15A TRANSISTOR Search Results

FSF9250R4

Abstract: 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 04 /Subject (15A, 200V, 0.290 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 15A, 200V,

D15P05

Abstract: RFP15P05 RFD15P05 RFD15P05SM TB334 d15p0 rfd15 D15p05 harris
Contextual Info: [ /Title RFD15 P05, RFD15 P05SM, RFP15 P05 /Subject (15A, 50V, 0.150 RFD15P05, RFD15P05SM, RFP15P05 Semiconductor -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A, -50V These are P-Channel power MOSFETs manufactured using

Contextual Info: ISL9R1560G2_F085 15A, 600V Stealth Rectifier Features 15A, 600V Stealth Rectifier • High Speed Switching trr=26ns(Typ. @ IF=15A ) The ISL9R1560G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

2SC6141

Abstract: a1288 2SA222 2SA2221 2SC614 2SA22 A1288-1 230v to 5v dc circuit diagrams
Contextual Info: 2SA2221/2SC6141 Ordering number : ENA1288 SANYO Semiconductors DATA SHEET 2SA2221/2SC6141 Applications • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications 230V / 15A, AF100W output applications.

Contextual Info: RURP1560_F085 15A, 600V Ultrafast Rectifier Features 15A, 600V Ultrafast Rectifier • High Speed Switching trr=52ns(Typ. @ IF=15A ) The RURP1560_F085 is an ultrafast diode with soft recovery characteristics(trr < 70ns). It has a low forward voltage drop and is of planar, silicon nitride assivated,

Power Transistor 2N3771

Abstract: 2N3771 2N3771 power transistor 2N3771 inchange
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3771 DESCRIPTION •Excellent Safe Operating Area ·High DC Current Gain-hFE=15 Min @IC = 15A ·Low Saturation Voltage: VCE(sat)= 2.0V(Max)@ IC = 15A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and

AN7254

Abstract: AN7260 RFP15N08L TB334 Logic Level N-Channel Power MOSFET
Contextual Info: RFP15N08L Data Sheet January 2002 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET Features • 15A, 80V The RFP15N08L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5 volt driving sources in applications

BFR15A

Contextual Info: SIEM EN S NPN Silicon RF Transistor BFR 15A • For broadband amplifiers up to 1 G H z at collector currents up to 20 mA. E S D : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR15A B F R 15A Q62702-F460

RFM15

Abstract: rfm15n15
Contextual Info: J W S RFM15N12, RFM15N15, RFP15N12, RFP15N15 Semiconductor October 1998 Data Sheet File Number 1443.1 Features 15A, 120V and 150V, 0.150 Ohm, N-Channel Power MOSFETs • 15A, 120V and 150V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such

Contextual Info: IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications • Medium Power Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features

Contextual Info: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: STEALTHTM II Rectifier FFPF15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 35ns @ IF = 15A The FFPF15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

F15S60S

Abstract: FFP15S60S FFP15S60STU
Contextual Info: STEALTH II Rectifier FFP15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 35ns @ IF = 15A The FFP15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

5N05

Contextual Info: RFP15N05L, RFP15N06L Data Sheet July 1999 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs [ /Title RFP1 5N05L , RFP15 N06L /Subject (15A, 50V and 60V, 0.140 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation,

Contextual Info: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

IRF9540

Abstract: IRF9542 to220ab package TA17521 IRF9541 IRF9542 IRF9543 RF1S9540 RF1S9540SM
Contextual Info: IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM Semiconductor -15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -15A and -19A, -80V and -100V These are P-Channel enhancement mode silicon gate

lsd 3222 -20

Contextual Info: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 15A, -200V, rDS 0 N = 0.290£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: Stealth 2 Rectifier FFH15S60S tm Features 15A, 600V Stealth 2 Rectifier • High Speed Switching, rrt < 35ns @ IF = 15A • High Reverse Voltage and High Reliability The FFH15S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial

F15P06

Abstract: RFD15P06 RFD15P06SM RFD15P06SM9A RFP15P06 TB334
Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet January 2002 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs Features • 15A, 60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives

ECONOPACK

Abstract: 100C EMP15P12D schematic e.m.p rev 1.5 driver motherboard
Contextual Info: Bulletin I27181 rev 1.5 08/05 EMP15P12D PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 15A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.7Vtyp @ 15A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology

JESD97

Abstract: STS15N4LLF3
Contextual Info: STS15N4LLF3 N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LLF3 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced SO-8 Description

vogt

Abstract: fi324 Resistor R1206 vogt -sumida 200v 3A schottky 380v bcb56b C0805 100nf capacitor kmg KMG 200V
Contextual Info: Ref. Q.ty CONI 1 Variant Clamp, WECO, 2 pole, horizontal, 1.5mm2, 380V, 15A CON2 1 Clamp, WECO, 3 pole, horizontal, 1.5mm2, 380V, 15A C1 1 22pF Electrolytic capacitor, Nippon Chemi-Con, KMG 400V, 20% C2 1 10pF Electrolytic capacitor, Nippon Chemi-Con, KMG 400V, 20%

D15P05

Abstract: RFP15P05 RFD15P05 RFD15P05SM RFD15P05SM9A TB334
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 50V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

2SK3365

Abstract: PF405
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3365 TO-252 MAX. VGS = 4 V, ID = 15A Low Ciss: Ciss = 1300 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.8 0.50-0.7 3.80 RDS(on)3 = 29m Unit: mm +0.1 2.30-0.1 +0.15 5.55-0.15 MAX. (VGS = 4.5 V, ID = 15A)