SBT5551 Search Results

SBT5551 Datasheets (2)

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AUK

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SBT5551		AUK	NPN Silicon Transistor	Original	PDF	193.19KB	3
SBT5551F		AUK	NPN Silicon Transistor	Original	PDF	192.57KB	3

SBT5551 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SBT5401 Abstract: SBT5551 Contextual Info: SBT5551 Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401	Original	sbt5551 sbt5401 ot-23 kst-2012-000	PDF
SBT5551F Abstract: Transistor KST-2097-000 transistor 2097 SBT5401F Contextual Info: SBT5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F	Original	sbt5551f sbt5401f ot-23f kst-2097-000 +2transistor transistor 2097	PDF
SBT5401 Abstract: 2sbt5401 SBT5551 Contextual Info: SBT5401 PNP Silicon Transistor Description PIN Connection • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551	Original	sbt5401 -160v sbt5551 ot-23 +2ksd-t5c079-000 2sbt5401	PDF
sbt5401 Contextual Info: SBT5401 Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551	Original	sbt5401 -160v sbt5551 ot-23 +1kst-2013-001	PDF
SBT5551F Abstract: SBT5401F SBT5401 Contextual Info: SBT5551F NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier • High voltage application 3 Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F	Original	sbt5551f sbt5401f ot-23f ksd-t5c076-000 +1sbt5401	PDF
Contextual Info: SBT5551 NPN Silicon Transistor PIN Connection Descriptions • General purpose am plifier • High volt age applicat ion 2 • high collect or breakdown volt age : VCBO = 180V, VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.)	Original	sbt5551 sbt5401 ot-23 ksd-t5c066-000	PDF
SBT5401F Abstract: Transistor SBT5551F Contextual Info: SBT5401F Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F	Original	sbt5401f -160v sbt5551f ot-23f +2kst-2096-001 transistor	PDF
SBT5401 Abstract: SBT5551 Contextual Info: SBT5401 Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551	Original	sbt5401 -160v -150v sbt5551 +4ot-23 kst-2013-000 -50ma -10ma	PDF
SBT5401F Abstract: SBT5551F Contextual Info: SBT5401F Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F	Original	sbt5401f -160v -150v sbt5551f +4ot-23f kst-2096-000 -50ma -10ma	PDF
SBT5401F Abstract: SBT5551F SBT5401 Contextual Info: SBT5401F PNP Silicon Transistor Description PIN Connection • General purpose amplifier • High voltage application 3 Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F	Original	sbt5401f -160v sbt5551f ot-23f +2ksd-t5c091-000 sbt5401	PDF
SBT5401 Abstract: SBT5551 Transistor marking 0.5 Contextual Info: SBT5551 NPN Silicon Transistor PIN Connection Descriptions • General purpose amplifier • High voltage application 2 • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401	Original	sbt5551 sbt5401 ot-23 ksd-t5c066-000 +1transistor marking 0.5	PDF
Contextual Info: SBT5551F NPN Silicon Transistor Descriptions PIN Connection • General purpose am plifier • High volt age applicat ion 3 Features • high collect or breakdown volt age : VCBO = 180V, VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.)	Original	sbt5551f sbt5401f ot-23f ksd-t5c076-000	PDF
Contextual Info: SBT5401 PNP Silicon Transistor Description PIN Connection • General purpose am plifier • High volt age applicat ion Features • High collect or breakdown volt age : VCBO = - 160V, VCEO = - 160V • Low collect or sat urat ion volt age : VCE sat = - 0.5V( MAX.)	Original	sbt5401 sbt5551 ot-23 ksd-t5c079-000	PDF
S78DM12Q Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300 Contextual Info: 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power	Original	sn431 sun0550f/d o-220ab-3l o-220f-3l +14o-220f-4sl dip-14 dip-20 dip-18 s78dm12q sf20d400 s78dm12 ba5810 sn7905 sf5a400 transistor ae code pnp smd sf20a300 sf10a300 sf10d300	PDF