15UM Search Results
15UM Price and Stock
Microchip Technology Inc AT28C256E-15UM/883-815EEPROM, 256 Kbit, 32K x 8bit, Parallel, PGA-30 - Boxed Product (Development Kits) (Alt: AT28C256E-15UM/883-815) |
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AT28C256E-15UM/883-815 | Box | 23 Weeks | 20 |
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AT28C256E-15UM/883-815 | Box | 23 Weeks |
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Microchip Technology Inc AT28C256-15UM/883- Boxed Product (Development Kits) (Alt: AT28C256-15UM/883) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AT28C256-15UM/883 | Box | 23 Weeks | 20 |
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AT28C256-15UM/883 | Box | 140 | 23 Weeks |
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AT28C256-15UM/883 | 25 Weeks | 20 |
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Microchip Technology Inc AT28C256-15UM/883-815EEPROM, 256 Kbit, 32K x 8bit, Parallel, PGA-30 - Boxed Product (Development Kits) (Alt: AT28C256-15UM/883-815) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AT28C256-15UM/883-815 | Box | 23 Weeks | 20 |
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AT28C256-15UM/883-815 | Box | 23 Weeks |
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AT28C256-15UM/883-815 |
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AT28C256-15UM/883-815 | 8,934 |
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Microchip Technology Inc AT28C256E-15UM/883- Boxed Product (Development Kits) (Alt: AT28C256E-15UM/883) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AT28C256E-15UM/883 | Box | 23 Weeks | 20 |
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AT28C256E-15UM/883 | Box | 23 Weeks |
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Bel Fuse VOF-150E-15-UM2AC-DC, 150 W, 15 VDC, SINGLE OUTPUT, U-FRAME, TERMINAL BLOCK - Boxed Product (Development Kits) (Alt: VOF-150E-15-UM2) |
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VOF-150E-15-UM2 | Box | 28 Weeks | 40 |
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VOF-150E-15-UM2 | 1 |
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VOF-150E-15-UM2 | 31 Weeks | 40 |
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15UM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Silicon Photo Transistor OPB0422 1. Structure 1.1 Chip Size : 0.415mm X 0.415mm 1.2 Chip thickness : 180 15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 138um X 138um - Base : 70um X 70um 2. Guaranteed Probed Electrical Characteristics |
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opb0422415mm138um500ua | |
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Contextual Info: Silicon Photo Transistor OPB0462 1. Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180 15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um 2. Guaranteed Probed Electrical Characteristics |
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opb0462135um500ua | |
EMP-21
Abstract: EMP216 PAE1
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emp2165330um3080um1250ma+2 | |
ca 3118
Abstract: EMP216
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emp2165330um3080um1250ma+1 | |
Crystal 32 MHz 12 pFContextual Info: PL610-6x 1.8V to 3.3V XO IC’s for 312.5kHz to 60MHz, with Standby FEATURES DESCRIPTION • Single IC to cover up to 60MHz output frequency. Direct oscillation operation Input Frequency: Fundamental crystal: o 10MHz to 60MHz Output Frequency: LVCMOS |
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pl610-6x60mhz10mhz40mhz+2 | |
marking xt 12
Abstract: MTC1
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25khz60mhz40mhzpl610-6x+2 | |
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Contextual Info: CY54/74FCT2652T ^ 0 CYPRESS Features • Function and pinout compatible with FCT and F logic • FCT-C speed at 5.4 ns max. Com’l FCT-A speed at 6»3 ns max. (Com’l) • 25Q output series resistors to reduce transmission line reflection noise • Reduced V oh (typically = 3.3V) |
OCR Scan |
cy54/74fct2652tcy74fct2652atpcp13/13a24-lead+4 | |
C102
Abstract: C103 NJU6678V NJU6678VA NJU6678VB NJU6678VCL S104 S105 S130 S131
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nju6678v104-common132-segmentsel68+9 | |
