162MW Search Results
162MW Price and Stock
Eaton Corporation PLSM-C16/2-MWCircuit breaker; 230/400VAC; Inom: 16A; Poles: 2; Charact: C; 10kA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PLSM-C16/2-MW | 1 |
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Texas Instruments LM6162MW8Operational Amplifier, 1 Func, BIPolar |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LM6162MW8 | 9,419 |
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162MW Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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LTC2170C
Abstract: LTC2171C LTC2172-14 LTC2172C LTC2172I LTC2172CUKG-14
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ltc2172-14/ltc2171-14/ltc2170-1414-bit65msps/40msps/+11 | |
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Contextual Info: LTC2172-14/ LTC2171-14/LTC2170-14 14-Bit, 65Msps/40Msps/ 25Msps Low Power Quad ADCs DESCRIPTION FEATURES n n n n n n n n n n n n 4-Channel Simultaneous Sampling ADC 73.7dB SNR 90dB SFDR Low Power: 311mW/202mW/162mW Total, 78mW/51mW/41mW per Channel Single 1.8V Supply |
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ltc2172-14/ltc2171-14/ltc2170-1414-bit65msps/40msps/+5 | |
LTC2170UKG-14
Abstract: LTC2172UKG-14 QFN-40 thermal resistance LTC2170-14 2172 LTC2170C LTC2171C LTC2172-14 LTC2172C LTC2172I
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ltc2172-14/ltc2171-14/ltc2170-1414-bit65msps/40msps/+15 | |
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Contextual Info: LTC2172-14/ LTC2171-14/LTC2170-14 14-Bit, 65Msps/40Msps/ 25Msps Low Power Quad ADCs DESCRIPTION FEATURES n n n n n n n n n n n n 4-Channel Simultaneous Sampling ADC 73.7dB SNR 90dB SFDR Low Power: 311mW/202mW/162mW Total, 78mW/51mW/41mW per Channel Single 1.8V Supply |
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ltc2172-14/ltc2171-14/ltc2170-1414-bit65msps/40msps/+5 | |
MSM51V1000A
Abstract: ZIP20
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j2g0056-17-41msm51v1000a576-wordmsm51v1000acmos1+6 | |
QFN-52
Abstract: LTC2265-12 LTC2265C 2265431 2263C
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ltc2265-12/ltc2264-12/ltc2263-1212-bit65msps/40msps/+10 | |
2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
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f2002f2003f20042sc3355 spice model+9 | |
LTC2170C
Abstract: LTC2171C LTC2172-12 LTC2172C LTC2172I
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ltc2172-12/ltc2171-12/ltc2170-1212-bit65msps/40msps/+10 | |
GH5R41KA3C
Abstract: Sharp Laser Diode driver YEDS-18 ECG123
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gh5r41ka3c162mw45mhzsharp laser diode driver+2 | |
ymu7
Abstract: Yamaha eq NISSEI AH capacitors
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ymu757bymu75bymu759-q32qfn+6 | |
ymu7Contextual Info: YMU757B MA-1C Outline The YMU757B is a high quality melody LSI for cellular phone handsets, supporting the data format for various applications including ringing and holding melody sounds. The built-in Yamaha's original FM synthesizer can create various timbres, and its built-in sequencer can produce up to 4 different sounds with 4 different timbres simultaneously |
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ymu757bymu7 | |
ymu7
Abstract: 392Hz circuit on how to make a simple amplifire 587Hz
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ymu757bymu7392hzcircuit on how to make a simple amplifire+1 | |
RELAYS FUJITSU
Abstract: 110VDC ftr-c1 RELAY FUJITSU 321
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1500vac3000vaciec60950/en60950/ul1950/csa+4 | |
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Contextual Info: FTR-K1 SERIES POWER RELAY 2 POLES-2A High insulation/wide gap FTR-C1 Series FEATURES 2 Poles, 2 form C Contact gap: more than 0.6mm High surge voltage: 2500V between open contacts 5000V between coil & contact Complies with Telcordia former Bellcore 2nd level surge |
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1500vac3000vaciec60950/en60950/ul1950/csa+1 | |
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pd223
Abstract: pd 223 PI3EQX6801 PI2EQX6811ZDEX PI3EQX6801ZDE PI3EQX5701 PI3EQX4951ST ABLEBOND 8200T PI3EQX6701AZDE PI3EQX6741STZDE
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pi3eqx6801pi2eqxdp101-azfepi2eqxdp101-azfexpi2eqxdp101zfe+13 | |
b72LContextual Info: O K I Semiconductor MSM51 V1000 1,048,576-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51V1000 is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM51V1000 is OKI's CMOS silicon gate process technology. |
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msm51v1000576-word7e4240b72l | |
LTC2171-12
Abstract: LTC2170C LTC2171C LTC2172-12 LTC2172C LTC2172I LTC2172IUKG-12#PBF QFN-40 thermal resistance
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ltc2172-12/ltc2171-12/ltc2170-1212-bit65msps/40msps/+13 | |
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Contextual Info: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株 |
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j2i0034-17-32msm52c102a536-word16-bit+4 | |
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Contextual Info: J2I0034-17-32 作成:1998年 1月 ¡ 電子デバイス MSM52C102A l 暫定 MSM52C102A 65,536-Wordx16-Bit CMOS STATIC RAM n 概要 で動作し入出力はLVCMOSと直結可能です。さらに、回路は完全にスタティックなため、外部クロッ |
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j2i0034-17-32msm52c102a536-word16-bit+4 | |
YEDS-18
Abstract: 780nm 90mW hologram unit 479012 "beam splitter" Sharp Hologram laser 780nm 30mw
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162mw45mhzyeds-18780nm 90mw+5 | |
ftr-c1Contextual Info: FTR-K1 SERIES POWER RELAY 2 POLES-2A High insulation/wide gap FTR-C1 Series FEATURES 2 Poles, 2 form C Contact gap: more than 0.6mm High surge voltage: 2500V between open contacts 5000V between coil & contact Complies with Telcordia former Bellcore 2nd level surge |
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1500vac3000vaciec60950/en60950/ul1950/csa+1 | |
DIP28
Abstract: MSM51V257CL
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j2i0012-17-y1msm51v257cl768-wordmsm51v257cl32+6 | |
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Contextual Info: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株 |
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j2i0033-17-32msm52c101a072-wordmsm52c101a131+4 | |
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Contextual Info: 1:2 Differential-to-LVPECL Buffer/Divider IDT8S89871I DATA SHEET General Description Features The IDT8S89871I is a high speed Differential-to-LVPECL Buffer/Divider. The IDT8S89871I has a selectable ÷2, ÷4, ÷8, ÷16 output dividers. The clock input has internal termination resistors, |
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idt8s89871i | |