160V Search Results

2N5551

Contextual Info: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

2N5401

Contextual Info: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V

MJE5180

Abstract: 5182 MJE5181 MJE5182
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJE5180/5181/5182 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 120V(Min)- MJE5180 = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 ·Low Saturation Voltage ·Complement to Type MJE5170/5171/5172

Contextual Info: Industrial Line – T8W Series 8W 4:1 SINGLE & DUAL OUTPUT HIGH PERFORMANCE DC/DC CONVERTER Specifications INPUT Voltage range 24V nominal input 9-36VDC 48V nominal input 18-75VDC 110V nominal input 43-160VDC Input filter Pi type. Input surge voltage 24V input

TP0616N3

Abstract: TP0616N2
Contextual Info: ^ Supertex inc. TP06C Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices O rder Num ber / Package R dS ON (max) ' d (ON) ^G S fth ) BV dgs (min) (m ax) TO-39 TO-92 -160V 1212 -0.75A -2.4V TP0616N2

d3s diode

Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Contextual Info: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2

VP0116N5

Abstract: VP0116N2 25-C2 VP01c
Contextual Info: VP 01C fàk S u p e r te x inc. /p \ ^ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package B^dss / ^DS O N ^D(ON) b v dgs (max) (min) TO-39 TO-92 TO-220 DICEt -160V 2 5 ii -100mA VP0116N2

Contextual Info: ^ . T P 06C Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices t Order Number / Package BV DSS/ ^ D S O N ' d (ON) ^ G S (lh ) b v dgs (max) (min) (max) -160V 12Q -0.75A -2.4A TP0616N2

VN0116N3

Abstract: Vn0116 VN01-1 VN0116N2 VN0120ND VN0120N2
Contextual Info: VN0116 VN0120 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss / R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-39 TO-92 TO-220 Dice+ 160V 10Q 0.4A VN0116N2 VN0116N3 VN0116N5 VN0116ND 200V

Contextual Info: HV217/HV218 Low Charge Injection 8-Channel High Voltage Analog Switch Ordering Information_ Package Options Operating v PP Vpp - v NN Die in waffle pack 24-pin plastic DIP 28-lead plastic chip carrier 28-lead SOW 40V to 80V 160V

MMBT5551L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G „ ORDERING INFORMATION Normal MMBT5551-x-AE3-R

Contextual Info: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: A L U M IN U M E L E C T R O L Y T IC Subminiature, 6.3V to 100V NEV, NEH Series . Pg. 2 Subminiature, High Voltage, 160V to 450V (NEVH, NEHH Series) .Pg- 5 Non-Polarized (NPR, NPA Series). Pg- 7

MMBT5551A

Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION

marking G1 sot23 UTC

Contextual Info: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free PZT5551L-x-AA3-R PZT5551G-x-AA3-R

2SD1918

Abstract: 80MHZ
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SD1918 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High breakdown voltage. BVCEO = 160V +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1

Contextual Info: BLF8G20LS-160V Power LDMOS transistor Rev. 2 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1.

EN 61373 Category 1 Class B

Abstract: CN200 EN50155 IEC60571 CN30A110 CN200A CN100A110-12 CN200A110
Contextual Info: • 60 - 160VDC Input to EN50155/IEC60571 • EN/IEC 61373 Shock and Vibration • Base plate Cooled • Full Power at 100°C base plate • Five Year Warranty Key Market Segments & Applications Railway Applications Suitable for battery powered railway systems

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION

2SB649

Abstract: 669a 2SB649A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION •With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity

SBT5401

Abstract: SBT5551
Contextual Info: SBT5551 Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401

2SC3902 T

Abstract: 2SA1507 2SC3902
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1507 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC3902 APPLICATIONS ·Designed for use in color TV audio output, converters and