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    TE Connectivity

    TE Connectivity TRAB82138UM

    OMNI PH 821-896MHZ BK 150W MB8UM
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    138UM Datasheets Context Search

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    OPB0422

    Abstract: 839 transistor transistor 835
    Contextual Info: Silicon Photo Transistor OPB0422 1. Structure 1.1 Chip Size : 0.415mm X 0.415mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 138um X 138um - Base : 70um X 70um Ta=25℃


    Original     		OPB0422 415mm 415mm 138um 138um 500uA OPB0422 839 transistor transistor 835 PDF

    Contextual Info: Silicon Photo Transistor OPB0422 1. Structure 1.1 Chip Size : 0.415mm X 0.415mm 1.2 Chip thickness : 180 15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 138um X 138um - Base : 70um X 70um 2. Guaranteed Probed Electrical Characteristics


    Original     		OPB0422 415mm 415mm 138um 138um 500uA PDF