SBT5551F
Abstract: Transistor KST-2097-000 transistor 2097 SBT5401F
Contextual Info: SBT5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F
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SBT5551F
Abstract: SBT5401F SBT5401
Contextual Info: SBT5551F NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier • High voltage application 3 Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F
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sbt5551fsbt5401fot-23fksd-t5c076-000+1sbt5401
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SBT5401F
Abstract: Transistor SBT5551F
Contextual Info: SBT5401F Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F
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sbt5401f-160vsbt5551fot-23f+2kst-2096-001transistor
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Contextual Info: SBT5401F PNP Silicon Transistor Description PIN Connection • General purpose am plifier • High volt age applicat ion 3 Features • High collect or breakdown volt age : VCBO = - 160V, VCEO = - 160V • Low collect or sat urat ion volt age : VCE sat = - 0.5V( MAX.)
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sbt5401fsbt5551fksd-t5c091-000 |
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SBT5401F
Abstract: SBT5551F
Contextual Info: SBT5401F Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F
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sbt5401f-160v-150vsbt5551f+4ot-23fkst-2096-000-50ma-10ma
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SBT5401F
Abstract: SBT5551F SBT5401
Contextual Info: SBT5401F PNP Silicon Transistor Description PIN Connection • General purpose amplifier • High voltage application 3 Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F
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S78DM12Q
Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Contextual Info: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power
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sn431sun0550f/do-220ab-3lo-220f-3l+14o-220f-4sldip-14dip-20dip-18s78dm12qsf20d400s78dm12ba5810sn7905sf5a400transistor ae code pnp smdsf20a300sf10a300sf10d300
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Contextual Info: SBT5551F NPN Silicon Transistor Descriptions PIN Connection • General purpose am plifier • High volt age applicat ion 3 Features • high collect or breakdown volt age : VCBO = 180V, VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.)
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sbt5551fsbt5401fot-23fksd-t5c076-000 |
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