2005Z
Abstract: 2005.z XC8Y-110AL 2005 Z XC8Z-0001 XY2D-1005 XC8Z-0019 XC8Z-0010 XC8Z-0002 sn 0952
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iec61076-4-101ac500v20m20mv100ma104mdc100v+14 | |
JESD22-B111
Abstract: JESD22B111 IPC-SM-785 ALIVH PCB ALIVH IPC-SM785 AN-1412 1412 SMD NI
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an-1412jesd22-b111jesd22b111ipc-sm-785+5 | |
0.3mm pitch csp package
Abstract: 0.3mm pitch package bga 0.3mm pitch BGA jp smd code AN100926-26-JP AN-1112 micro pitch BGA ALIVH ic micro AN1112
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an-11120.3mm pitch csp package0.3mm pitch package bga0.3mm pitch bga+6 | |
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Contextual Info: K7P323674C K7P321874C 1Mx36 & 2Mx18 SRAM 36Mb Late Write SRAM Specification 119BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
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k7p323674ck7p321874c1mx362mx18+1 | |
AT28C256Contextual Info: AT28C256 Features • • • • • • • • • • • Fast Read Access T im e -1 5 0 ns Automatic Page W rite Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast W rite Cycle Times Page W rite Cycle Time: 3.0 ms o r 10 ms maximum |
OCR Scan |
at28c256 | |
cs 2648
Abstract: NJU6679A c 3852 C127 NJU6679 NJU6679B NJU6679CJ S131
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nju6679128-common132-segmentsel68+7 | |
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5962-88525 15 ZX
Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC AT28C256 CERAMIC LEADLESS CHIP CARRIER AT28C256-15 AT28C256-20 AT28C256-25 AT28C256-35 AT28C256F
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64-byte0006j5962-88525 15 zx64 ceramic leadless chip carrier lcc+7 | |
12V/-12V voltage regulator
Abstract: variable frequency drive circuit diagram C102 C103 NJU6678V NJU6678VA NJU6678VB NJU6678VCL S104 S105
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nju6678v104-common132-segmentsel68+9 | |
W9205Contextual Info: SEOUL SEMICONDUCTOR Z-POWER LED Series Technical Datasheet for X9X050 Z-Power series is designed for high current operation and high flux output applications. Furthermore, its thermal Features • Super high Flux output and high Luminance management characteristic is better than other LED |
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x9x050w9205 | |
28C010
Abstract: AT28C010 AT28C010-12 AT28C010-15 AT28C010-20 AT28C010-25 15DM883 lm883
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at28c010128-bytes128-bytedm/883+11 | |
atmel 811
Abstract: AT28C010 Mil
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128-bytes128-byteat28c0100010c+3 | |
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Contextual Info: NJU6678V 104-common x 132-segment BIT MAP LCD DRIVER GENERAL DESCRIPTION The NJU6678V is a 104-common x 132-segment bit map LCD driver to display graphics or characters. It contains 21,120 bits display data RAM, microprocessor interface circuits, instruction decoder, and common and segment drivers. |
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nju6678v104-common132-segmentsel68 | |
EMP107
Abstract: 0V28-5
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emp10724dbm-41dbc1130um+2 | |
SSD1355
Abstract: transistor B324 B324 transistor datasheet lj96 b322 tfa 1103 SENSOR SB19 SSD1355U6R1 sc107 transistor IC 744
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ssd13552002/95/ecsj/t11364-2006transistor b324+8 | |
EMP103Contextual Info: EMP103 6.4 – 8.0 GHz Power Amplifier MMIC ISSUED DATE: 07-12-04 FEATURES • • • • 6.4 – 8.0 GHz Operating Frequency Range 32.5dBm Output Power at 1dB Compression 15.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 22dBm APPLICATIONS • |
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emp103-40dbc22dbm2200um+3 | |
Uniroyal OptoelectronicsContextual Info: POWERGa i N Technology UNPRX470-X0X HIGH PERFORMANCE BLUE LED DIE Maximum Ratings @ TA = 25°° C DC Forward Current 30mA Peak Forward Current (<10ms,1/10 Duty cycle) Led Junction Temp Forward Voltage Reverse Voltage Operating Temperature Range Storage Temperature Range |
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unprx470-x0x100mauniroyal optoelectronics | |