160 173 TRANSISTOR Search Results

VFD037B43A

Abstract: VFD075B43A VFD007B23A VFD022B43B VFD300 VFD015B43A VFD110B43A VFD015B53A VFD015B23A VFD150B43A
Contextual Info: v a n s - Ä hEUA D Dimensöe Eexternas Dimensöes Externas DELTA ELECTRONICS, INC Dimensöes u nidade: mm Modelo W W1 H H1 D Refrigerado por ventoinha VFD007B21A 118 4.65 108(4.25) 185(7.28) 173(6.81) 160(6.30) NO VFD007B23A 118(4.65) 145(5.71) NO VFD007B43A

transistor BF 509

Abstract: 479S bf diode transistor bf 271 transistors for uhf oscillators bf 107 a transistors bf UHF "AGC Amplifier" BF479 UHF pnp transistor
Contextual Info: CONSUMER TRANSISTORS IF amplifiers @ > o LU U o m and @ ÍD < < O E ai > < I- C3 Q_ @ CL □ a. BF 158 BF 160 BF 167 BF BF BF BF 173 251 271 274 BF 288 BF 454 BF 455 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN »TO-18 epoxy IF amplifier for T V IF amplifier for A M -F M radio

Transistors BF 324

Abstract: AM-FM TUNER BF252 UHF "AGC Amplifier" AGC Amplifiers radio diode SR 506 "AGC Amplifier" bf 245 fa 506 bf 233
Contextual Info: CONSUMER TRANSISTORS IF amplifiers @ o o m LU U ai > > and @ ÍD < < O < E I- C3 CL Q_ @ □ a . BF 158 NPN IF a m p lifie r fo r T V BF 160 NPN IF a m p lifie r fo r AM -FM radio 12 12 BF 167 NPN AG C-l F a m p lifie r fo r T V 30 BF 173 NPN IF vision am p-output stage

transistor 2SC930

Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
Contextual Info: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106

C67078-S1452-A2

Abstract: 160 173 TRANSISTOR
Contextual Info: BUZ 173 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 Ω TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1452-A2

Contextual Info: BUZ 173 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 Ω TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current

ericsson 10159

Abstract: PTF10159 470-860 mhz Power amplifier w
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power

PTF10027

Abstract: ericsson 10027 f 0952
Contextual Info: ERICSSON $ PTF 10027 12 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 12 watts minimum output power. Nitride surface passivation

VK200 19 4B INDUCTOR

Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

ericsson 10159

Abstract: PTF 10159 10159 atc 174 capacitor siemens 4700 35 G200 K1206 UT-85-25 470-860 mhz Power amplifier w UT85-25
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, LDMOS FET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 130 watts power output. Nitride surface passivation and

DL110

Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
Contextual Info: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

0.047 mf capacitor

Contextual Info: GOLDMOS PTF 10137 Field Effect Transistor 12 Watts, 1.0 GHz Description The PTF 10137 is a 12–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

UNELCO

Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

capacitor 0,1 mF 50V

Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram
Contextual Info: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization

ic 0941

Abstract: ericsson 10027 10027 mosfet SIEMENS B 58 371 R/Atmel 0947
Contextual Info: E R IC SSO N í PTE 10027* 12 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10027 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 18 watts minimum output power. Nitride surface passivation

transistor mj 4035

Abstract: tc 785 siemens SC160
Contextual Info: SIEMENS BUZ 173 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type BUZ173 Vbs -200 V b -3.6 A ^DS on Package Ordering Code 1.5 n TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

2SC1600

Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is

945 TRANSISTOR

Abstract: 700B AN1294 PD57018 PD57018S
Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF

945 TRANSISTOR

Abstract: 700B AN1294 PD57018 PD57018S
Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

945 TRANSISTOR

Abstract: 700B PD57018 PD57018S resistor 1 k ohm stmicroelectronics 402 transistor 650
Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

PD55003

Abstract: PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

j608

Abstract: 10R1 MRF6522-10R1
Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the

MRF6522-10

Abstract: MRF6522-10R1 10R1 Ni200 mosfet 4496
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the