Words x 4-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101494 is ECL 100K compatible, 16384-words by 4-bits read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

HM6788HAP-15

Abstract: HM6788HAP-12 HM6788HA
Contextual Info: HM6788HA Series 16384-word x 4-bit High Speed Hi-BiCMOS Static RAM Features • 16384-word × 4 bit organization • 1.3 µm Hi-BiCMOS process • Super fast Access time: 12/15 ns max • Low power dissipation (DC) operating: 300 mW (typ) • +5 V single supply

Contextual Info: MITSUBISHI LSIs M 5M 5189BP, J- I S ,-2 0 ,-2 5 65S36-BIT 16384-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION This is a fam ily o f 16384 w ord by 4 -b it static RAM s, fabri­ PIN CONFIGURATION (TOP VIEW) cated w ith the high-performance C M OS silicon-gate MOS

IEU-1314

Abstract: 78C14 78C18 87AD uPD78C11A uPD78C18 uPD78CP18 uPD78CP18GF UPD27C256A uS5A13RA87
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HM6267LP-55

Abstract: HM6267 HM6267LP-45 HM6267P-35 HM6267P-45 HM6267P-55 Hitachi Scans-001
Contextual Info: HM6267 Series 16384-word x 1-bit High Speed CMOS Static RAM • FEATURES • High Speed: Fast Access Time 35/45/55ns max. • Low Power Standby and Low Power Operation Standby: 0.1 mW (typ.)/5fiW (typ.) (L-version), Operation: 200mW (typ.) • Single 5V Supply and High Density 20 Pin Package

HM4716

Abstract: 4716a 4716AP-2 Dv14 HM4716A HM4716AP-4 16384-WORD 4716AP-3
Contextual Info: H M 4 7 1 6 A - 1 , H M H M 4 7 1 6 A - 3 , H M 4 7 1 6 A - 2 , — H M 4 7 1 6 A - 4 , 4 7 1 6 A P - 1 , H M 4 7 1 6 A P - 2 , H M 4 7 1 6 A P - 3 , H M 4 7 1 6 A P - 4 16384-word X 1-bit Dynamic Random Access Memory The H M 4716A is a 16,384 word by 1 b it MOS random access mem ory c irc u it

Contextual Info: H N 2 7 1 2 8 AG S e r i e s 16384-word X 8-bit UV Erasable and Programmable ROM The H N27128AG is a 16384-word by 8-bit erasable and electrically programmable ROM. This device is packaged in a 28-pin, dual-in-line package w ith transparent window. The transparent w indow allows

HD7750

Abstract: 93CS56L HD7709A PLX PCI9054 PCI9054 PCI9054 AN TX15-100P-LT-MH1 M/HD7709A SH7750 VGA RGB Signal Generator
Contextual Info: MB86290EB01 CREMSON [MB86290A] Evaluation System Hardware Specifications December 8 ‘99 Rev.0.2 All Right Reserved. The information contained in this document has been carefully checked and is believed to be reliable. However, Fujitsu Limited assumes no responsibility for inaccuracies. The

Contextual Info: MH1616FNA-29 262144-BIT 16384-WORD BY 16-BIT COMS STATIC RAM DESCRIPTION The M H 1616FN A is a 2 6 2 1 4 4 -bits CMOS static PIN CONFIGURATION (TOP VIEW) [Both side] RAM nodule organized as 16384-w ords by 16-bits. It consists of DQo 1 1 :our industry standard 1 6 K x 4 static RAMs and designed

Contextual Info: MITSUBISHI LSIs M5M5188AP, J-25, -35, -45, -55 65536-BIT 16384-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION This is fa m ily o f 16384 w ord by 4 -b it static RAMs, fa b ri­ PIN CONFIGURATION (TOP VIEW) cated w ith the high-performance CMOS silicon-gate MOS

AK4679EG

Abstract: FS2335 FO-31 ak4679 n81d
Contextual Info: [AK4679] AK4679 24bit Stereo CODEC with DSP and MIC/RCV/HP/SPK/LINE-AMP GENERAL DESCRIPTION The AK4679 is a 24bit stereo CODEC and a built-in Microphone-Amplifier, Receiver-Amplifier, Mono Class-D Speaker-Amplifier, Cap-less Class-G Headphone-Amplifier and Line-Amplifier as well as

Contextual Info: Agilent E1432A 4-16 Channel 51.2 kSa/s Digitizer plus DSP Technical Specifications Trigger Fail Acs Fail Acs Trigger Fail Acs Source Tach1 Tach 2 ExTrig COLA 16 CHANNEL 51.2 kSa/s Digitizer + DSP 16 CHANNEL 51.2 kSa/s Digitizer + DSP 16 CHANNEL 51.2 kSa/s

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

Contextual Info: MITSUBISHI LSIs M5M27C128K, -2, -3 1 3 1 0 7 2 -B IT 1 6 3 8 4 -W O R D BY 8 -B IT <XVCMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTIO N P IN C O N F IG U R A T IO N (TO P V IE W ) T h e M itsub ishi M 5 M 2 7 C 1 2 8 K is a high-speed 1 3 1 0 7 2 -b it

AK7719ECB

Contextual Info: [AK7719] AK7719 Low Power DSP for Voice and Audio Processing 概 要 AK7719は4つのシリアルデータI/Fをもつディジタルシグナルプロセッサ DSP です。DSPのマスタクロ ックを生成するクロックジェネレイタを搭載しDSPは1875 steps/fs (48kHzサンプリング時)の並列演

HM6167HP-70

Abstract: hm6167 HM6167HP HM6167HP-55 HM6167HLP-55 ir 2210 ic
Contextual Info: HM6167H S e rie s Maintenance Only Substitute HM6267P 16384-word x 1-bit High Spaed CMOS Static RAM • FEATURES • Fast Access Time. 55/70ns (max) • Low Power Standby and Low Power Operation Standby 100/xW (typ)/5f/W (typ) (L-version),

65536-word

Abstract: 8192-WORD SRAM
Contextual Info: Contents • L in e U p o f H ita c h i IC M e m o r i e s . 7 • P a c k a g e In f o rm a tio n s .

CIRCUIT+DIAGRAM+str+6267+f

Contextual Info: H M 6 2 6 7 S e r ie s 16384-word x 1-bit High Speed CMOS Static RAM • FEATURES • High Speed: Fast Access Time 35/45 ns max. • Low Power Standby and Low Power Operation Standby: 0.1mW (typ.)/5/iW (typ.) (L-version), Operation: 200mW (typ.) • Single 5V Supply and High Density 20 Pin Package

Contextual Info: HM6289 Series 16384-Word x 4-Bit High Speed CMOS Static RAM with OE Th e Hitachi H M 6 2 8 9 is a high speed 64k static R A M organized Pin Arrangement as 16-kword x 4-bit. It realizes high speed access tim e (2 5 /3 5 /4 5 ns) and low power consumption, employing C M O S process techno logy.

HM6788

Contextual Info: HM6788H Series Maintenance Only 16384-word x 4-bit High Speed Hj-BiCMOS Static R A M Refer to HM6788HA Series Features • Super Fast Access Time : • Low power Operation & 15/20ns max. Operating: 280mW (typ) • +5 V Single Supply • Completely Static Memory —