150V MOSFET Search Results

ta9192

Abstract: TA919 AN7254 AN7260 RFL4N12 RFL4N15
Contextual Info: [ /Title RFL4N 12, RFL4N1 5 /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark RFL4N12, RFL4N15 Semiconductor 4A, 120V and 150V, 0.400 Ohm,

AN7254

Abstract: AN7260 RFP2N12 RFP2N15 TB334
Contextual Info: [ /Title RFP2N 12, RFP2N1 5 /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark RFP2N12, RFP2N15 Semiconductor 2A, 120V and 150V, 1.750 Ohm,

Contextual Info: AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary The AOT2500L/AOB2500L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 150V 152A efficient high frequency switching performance. Both

Contextual Info: AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary The AOT2500L/AOB2500L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 150V 152A efficient high frequency switching performance. Both

IRF5NJ6215

Contextual Info: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

AN7254

Abstract: AN7260 RFL1N12L RFL1N15L
Contextual Info: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,

Mosfet

Abstract: SSF1504D
Contextual Info: SSF1504D 150V N-Channel MOSFET Main Product Characteristics VDSS 150V RDS on 0.3Ω(typ) ID 6A DPAK Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and

P30NS15LFP

Abstract: P30NS15L P30NS JESD97 STP30NS15LFP
Contextual Info: STP30NS15LFP N-channel 150V - 0.085Ω - 10A - TO-220FP MESH OVERLAY II Power MOSFET General features Type VDSS RDS on ID STP30NS15LFP 150V <0.1Ω 10A • Extremely high dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested

IRF9640

Abstract: RF1S9640 TA17522 IRF9641 IRF9642 IRF9643 RF1S9640SM TB334 TO-220aB 11A
Contextual Info: IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM Semiconductor -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon-gate

Contextual Info: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF5NJ6215

Abstract: 75vds p mosfet
Contextual Info: PD - 94284 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Mosfet

Abstract: SSF1502D
Contextual Info: SSF1502D 150V N-Channel MOSFET Main Product Characteristics VDSS 150V RDS on 0.15Ω(typ) ID 8A DPAK Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF1526
Contextual Info: SSF1526 150V N-Channel MOSFET Main Product Characteristics VDSS 150V RDS on 22mohm(typ.) ID 65A TO - 220 Features and Benefits   Marking and Pin Assignment Schematic Diagram Advanced trench MOSFET process technology Special designed for PWM, load switching and

P30NS15LFP

Abstract: P30NS
Contextual Info: STP30NS15LFP N-channel 150V - 0.085Ω - 10A - TO-220FP MESH OVERLAY II Power MOSFET General features Type VDSS RDS on ID STP30NS15LFP 150V <0.1Ω 10A • Extremely high dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested

Mosfet

Abstract: SSF1502G5
Contextual Info: SSF1502G5 150V N-Channel MOSFET Main Product Characteristics VDSS 150V RDS on 0.14Ω(typ) ID 6A SOT223 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and

Contextual Info: IRF220, IRF221, IRF222, IRF223 Semiconductor 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 4.0A and 5.0A, 150V and 200V • Majority Carrier Device These are N-Channel enhancement mode silicon gate

b40nf10

Abstract: JESD97 STB40NS15 STB40NS15T4 b40n
Contextual Info: STB40NS15 N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STB40NS15 150V <0.052Ω 40A • Exceptional dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances 3 1 D2PAK Description

FDB2570

Abstract: FDP2570
Contextual Info: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and

RFL1N15

Abstract: AN7254 AN7260 RFL1N12 TB334
Contextual Info: RFL1N12, RFL1N15 Semiconductor 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

B40NF

Abstract: JESD97 STB40NS15 STB40NS15T4
Contextual Info: STB40NS15 N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY Power MOSFET Features Type VDSS STB40NS15 150V RDS on (max) <0.052Ω • Exceptional dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ID 40A 3 1 D2PAK Applications

Contextual Info: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

CBVK741B019

Abstract: EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions
Contextual Info: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and

2539a

Contextual Info: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and