15A TRANSISTOR Search Results

ceb65

Abstract: 15d60
Contextual Info: CEP655N/CEB655N CEI655N/CEF655N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP655N 150V 0.153Ω 15A 10V CEB655N 150V 0.153Ω 15A 10V CEI655N 150V 0.153Ω 15A CEF655N 150V 0.153Ω 15A 10V d 10V D Super high dense cell design for extremely low RDS(ON).

FSF9250R4

Abstract: 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 04 /Subject (15A, 200V, 0.290 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 15A, 200V,

D15P05

Abstract: RFP15P05 RFD15P05 RFD15P05SM TB334 d15p0 rfd15 D15p05 harris
Contextual Info: [ /Title RFD15 P05, RFD15 P05SM, RFP15 P05 /Subject (15A, 50V, 0.150 RFD15P05, RFD15P05SM, RFP15P05 Semiconductor -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A, -50V These are P-Channel power MOSFETs manufactured using

Contextual Info: ISL9R1560G2_F085 15A, 600V Ultrafast Rectifier Features 15A, 600V Ultrafast Rectifier • High Speed Switching trr=26ns(Typ. @ IF=15A ) The ISL9R1560G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

Contextual Info: ISL9R1560G2_F085 15A, 600V Stealth Rectifier Features 15A, 600V Stealth Rectifier • High Speed Switching trr=26ns(Typ. @ IF=15A ) The ISL9R1560G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse

2SC6141

Abstract: a1288 2SA222 2SA2221 2SC614 2SA22 A1288-1 230v to 5v dc circuit diagrams
Contextual Info: 2SA2221/2SC6141 Ordering number : ENA1288 SANYO Semiconductors DATA SHEET 2SA2221/2SC6141 Applications • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications 230V / 15A, AF100W output applications.

Contextual Info: RURP1560_F085 15A, 600V Ultrafast Rectifier Features 15A, 600V Ultrafast Rectifier • High Speed Switching trr=52ns(Typ. @ IF=15A ) The RURP1560_F085 is an ultrafast diode with soft recovery characteristics(trr < 70ns). It has a low forward voltage drop and is of planar, silicon nitride assivated,

Contextual Info: RURP1560_F085 15A, 600V Ultrafast Rectifier Features 15A, 600V Ultrafast Rectifier • High Speed Switching trr=52ns(Typ. @ IF=15A ) The RURP1560_F085 is an ultrafast diode with soft recovery characteristics(trr < 70ns). It has a low forward voltage drop and is of planar, silicon nitride assivated,

Contextual Info: RHRG1560CC_F085 15A, 600V Hyperfast Rectifier Features Max Ratings 600V, 15A • High Speed Switching ( trr=26ns(Typ.) @ IF=15A ) The RHRG1560CC_F085 is an Hyperfast diode with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diode and is of silicon nitride

Contextual Info: RHRG1560_F085 15A, 600V Hyperfast Rectifier Features Max Ratings 600V, 15A • High Speed Switching ( trr=26ns(Typ.) @ IF=15A ) The RHRG1560_F085 is an Hyperfast diode with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diode and is of silicon nitride

Contextual Info: SGTN15C120HW Insulated Gate Bipolar Transistor, IGBT 1200V, 15A High Speed Field Stop IGBT Features • Low gate charge  Field Sotp Technology  Low saturation voltage: VCE sat = 1.8V (@ IC = 15A, TC = 25C)  RoHS compliant product Applications

AN7254

Abstract: AN7260 RFP15N05L RFP15N06L TB334
Contextual Info: RFP15N05L Data Sheet January 2004 15A, 50V, 0.140 Ohm, Logic Level NChannel Power MOSFETs Features • 15A, 50V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Power Transistor 2N3771

Abstract: 2N3771 2N3771 power transistor 2N3771 inchange
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3771 DESCRIPTION •Excellent Safe Operating Area ·High DC Current Gain-hFE=15 Min @IC = 15A ·Low Saturation Voltage: VCE(sat)= 2.0V(Max)@ IC = 15A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and

AN7254

Abstract: AN7260 RFP15N08L TB334 Logic Level N-Channel Power MOSFET
Contextual Info: RFP15N08L Data Sheet January 2002 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET Features • 15A, 80V The RFP15N08L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5 volt driving sources in applications

BFR15A

Contextual Info: SIEM EN S NPN Silicon RF Transistor BFR 15A • For broadband amplifiers up to 1 G H z at collector currents up to 20 mA. E S D : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR15A B F R 15A Q62702-F460

TA0522

Abstract: RFP15N06L RFP15N05L RFP15N05 AN7254 AN7260 TB334 RFP15N
Contextual Info: RFP15N05L, RFP15N06L Data Sheet January 2002 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs Features • 15A, 50V and 60V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

MP6750

Abstract: toshiba mp6750 toshiba motor
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MP6750 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35µs Max. (IC = 15A) trr = 0.15µs (Max.) (IC = 15A)

RFM15

Abstract: rfm15n15
Contextual Info: J W S RFM15N12, RFM15N15, RFP15N12, RFP15N15 Semiconductor October 1998 Data Sheet File Number 1443.1 Features 15A, 120V and 150V, 0.150 Ohm, N-Channel Power MOSFETs • 15A, 120V and 150V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such

Contextual Info: IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications • Medium Power Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features

AN7254

Abstract: AN7260 RFP15N08L TB334
Contextual Info: RFP15N08L Data Sheet June 1999 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET File Number 2840.1 Features • 15A, 80V The RFP15N08L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5 volt driving sources in applications

IRG8CH20K10F

Contextual Info: IRG8CH20K10F INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.7V @ IC= 15A E n-channel Applications • Industrial Motor Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter

D15P05

Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs [ /Title RFD1 5P05, RFD15 P05S M, RFP15 P05 /Subject (15A, 50V, 0.150 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power

Contextual Info: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: STEALTHTM II Rectifier FFPF15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 35ns @ IF = 15A The FFPF15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.